SPANSION AM49LV128BMH11NS

Am49LV128BM
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 31022 Revision A
Amendment 6 Issue Date June 17, 2004
THIS PAGE LEFT INTENTIONALLY BLANK.
SUPPLEMENT
Am49LV128BM
Stacked Multi-Chip Package (MCP)
128 Megabit (8 M x 16-Bit) MirrorBit™ Uniform Sector Flash Memory and
32 Mbit (2 M x 16-Bit) pseudo-static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
„ Single power supply operation
— 3 volt read, erase, and program operations
„ Manufactured on 0.23 µm MirrorBit process
technology
„ SecSi™ (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked by the customer
„ Flexible sector architecture
— Two hundred fifty-six 32 Kword sectors
„ Compatibility with JEDEC standards
— Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write
protection
„ Minimum 100,000 erase cycle guarantee per sector
„ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
„ High performance
— As fast as 105 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical write buffer word programming time: 16word write buffer reduces overall programming time
for multiple-word updates
— 4-word page read buffer
— 16-word write buffer
„ Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
„ Package option
— 64-ball FBGA
SOFTWARE & HARDWARE FEATURES
„ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
„ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: VID-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
PSRAM FEATURES
„ Asynchronous SRAM Interface
„ Fast Access Time
— tCE = tAA = 65 ns max
„ Low Voltage Operating Condition
— VDD = 2.7 to + 3.1 V
„ Byte Control by LB# and UB#
Publication Number: 31022_00
Amendment:6
Rev: A
GENERAL DESCRIPTION
The 128 Mbit MirrorBit device is a 128 Mbit, 3.0 volt
single power supply flash memory devices organized
as 8,388,608 words. The device has a 16-bit wide data
bus. The device can be programmed either in the host
system or in standard EPROM programmers.
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
An access time of 105 or 110 ns is available. Each device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a
given sector group to read or program any other sector
group and then complete the erase operation. The
Program Suspend/Program Resume feature enables the host system to pause a program operation in
a given sector group to read any other sector group
and then complete the program operation.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V CC input, a high-voltage accelerated program
(WP#/ACC) input provides shorter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection measures include a low
V CC detector that automatically inhibits write opera-
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The SecSi™ (Secured Silicon) Sector provides a
128-word area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur.
The Write Protect (WP#/ACC) feature protects the
last sector by asserting a logic low on the WP# pin.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
RELATED DOCUMENTS
For a comprehensive information on MirrorBit products, including migration information, data sheets, application notes, and software drivers, please see
www.amd.com → Flash Memory → Product Information→MirrorBit→Flash Information→Technical Documentation. The following is a partial list of documents
closely related to this product:
2
MirrorBit™ Flash Memory Write Buffer Programming
and Page Buffer Read
Implementing a Common Layout for AMD MirrorBit
and Intel StrataFlash Memory Devices
Migrating from Single-byte to Three-byte Device IDs
Am49LV128BM
June 17, 2004
TABLE OF CONTENTS
Continuity of Specifications . . . . . . . . . . . 3
Continuity of Ordering Part Numbers . . . . . 3
For More Information . . . . . . . . . . . . . . . . 3
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . .
General Description . . . . . . . . . . . . . . . . . . . . . . 2
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .4
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . .4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5
Special Package Handling Instructions . . . . 5
Look Ahead pinout . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 10
Device Bus Operations . . . . . . . . . . . . . . . . . 10
Requirements for Reading Array Data . . . 10
Writing Commands/Command Sequences 11
Standby Mode ........................................................................ 11
Automatic Sleep Mode . . . . . . . . . . . . . . 11
RESET#: Hardware Reset Pin . . . . . . . . . 12
Output Disable Mode . . . . . . . . . . . . . . . 12
Sector Address Table . . . . . . . . . . . . . . . . . . 12
SecSi (Secured Silicon) Sector Flash Memory
Region . . . . . . . . . . . . . . . . . . . . . . . . . 17
SecSi Sector Contents . . . . . . . . . . . . . . . . 18
Sector Group Protection and Unprotection............................. 19
Sector Group Protection/Unprotection
Address Table . . . . . . . . . . . . . . . . . . . . . . 19
Write Protect (WP#) ................................................................ 20
Temporary Sector Group Unprotect . . . . . 20
Temporary Sector Group Unprotect Operation 20
In-System Sector Group Protect/Unprotect
Algorithms . . . . . . . . . . . . . . . . . . . . . . . . 21
Hardware Data Protection . . . . . . . . . . . 22
Common Flash Memory Interface (CFI) . . . . . . . . 22
Command Definitions . . . . . . . . . . . . . . . . . . . . . . .24
Reading Array Data . . . . . . . . . . . . . . . . 24
Reset Command . . . . . . . . . . . . . . . . . . 25
Autoselect Command Sequence . . . . . . . 25
Enter SecSi Sector/Exit SecSi Sector
Command Sequence . . . . . . . . . . . . . . . 25
Word Program Command Sequence . . . . . 25
Write Buffer Programming Operation . . . . . . . 28
Program Operation . . . . . . . . . . . . . . . . . . . 29
Program Suspend/Program Resume
Command Sequence . . . . . . . . . . . . . . . 29
Program Suspend/Program Resume . . . . . . . 30
Chip Erase Command Sequence . . . . . . . 30
Sector Erase Command Sequence . . . . . . 30
Erase Operation . . . . . . . . . . . . . . . . . . . . . 31
Erase Suspend/Erase Resume Commands 31
Command Definitions .............................................................. 32
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 33
DQ7: Data# Polling . . . . . . . . . . . . . . . . 33
Data# Polling Algorithm . . . . . . . . . . . . . . . . 33
DQ6: Toggle Bit I. . . . . . . . . . . . . . . . . . 33
June 17, 2004
Toggle Bit Algorithm . . . . . . . . . . . . . . . . . . 34
DQ2: Toggle Bit II . . . . . . . . .
Reading Toggle Bits DQ6/DQ2
DQ5: Exceeded Timing Limits .
DQ3: Sector Erase Timer . . . .
DQ1: Write-to-Buffer Abort . . .
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34
35
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35
35
Write Operation Status . . . . . . . . . . . . . . . . 36
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 37
Maximum Negative Overshoot Waveform . .
Maximum Positive Overshoot Waveform . . .
37
37
Flash DC Characteristics . . . . . . . . . . . . . . . . . . . . 38
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Test Setup . . . . . . . . . . . . . . . . . . . . . . . . 39
Test Specifications . . . . . . . . . . . . . . . . . . . 39
Key to Switching Waveforms. . . . . . . . . . . . . . . . 39
Input Waveforms and Measurement
Levels . . . . . . . . . . . . . . . . . . . . . . . . . . .
39
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40
VCC Power-up ........................................................................ 40
VCC Power-up Diagram . . . . . . . . . . . . . . . . 40
Read Operations Timings . . . . . . . . . . . . . . . 41
Page Read Timings . . . . . . . . . . . . . . . . . . . 42
Hardware Reset (RESET#) .................................................... 43
Reset Timings . . . . . . . . . . . . . . . . . . . . . .
43
Erase and Program Operations .............................................. 44
Program Operation Timings . . . . . . . . . .
Accelerated Program Timing Diagram. . . .
Chip/Sector Erase Operation Timings . . .
Data# Polling Timings (During Embedded
Algorithms) . . . . . . . . . . . . . . . . . . . . .
Toggle Bit Timings (During Embedded
Algorithms). . . . . . . . . . . . . . . . . . . . . .
DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . .
. . . 45
. . 45
. . . 46
. . . 47
. . 48
. . . 48
Temporary Sector Unprotect .................................................. 49
Temporary Sector Group Unprotect
Timing Diagram . . . . . . . . . . . . . . . . . . . . . 49
Sector Group Protect and Unprotect
Timing Diagram . . . . . . . . . . . . . . . . . . . . . 50
Alternate CE# Controlled Erase and Program
Operations .............................................................................. 51
Alternate CE# Controlled Write (Erase/Program)
Operation Timings 5. . . . . . . . . . . . . . . . . . . . 2
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 52
Erase And Programming Performance. . . . . . . . . 53
BGA Package Capacitance. . . . . . . . . . . . . . . . . . 53
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Function Truth Table . . . . . . . . . . . . . . . . . . . . . . . 55
Power Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Recommended Operating Conditions . . . . . . . . . 57
pSRAM DC Characteristics . . . . . . . . . . . . . . . . . . 58
pSRAM AC Characteristics . . . . . . . . . . . . . . . . . . 59
Read Operation . . . . . . . . . . . . . . . . . . . 59
Write Operation . . . . . . . . . . . . . . . . . . 60
Power Down Parameters . . . . . . . . . . . . 61
Other Timing Parameters . . . . . . . . . . . . 61
AC Test Conditions . . . . . . . . . . . . . . . . . 62
AC Measurement Output Load Circuit . . . . . .
62
Timing Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . 63
Am49LV128BM
3
Read TIming #1 (Basic Timing) . . . . . . . . . . 63
Read Timing #2 (OE# and Address Access) . . 64
Read Timing #3 (LB#/UB# Byte Access) . . . . 65
Read Timing #4 (Page Access after CE1#
Control Access) . . . . . . . . . . . . . . . . . . . . . 65
Read Timing #5 (Random and Page Address
Access) . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Write Timing #1 (Basic Timing) . . . . . . . . . . 67
Write Timing #2 (WE# Control) . . . . . . . . . . 67
Write Timing #3-1 (WE#/LB#/UB# Byte Write
Control) . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Write Timing #3-2 (WE#/LB#/UB# Byte Write
Control) . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Write Timing #3-3 (WE#/LB#/UB# Byte Write
Control) . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Write Timing #3-4 (WE#/LB#/UB# Byte Write
Control) . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Read/Write Timing #1-1 (CE1# Control) . . . 71
Read/Write Timing #1-2 (CE1#/WE#/OE#
Control) . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Read/Write Timing #2 (OE#, WE# Control) . 72
Read/Write Timing #3 (OE#, WE#, LB#, UB#
Control) . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Power-up Timing #1 . . . . . . . . . . . . . . . . . 73
Power-up Timing #2 . . . . . . . . . . . . . . . . . 73
Power-down Entry and Exit Timing. . . . . . . . 74
Standby Entry Timing after Read or Write . . . 74
AM49LV128BM MCP With Second PSRAM
Supplier. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
pSRAM Block Diagram . . . . . . . . . . . . . . . . . . . . . 76
Absolute Maximum Ratings (Note 1) . . . . . . . . . .76
4
Operating Characteristics (Over Specified
Temperature Range) . . . . . . . . . . . . . . . . . . . . . . . 77
Output Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . 78
Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Timing of Read Cycle (CE# = OE# = VIL,
WE# = VIH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Timing Waveform of Read Cycle (WE#=VIH) . . . 81
Timing Waveform of Page Mode Read Cycle
(WE# = VIH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Timing Waveform of Write Cycle
(WE# Control). . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Timing Waveform of Write Cycle
(CE# Control) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Timing Waveform for Successive WE# Write
Cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Timing Waveform of Page Mode Write Cycle. . 86
Reduced Memory Size (RMS) . . . . . . . . . 86
Partial Array Refresh (PAR) . . . . . . . . . . . 86
Deep Sleep Mode . . . . . . . . . . . . . . . . . . 87
Variable Address Register . . . . . . . . . . . . . . . . . . 88
Variable Address Register (VAR) Update
Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Deep Sleep Mode - Entry/Exit Timings . . . . . . . . 90
Address Patterns for PAR (A3 = 0, A4 = 1) . . . . . . 91
Address Patterns for RMS (A3 = 1, A4 = 1) . . . . . 92
Low Power ICC Characteristics for PSRAM . . . . 93
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 94
TLD064–64-Ball Fine-pitch Ball Grid Array ............................. 94
Revision Summary. . . . . . . . . . . . . . . . . . . . . . . . . 95
Am49LV128BM
June 17, 2004
PRODUCT SELECTOR GUIDE
Part Number
Am49LV128BM
Speed/
Voltage Option
Flash
Full Voltage Range
VCC = 2.7–3.1 V
pSRAM
15
11
15, 11
Max. Access Time (ns)
105
110
65
Max. CE# Access Time (ns)
105
110
65
Max. Page access time (tPACC)
25
30
20
Max. OE# Access Time (ns)
25
30
20
Notes:
1. See “AC Characteristics” for full specifications.
MCP BLOCK DIAGRAM
A22 to A0
RY/BY#
A22 to A0
WP#/ACC
RESET#
CE#f
128 M Bit
Flash Memory
DQ15 to DQ0
DQ15 to DQ0
VCCs/VCCQ
VSS/VSSQ
A0
toto
A19
A20
A0
LB#ps
UB#ps
WE#
OE#
CE1#ps
CE2ps
June 17, 2004
32 M Bit
pseudo
Static RAM
DQ15 to DQ0
Am49LV128BM
5
CONNECTION DIAGRAMS
64-Ball Fine-Pitch (FBGA)
Top View, Balls Facing Down
A1
A10
NC
NC
B5
B6
NC
NC
C3
C4
C5
C6
C7
C8
A7
LB#
WP/ACC#
WE#
A8
A11
D2
D3
D4
D5
D6
D7
D8
D9
A3
A6
UB#
RESET#
CE2ps
A19
A12
A15
E2
E3
E4
E5
E6
E7
E8
E9
A2
A5
A18
RY/BY#
A20
A9
A13
A21
F2
F3
F4
F7
F8
F9
A1
A4
A17
A10
A14
A22
G2
G3
G4
G7
G8
G9
DQ6
NC
A16
A0
VSS
DQ1
H2
H3
H4
CE#f
OE#
H5
DQ9
DQ3
DQ4
H7
H8
H9
DQ13
DQ15
VCCf
J2
J3
J4
J5
J6
J7
J8
J9
CE#1ps
DQ0
DQ10
VCCf
VCCps
DQ12
DQ7
VSS
K3
K4
K5
K6
K7
K8
DQ8
DQ2
DQ11
NC
DQ5
DQ14
L5
L6
NC
NC
M1
M10
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP and BGA). The package
6
H6
and/or data integrity may be compromised if the
package body is exposed to temperatures above
150°C for prolonged periods of time.
Am49LV128BM
June 17, 2004
LOOK AHEAD PINOUT
A1
A2
A9
A10
NC
NC
NC
NC
B1
B2
B9
B10
NC
NC
NC
NC
C5
C2
C3
C4
ADV#
VSSds
CLK
D2
D3
D4
WP#
A7
LB#
E2
E3
E4
E5
A3
A6
UB#s
F2
F3
A2
C6
C8
C7
C9
CE#f2 VCCds RST#ds CLK#ds RY/BY#ds
D7
D8
D9
A8
A11
CE#1ds
E6
E7
E8
E9
RST#f
CE2s1
A19
A12
A15
F4
F5
F6
F7
F8
F9
A5
A18
RY/BY#
A20
A9
A14
A22
G2
G3
G4
G5
G6
G7
G8
G9
A0
VSS
DQ1
VCCf
VCCps
DQ6
NC
A16
H2
H3
H4
H5
H6
H7
H8
H9
CE#f1
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
NC
J2
J3
J4
J5
J6
J7
J8
J9
CE#1ps
DQ0
DQ10
VCCf
VCCps
DQ12
DQ7
VSS
K2
K3
K4
K5
K6
K7
K8
K9
CE#1ps
DQ8
DQ2
DQ11
NC
DQ5
L2
L3
L4
L5
L6
L7
CE#1ps
DQ8
DQ2
DQ11
NC
DQ5
M2
M3
M4
M5
M6
M7
CE#1ps
DQ8
DQ2
DQ11
NC
DQ5
D5
D6
WP/ACC WE#
Pseudo
SRAM Only
Flash Only
Shared
DQ14 CE#1ps
L8
L9
DQ14 CE#1ps
M8
M9
DQ14 CE#1ps
N1
N2
N9
N10
NC
NC
NC
NC
P1
P2
P9
P10
NC
NC
NC
NC
In order to provide customers with a migration path to
higher densities, as well as the option to stack more
die in a package, FASL has prepared a standard pinout that supports:
„ NOR Flash and SRAM densities up to 4 Gigabits
„ NOR Flash and pSRAM densities up to 4 Gigabits
„ NOR Flash and pSRAM and DATA STORAGE densities up
to 4 Gigabits.
The signal locations of the resultant MCP device are
shown above. Note that for different densities, the ac-
June 17, 2004
tual package outline may vary. However, any pinout in
any MCP will be a subset of the pinout above.
In some cases, there may be outrigger balls in locations outside the grid shown above. In such cases, the
user is recommended to treat these as RFU’s, and not
connect them to any other signal.
In case of any further inquiries about the above lookahead pinout, please refer to the application note on
this subject, or contact the appropriate AMD or Fujitsu
sales office.
Am49LV128BM
7
PIN DESCRIPTION
LOGIC SYMBOL
A22–A21
= 2 Address inputs (Flash)
A20–A0
= 21 Address inputs (Flash and pSRAM)
23
DQ14–DQ0 = 15 Data inputs/outputs
DQ15
= DQ15 (Data input/output)
CE#f
= Chip Enable input (Flash)
16
A20–A0
CE1#ps
DQ15–DQ0
CE2ps
OE#
CE1#ps, CE2ps=Chip Enable (pSRAM)
WE#
OE#
= Output Enable input (Flash)
WE#
= Write Enable input (Flash)
WP#/ACC
= Hardware Write Protect input/Programming Acceleration input (Flash)
WP#/ACC
RESET#f
= Hardware Reset Pin input (Flash)
VCCf
= Flash 3.0 volt-only single power supply (see Product Selector Guide for
speed options and voltage
supply tolerances)
VCCps
= pSRAM Power Supply
VSS
= Device Ground
NC
= Pin Not Connected Internally
UB#s
= Upper Byte Control (pSRAM)
LB#s
= Lower Byte Control (pSRAM)
RY/BY#
= Ready/Busy Output
8
A22–21
Am49LV128BM
RESET#f
UB#s
LB#s
RY/BY#
June 17, 2004
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am49LV128
B
M
a
H
10
N
T
TAPE AND REEL
T
=
7 inches
S
=
13 inches
TEMPERATURE RANGE
N
=
Light Industrial (–25°C to +85°C)
SPEED OPTION
See Product Selector Guide and Valid Combinations
WP# PROTECTION
H
=
High sector protection
L
=
Low sector protection
pSRAM
Blank= Standard Supplier
a
=
Second Supplier
PROCESS TECHNOLOGY
M =
0.23 µm MirrorBit
pSRAM DEVICE DENSITY
B
=
32 Mbits
AMD DEVICE NUMBER/DESCRIPTION
Am49LV128BM
Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
Am29LV128M 128 Megabit (8 M x 16-Bit) Flash Memory and
32 Mbit (2 M x 16-Bit) pseudo Static RAM
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations
June 17, 2004
Am49LV128BM
9
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Device Bus Operations
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
(Note 2)
DQ0–
DQ7
DQ8–
DQ15
Read
L
L
H
H
X
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 3)
X
AIN
(Note 4)
(Note 4)
Accelerated Program
L
H
L
H
(Note 3)
VHH
AIN
(Note 4)
(Note 4)
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
H
X
High-Z
High-Z
Output Disable
L
H
H
H
X
X
X
High-Z
High-Z
Reset
X
X
X
L
X
X
X
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
VID
H
X
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
Sector Group Unprotect
(Note 2)
L
H
L
VID
H
X
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
Temporary Sector Group
Unprotect
X
X
X
VID
H
X
AIN
(Note 4)
(Note 4)
Operation
Standby
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A22:A0. Sector addresses are A22:A15 in both modes.
2. The sector group protect and sector group unprotect functions may also be implemented via programming equipment. See the
“Sector Group Protection and Unprotection” section.
3. If WP# = VIL, the first or last sector remains protected. If WP# = VIH, the first or last sector will be protected or unprotected as
determined by the method described in “Write Protect (WP#)”. All sectors are unprotected when shipped from the factory (The
SecSi Sector may be factory protected depending on version ordered.)
4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
10
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read-Only Operations table for timing specifications and to Figure 14 for the timing diagram.
Refer to the DC Characteristics table for the active
current specification on reading array data.
Am49LV128BM
June 17, 2004
Page Mode Read
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read operation. This mode provides faster read access speed
for random locations within a page. The page size of
the device is 4 words. The appropriate page is selected by the higher address bits A(max)–A2. Address
bits A1–A0 determine the specific word within a page.
This is an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or
tCE and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access,
the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page”
addresses.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
“Word Program Command Sequence” section has details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address
space that each sector occupies.
Refer to the DC Characteristics table for the active
current specification for the write mode. The AC Characteristics section contains timing specification tables
and timing diagrams for write operations.
Write Buffer
Write Buffer Programming allows the system write to a
maximum of 16 words in one programming operation.
This results in faster effective programming time than
the standard programming algorithms. See “Write
Buffer” for more information.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
June 17, 2004
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not
be at VHH for operations other than accelerated programming, or device damage may result. WP# has an
internal pullup; when unconnected, WP# is at VIH.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VIO ± 0.3 V.
(Note that this is a more restricted voltage range than
V IH .) If CE# and RESET# are held at V IH , but not
within V IO ± 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby
modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
Refer to the DC Characteristics table for the standby
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
Refer to the DC Characteristics table for the automatic
sleep mode current specification.
Am49LV128BM
11
RESET#: Hardware Reset Pin
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all read/
write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to
reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 16 for the timing diagram.
VCC Power-up and Power-down Sequencing
The device imposes no restrictions on VCC power-up
or power-down sequencing. Asserting RESET# to VIL
is required during the entire VCC power sequence until
the respective supplies reach their operating voltages.
Once VCC attains its operating voltage, de-assertion of
RESET# to VIH is permitted.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (I CC4 ). If RESET# is
held at VIL but not within VSS±0.3 V, the standby current will be greater.
Table 2.
Sector
12
Output Disable Mode
When the OE# input is at VIH, output from the device
is disabled. The output pins are placed in the high
impedance state.
Sector Address Table
Sector Size
(Kwords)
A22–A15
16-bit
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
0
32
000000–007FFF
SA1
0
0
0
0
0
0
0
1
32
008000–00FFFF
SA2
0
0
0
0
0
0
1
0
32
010000–017FFF
SA3
0
0
0
0
0
0
1
1
32
018000–01FFFF
SA4
0
0
0
0
0
1
0
0
32
020000–027FFF
SA5
0
0
0
0
0
1
0
1
32
028000–02FFFF
SA6
0
0
0
0
0
1
1
0
32
030000–037FFF
SA7
0
0
0
0
0
1
1
1
32
038000–03FFFF
SA8
0
0
0
0
1
0
0
0
32
040000–047FFF
SA9
0
0
0
0
1
0
0
1
32
048000–04FFFF
SA10
0
0
0
0
1
0
1
0
32
050000–057FFF
058000–05FFFF
SA11
0
0
0
0
1
0
1
1
32
SA12
0
0
0
0
1
1
0
0
32
060000–067FFF
SA13
0
0
0
0
1
1
0
1
32
068000–06FFFF
SA14
0
0
0
0
1
1
1
0
32
070000–077FFF
SA15
0
0
0
0
1
1
1
1
32
078000–07FFFF
SA16
0
0
0
1
0
0
0
0
32
080000–087FFF
SA17
0
0
0
1
0
0
0
1
32
088000–08FFFF
SA18
0
0
0
1
0
0
1
0
32
090000–097FFF
SA19
0
0
0
1
0
0
1
1
32
098000–09FFFF
SA20
0
0
0
1
0
1
0
0
32
0A0000–0A7FFF
SA21
0
0
0
1
0
1
0
1
32
0A8000–0AFFFF
SA22
0
0
0
1
0
1
1
0
32
0B0000–0B7FFF
SA23
0
0
0
1
0
1
1
1
32
0B8000–0BFFFF
SA24
0
0
0
1
1
0
0
0
32
0C0000–0C7FFF
SA25
0
0
0
1
1
0
0
1
32
0C8000–0CFFFF
SA26
0
0
0
1
1
0
1
0
32
0D0000–0D7FFF
SA27
0
0
0
1
1
0
1
1
32
0D8000–0DFFFF
SA28
0
0
0
1
1
1
0
0
32
0E0000–0E7FFF
Am49LV128BM
June 17, 2004
Table 2.
Sector
Sector Address Table (Continued)
A22–A15
Sector Size
(Kwords)
16-bit
Address Range
(in hexadecimal)
SA29
0
0
0
1
1
1
0
1
32
0E8000–0EFFFF
SA30
0
0
0
1
1
1
1
0
32
0F0000–0F7FFF
SA31
0
0
0
1
1
1
1
1
32
0F8000–0FFFFF
SA32
0
0
1
0
0
0
0
0
32
100000–107FFF
SA33
0
0
1
0
0
0
0
1
32
108000–10FFFF
SA34
0
0
1
0
0
0
1
0
32
110000–117FFF
SA35
0
0
1
0
0
0
1
1
32
118000–11FFFF
SA36
0
0
1
0
0
1
0
0
32
120000–127FFF
SA37
0
0
1
0
0
1
0
1
32
128000–12FFFF
SA38
0
0
1
0
0
1
1
0
32
130000–137FFF
SA39
0
0
1
0
0
1
1
1
32
138000–13FFFF
SA40
0
0
1
0
1
0
0
0
32
140000–147FFF
SA41
0
0
1
0
1
0
0
1
32
148000–14FFFF
SA42
0
0
1
0
1
0
1
0
32
150000–157FFF
SA43
0
0
1
0
1
0
1
1
32
158000–15FFFF
SA44
0
0
1
0
1
1
0
0
32
160000–167FFF
SA45
0
0
1
0
1
1
0
1
32
168000–16FFFF
SA46
0
0
1
0
1
1
1
0
32
170000–177FFF
SA47
0
0
1
0
1
1
1
1
32
178000–17FFFF
SA48
0
0
1
1
0
0
0
0
32
180000–187FFF
SA49
0
0
1
1
0
0
0
1
32
188000–18FFFF
SA50
0
0
1
1
0
0
1
0
32
190000–197FFF
SA51
0
0
1
1
0
0
1
1
32
198000–19FFFF
SA52
0
0
1
1
0
1
0
0
32
1A0000–1A7FFF
SA53
0
0
1
1
0
1
0
1
32
1A8000–1AFFFF
SA54
0
0
1
1
0
1
1
0
32
1B0000–1B7FFF
SA55
0
0
1
1
0
1
1
1
32
1B8000–1BFFFF
SA56
0
0
1
1
1
0
0
0
32
1C0000–1C7FFF
SA57
0
0
1
1
1
0
0
1
32
1C8000–1CFFFF
SA58
0
0
1
1
1
0
1
0
32
1D0000–1D7FFF
SA59
0
0
1
1
1
0
1
1
32
1D8000–1DFFFF
SA60
0
0
1
1
1
1
0
0
32
1E0000–1E7FFF
SA61
0
0
1
1
1
1
0
1
32
1E8000–1EFFFF
SA62
0
0
1
1
1
1
1
0
32
1F0000–1F7FFF
SA63
0
0
1
1
1
1
1
1
32
1F8000–1FFFFF
SA64
0
1
0
0
0
0
0
0
32
200000–207FFF
SA65
0
1
0
0
0
0
0
1
32
208000–20FFFF
SA66
0
1
0
0
0
0
1
0
32
210000–217FFF
SA67
0
1
0
0
0
0
1
1
32
218000–21FFFF
SA68
0
1
0
0
0
1
0
0
32
220000–227FFF
SA69
0
1
0
0
0
1
0
1
32
228000–22FFFF
SA70
0
1
0
0
0
1
1
0
32
230000–237FFF
SA71
0
1
0
0
0
1
1
1
32
238000–23FFFF
SA72
0
1
0
0
1
0
0
0
32
240000–247FFF
SA73
0
1
0
0
1
0
0
1
32
248000–24FFFF
SA74
0
1
0
0
1
0
1
0
32
250000–257FFF
SA75
0
1
0
0
1
0
1
1
32
258000–25FFFF
SA76
0
1
0
0
1
1
0
0
32
260000–267FFF
June 17, 2004
Am49LV128BM
13
Table 2.
Sector
14
Sector Address Table (Continued)
A22–A15
Sector Size
(Kwords)
16-bit
Address Range
(in hexadecimal)
SA77
0
1
0
0
1
1
0
1
32
268000–26FFFF
SA78
0
1
0
0
1
1
1
0
32
270000–277FFF
SA79
0
1
0
0
1
1
1
1
32
278000–27FFFF
SA80
0
1
0
1
0
0
0
0
32
280000–287FFF
SA81
0
1
0
1
0
0
0
1
32
288000–28FFFF
SA82
0
1
0
1
0
0
1
0
32
290000–297FFF
SA83
0
1
0
1
0
0
1
1
32
298000–29FFFF
SA84
0
1
0
1
0
1
0
0
32
2A0000–2A7FFF
SA85
0
1
0
1
0
1
0
1
32
2A8000–2AFFFF
SA86
0
1
0
1
0
1
1
0
32
2B0000–2B7FFF
SA87
0
1
0
1
0
1
1
1
32
2B8000–2BFFFF
SA88
0
1
0
1
1
0
0
0
32
2C0000–2C7FFF
SA89
0
1
0
1
1
0
0
1
32
2C8000–2CFFFF
SA90
0
1
0
1
1
0
1
0
32
2D0000–2D7FFF
SA91
0
1
0
1
1
0
1
1
32
2D8000–2DFFFF
SA92
0
1
0
1
1
1
0
0
32
2E0000–2E7FFF
SA93
0
1
0
1
1
1
0
1
32
2E8000–2EFFFF
SA94
0
1
0
1
1
1
1
0
32
2F0000–2F7FFF
SA95
0
1
0
1
1
1
1
1
32
2F8000–2FFFFF
SA96
0
1
1
0
0
0
0
0
32
300000–307FFF
SA97
0
1
1
0
0
0
0
1
32
308000–30FFFF
SA98
0
1
1
0
0
0
1
0
32
310000–317FFF
SA99
0
1
1
0
0
0
1
1
32
318000–31FFFF
SA100
0
1
1
0
0
1
0
0
32
320000–327FFF
SA101
0
1
1
0
0
1
0
1
32
328000–32FFFF
SA102
0
1
1
0
0
1
1
0
32
330000–337FFF
SA103
0
1
1
0
0
1
1
1
32
338000–33FFFF
SA104
0
1
1
0
1
0
0
0
32
340000–347FFF
SA105
0
1
1
0
1
0
0
1
32
348000–34FFFF
SA106
0
1
1
0
1
0
1
0
32
350000–357FFF
SA107
0
1
1
0
1
0
1
1
32
358000–35FFFF
SA108
0
1
1
0
1
1
0
0
32
360000–367FFF
SA109
0
1
1
0
1
1
0
1
32
368000–36FFFF
SA110
0
1
1
0
1
1
1
0
32
370000–377FFF
SA111
0
1
1
0
1
1
1
1
32
378000–37FFFF
SA112
0
1
1
1
0
0
0
0
32
380000–387FFF
SA113
0
1
1
1
0
0
0
1
32
388000–38FFFF
SA114
0
1
1
1
0
0
1
0
32
390000–397FFF
SA115
0
1
1
1
0
0
1
1
32
398000–39FFFF
SA116
0
1
1
1
0
1
0
0
32
3A0000–3A7FFF
SA117
0
1
1
1
0
1
0
1
32
3A8000–3AFFFF
SA118
0
1
1
1
0
1
1
0
32
3B0000–3B7FFF
SA119
0
1
1
1
0
1
1
1
32
3B8000–3BFFFF
SA120
0
1
1
1
1
0
0
0
32
3C0000–3C7FFF
SA121
0
1
1
1
1
0
0
1
32
3C8000–3CFFFF
SA122
0
1
1
1
1
0
1
0
32
3D0000–3D7FFF
SA123
0
1
1
1
1
0
1
1
32
3D8000–3DFFFF
SA124
0
1
1
1
1
1
0
0
32
3E0000–3E7FFF
Am49LV128BM
June 17, 2004
Table 2.
Sector
Sector Address Table (Continued)
A22–A15
Sector Size
(Kwords)
16-bit
Address Range
(in hexadecimal)
SA125
0
1
1
1
1
1
0
1
32
3E8000–3EFFFF
SA126
0
1
1
1
1
1
1
0
32
3F0000–3F7FFF
SA127
0
1
1
1
1
1
1
1
32
3F8000–3FFFFF
SA128
1
0
0
0
0
0
0
0
32
400000–407FFF
SA129
1
0
0
0
0
0
0
1
32
408000–40FFFF
SA130
1
0
0
0
0
0
1
0
32
410000–417FFF
SA131
1
0
0
0
0
0
1
1
32
418000–41FFFF
SA132
1
0
0
0
0
1
0
0
32
420000–427FFF
SA133
1
0
0
0
0
1
0
1
32
428000–42FFFF
SA134
1
0
0
0
0
1
1
0
32
430000–437FFF
SA135
1
0
0
0
0
1
1
1
32
438000–43FFFF
SA136
1
0
0
0
1
0
0
0
32
440000–447FFF
SA137
1
0
0
0
1
0
0
1
32
448000–44FFFF
SA138
1
0
0
0
1
0
1
0
32
450000–457FFF
SA139
1
0
0
0
1
0
1
1
32
458000–45FFFF
SA140
1
0
0
0
1
1
0
0
32
460000–467FFF
SA141
1
0
0
0
1
1
0
1
32
468000–46FFFF
SA142
1
0
0
0
1
1
1
0
32
470000–477FFF
SA143
1
0
0
0
1
1
1
1
32
478000–47FFFF
SA144
1
0
0
1
0
0
0
0
32
480000–487FFF
SA145
1
0
0
1
0
0
0
1
32
488000–48FFFF
SA146
1
0
0
1
0
0
1
0
32
490000–497FFF
SA147
1
0
0
1
0
0
1
1
32
498000–49FFFF
SA148
1
0
0
1
0
1
0
0
32
4A0000–4A7FFF
SA149
1
0
0
1
0
1
0
1
32
4A8000–4AFFFF
SA150
1
0
0
1
0
1
1
0
32
4B0000–4B7FFF
SA151
1
0
0
1
0
1
1
1
32
4B8000–4BFFFF
SA152
1
0
0
1
1
0
0
0
32
4C0000–4C7FFF
SA153
1
0
0
1
1
0
0
1
32
4C8000–4CFFFF
SA154
1
0
0
1
1
0
1
0
32
4D0000–4D7FFF
SA155
1
0
0
1
1
0
1
1
32
4D8000–4DFFFF
SA156
1
0
0
1
1
1
0
0
32
4E0000–4E7FFF
SA157
1
0
0
1
1
1
0
1
32
4E8000–4EFFFF
SA158
1
0
0
1
1
1
1
0
32
4F0000–4F7FFF
SA159
1
0
0
1
1
1
1
1
32
4F8000–4FFFFF
SA160
1
0
1
0
0
0
0
0
32
500000–507FFF
SA161
1
0
1
0
0
0
0
1
32
508000–50FFFF
SA162
1
0
1
0
0
0
1
0
32
510000–517FFF
SA163
1
0
1
0
0
0
1
1
32
518000–51FFFF
SA164
1
0
1
0
0
1
0
0
32
520000–527FFF
SA165
1
0
1
0
0
1
0
1
32
528000–52FFFF
SA166
1
0
1
0
0
1
1
0
32
530000–537FFF
SA167
1
0
1
0
0
1
1
1
32
538000–53FFFF
SA168
1
0
1
0
1
0
0
0
32
540000–547FFF
SA169
1
0
1
0
1
0
0
1
32
548000–54FFFF
SA170
1
0
1
0
1
0
1
0
32
550000–557FFF
SA171
1
0
1
0
1
0
1
1
32
558000–55FFFF
SA172
1
0
1
0
1
1
0
0
32
560000–567FFF
June 17, 2004
Am49LV128BM
15
Table 2.
Sector
16
Sector Address Table (Continued)
A22–A15
Sector Size
(Kwords)
16-bit
Address Range
(in hexadecimal)
SA173
1
0
1
0
1
1
0
1
32
568000–56FFFF
SA174
1
0
1
0
1
1
1
0
32
570000–577FFF
SA175
1
0
1
0
1
1
1
1
32
578000–57FFFF
SA176
1
0
1
1
0
0
0
0
32
580000–587FFF
SA177
1
0
1
1
0
0
0
1
32
588000–58FFFF
SA178
1
0
1
1
0
0
1
0
32
590000–597FFF
SA179
1
0
1
1
0
0
1
1
32
598000–59FFFF
SA180
1
0
1
1
0
1
0
0
32
5A0000–5A7FFF
SA181
1
0
1
1
0
1
0
1
32
5A8000–5AFFFF
SA182
1
0
1
1
0
1
1
0
32
5B0000–5B7FFF
SA183
1
0
1
1
0
1
1
1
32
5B8000–5BFFFF
SA184
1
0
1
1
1
0
0
0
32
5C0000–5C7FFF
SA185
1
0
1
1
1
0
0
1
32
5C8000–5CFFFF
SA186
1
0
1
1
1
0
1
0
32
5D0000–5D7FFF
SA187
1
0
1
1
1
0
1
1
32
5D8000–5DFFFF
SA188
1
0
1
1
1
1
0
0
32
5E0000–5E7FFF
SA189
1
0
1
1
1
1
0
1
32
5E8000–5EFFFF
SA190
1
0
1
1
1
1
1
0
32
5F0000–5F7FFF
SA191
1
0
1
1
1
1
1
1
32
5F8000–5FFFFF
SA192
1
1
0
0
0
0
0
0
32
600000–607FFF
SA193
1
1
0
0
0
0
0
1
32
608000–60FFFF
SA194
1
1
0
0
0
0
1
0
32
610000–617FFF
SA195
1
1
0
0
0
0
1
1
32
618000–61FFFF
SA196
1
1
0
0
0
1
0
0
32
620000–627FFF
SA197
1
1
0
0
0
1
0
1
32
628000–62FFFF
SA198
1
1
0
0
0
1
1
0
32
630000–637FFF
SA199
1
1
0
0
0
1
1
1
32
638000–63FFFF
SA200
1
1
0
0
1
0
0
0
32
640000–647FFF
SA201
1
1
0
0
1
0
0
1
32
648000–64FFFF
SA202
1
1
0
0
1
0
1
0
32
650000–657FFF
SA203
1
1
0
0
1
0
1
1
32
658000–65FFFF
SA204
1
1
0
0
1
1
0
0
32
660000–667FFF
SA205
1
1
0
0
1
1
0
1
32
668000–66FFFF
SA206
1
1
0
0
1
1
1
0
32
670000–677FFF
SA207
1
1
0
0
1
1
1
1
32
678000–67FFFF
SA208
1
1
0
1
0
0
0
0
32
680000–687FFF
SA209
1
1
0
1
0
0
0
1
32
688000–68FFFF
SA210
1
1
0
1
0
0
1
0
32
690000–697FFF
SA211
1
1
0
1
0
0
1
1
32
698000–69FFFF
SA212
1
1
0
1
0
1
0
0
32
6A0000–6A7FFF
SA213
1
1
0
1
0
1
0
1
32
6A8000–6AFFFF
SA214
1
1
0
1
0
1
1
0
32
6B0000–6B7FFF
SA215
1
1
0
1
0
1
1
1
32
6B8000–6BFFFF
SA216
1
1
0
1
1
0
0
0
32
6C0000–6C7FFF
SA217
1
1
0
1
1
0
0
1
32
6C8000–6CFFFF
SA218
1
1
0
1
1
0
1
0
32
6D0000–6D7FFF
SA219
1
1
0
1
1
0
1
1
32
6D8000–6DFFFF
SA220
1
1
0
1
1
1
0
0
32
6E0000–6E7FFF
Am49LV128BM
June 17, 2004
Table 2.
Sector
Sector Address Table (Continued)
A22–A15
Sector Size
(Kwords)
16-bit
Address Range
(in hexadecimal)
SA221
1
1
0
1
1
1
0
1
32
6E8000–6EFFFF
SA222
1
1
0
1
1
1
1
0
32
6F0000–6F7FFF
SA223
1
1
0
1
1
1
1
1
32
6F8000–6FFFFF
SA224
1
1
1
0
0
0
0
0
32
700000–707FFF
SA225
1
1
1
0
0
0
0
1
32
708000–70FFFF
SA226
1
1
1
0
0
0
1
0
32
710000–717FFF
SA227
1
1
1
0
0
0
1
1
32
718000–71FFFF
SA228
1
1
1
0
0
1
0
0
32
720000–727FFF
SA229
1
1
1
0
0
1
0
1
32
728000–72FFFF
SA230
1
1
1
0
0
1
1
0
32
730000–737FFF
SA231
1
1
1
0
0
1
1
1
32
738000–73FFFF
SA232
1
1
1
0
1
0
0
0
32
740000–747FFF
SA233
1
1
1
0
1
0
0
1
32
748000–74FFFF
SA234
1
1
1
0
1
0
1
0
32
750000–757FFF
SA235
1
1
1
0
1
0
1
1
32
758000–75FFFF
SA236
1
1
1
0
1
1
0
0
32
760000–767FFF
SA237
1
1
1
0
1
1
0
1
32
768000–76FFFF
SA238
1
1
1
0
1
1
1
0
32
770000–777FFF
SA239
1
1
1
0
1
1
1
1
32
778000–77FFFF
SA240
1
1
1
1
0
0
0
0
32
780000–787FFF
SA241
1
1
1
1
0
0
0
1
32
788000–78FFFF
SA242
1
1
1
1
0
0
1
0
32
790000–797FFF
SA243
1
1
1
1
0
0
1
1
32
798000–79FFFF
SA244
1
1
1
1
0
1
0
0
32
7A0000–7A7FFF
SA245
1
1
1
1
0
1
0
1
32
7A8000–7AFFFF
SA246
1
1
1
1
0
1
1
0
32
7B0000–7B7FFF
SA247
1
1
1
1
0
1
1
1
32
7B8000–7BFFFF
SA248
1
1
1
1
1
0
0
0
32
7C0000–7C7FFF
SA249
1
1
1
1
1
0
0
1
32
7C8000–7CFFFF
SA250
1
1
1
1
1
0
1
0
32
7D0000–7D7FFF
SA251
1
1
1
1
1
0
1
1
32
7D8000–7DFFFF
SA252
1
1
1
1
1
1
0
0
32
7E0000–7E7FFF
SA253
1
1
1
1
1
1
0
1
32
7E8000–7EFFFF
SA254
1
1
1
1
1
1
1
0
32
7F0000–7F7FFF
SA255
1
1
1
1
1
1
1
1
32
7F8000–7FFFFF
SecSi (Secured Silicon) Sector Flash
Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 256 bytes in length, and
uses a SecSi Sector Indicator Bit (DQ7) to indicate
whether or not the SecSi Sector is locked when
shipped from the factory. This bit is permanently set at
the factory and cannot be changed, which prevents
cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field.
June 17, 2004
AMD offers the device with the SecSi Sector either
customer lockable (standard shipping option) or factory locked (contact an AMD sales representative for
ordering information). The customer-lockable version
is shipped with the SecSi Sector unprotected, allowing
customers to program the sector after receiving the
device. The customer-lockable version also has the
SecSi Sector Indicator Bit permanently set to a “0.”
The factory-locked version is always protected when
shipped from the factory, and has the SecSi (Secured
Silicon) Sector Indicator Bit permanently set to a “1.”
Thus, the SecSi Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. Note that the ACC
Am49LV128BM
17
function and unlock bypass modes are not available
when the SecSi Sector is enabled.
area and none of the bits in the SecSi Sector memory
space can be modified in any way.
The SecSi sector address space in this device is allocated as follows:
The SecSi Sector area can be protected using one of
the following procedures:
Table 3.
SecSi Sector
Address Range
000000h–000007h
000008h–00007Fh
SecSi Sector Contents
Customer
Lockable
Determined by
customer
„ Write the three-cycle Enter SecSi Sector Region
ESN Factory
Locked
ExpressFlash
Factory Locked
ESN
ESN or
determined by
customer
Unavailable
Determined by
customer
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the first sector (SA0).
This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or
until power is removed from the device. On power-up,
or following a hardware reset, the device reverts to
sending commands to sector SA0.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
Unless otherwise specified, the device is shipped such
that the customer may program and protect the 256byte SecSi sector.
The system may program the SecSi Sector using the
write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See Command Definitions.
Programming and protecting the SecSi Sector must be
used with caution since, once protected, there is no
procedure available for unprotecting the SecSi Sector
18
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector
without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
„ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Once the SecSi Sector is programmed, locked and
verified, the system must write the Exit SecSi Sector
Region command sequence to return to reading and
writing within the remainder of the array.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
In devices with an ESN, the SecSi Sector is protected
when the device is shipped from the factory. The SecSi
Sector cannot be modified in any way. An ESN Factory
Locked device has an 16-byte random ESN at addresses 000000h–000007h. Please contact your local
AMD sales representative for details on ordering ESN
Factory Locked devices.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service (Express
Flash Factory Locked). The devices are then shipped
from AMD’s factory with the SecSi Sector permanently
locked. Contact an AMD representative for details on
using AMD’s ExpressFlash service.
Note: MCP devices with second supplier pSRAM
have 000000h address programmed to 0000h data.
Am49LV128BM
June 17, 2004
Sector Group Protection and
Unprotection
The hardware sector group protection feature disables
both program and erase operations in any sector
group. The hardware sector group unprotection feature re-enables both program and erase operations in
previously protected sector groups. Sector group protection/unprotection can be implemented via two
methods.
Sector group protection/unprotection requires VID on
the RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 2
shows the algorithms and Figure 24 shows the timing
diagram. This method uses standard microprocessor
bus cycle timing. For sector group unprotect, all unprotected sector group must first be protected prior to the
first sector group unprotect write cycle.
The device is shipped with all sector groups unprotected. AMD offers the option of programming and
protecting sector groups at its factory prior to shipping
the device through AMD’s ExpressFlash™ Service.
Contact an AMD representative for details.
It is possible to determine whether a sector group is
protected or unprotected. See the Sector Group Protection and Unprotection section for details.
Table 4.
Sector Group Protection/Unprotection
Address Table
Sector Group
A22–A15
SA0
00000000
SA1
00000001
SA2
00000010
SA3
00000011
SA4–SA7
000001xx
SA8–SA11
000010xx
SA12–SA15
000011xx
SA16–SA19
000100xx
SA20–SA23
000101xx
SA24–SA27
000110xx
SA28–SA31
000111xx
SA32–SA35
001000xx
SA36–SA39
001001xx
SA40–SA43
001010xx
SA44–SA47
001011xx
SA48–SA51
001100xx
SA52–SA55
001101xx
SA56–SA59
001110xx
SA60–SA63
001111xx
SA64–SA67
010000xx
SA68–SA71
010001xx
SA72–SA75
010010xx
SA76–SA79
010011xx
June 17, 2004
Am49LV128BM
Sector Group
A22–A15
SA80–SA83
010100xx
SA84–SA87
010101xx
SA88–SA91
010110xx
SA92–SA95
010111xx
SA96–SA99
011000xx
SA100–SA103
011001xx
SA104–SA107
011010xx
SA108–SA111
011011xx
SA112–SA115
011100xx
SA116–SA119
011101xx
SA120–SA123
011110xx
SA124–SA127
011111xx
SA128–SA131
100000xx
SA132–SA135
100001xx
SA136–SA139
100010xx
SA140–SA143
100011xx
SA144–SA147
100100xx
SA148–SA151
100101xx
SA152–SA155
100110xx
SA156–SA159
100111xx
SA160–SA163
101000xx
SA164–SA167
101001xx
SA168–SA171
101010xx
SA172–SA175
101011xx
SA176–SA179
101100xx
SA180–SA183
101101xx
SA184–SA187
101110xx
SA188–SA191
101111xx
SA192–SA195
110000xx
SA196–SA199
110001xx
SA200–SA203
110010xx
SA204–SA207
110011xx
SA208–SA211
110100xx
SA212–SA215
110101xx
SA216–SA219
110110xx
SA220–SA223
110111xx
SA224–SA227
111000xx
SA228–SA231
111001xx
SA232–SA235
111010xx
SA236–SA239
111011xx
SA240–SA243
111100xx
SA244–SA247
111101xx
SA248–SA251
111110xx
SA252
11111100
SA253
11111101
SA254
11111110
SA255
11111111
19
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the last sector without using VID.
Write Protect is one of two functions provided by the
WP#/ACC input.
START
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the last
sector independently of whether those sectors were
protected or unprotected using the method described
in “Sector Group Protection and Unprotection”. Note
that if WP#/ACC is at V IL when the device is in the
standby mode, the maximum input load current is increased. See the table in “DC Characteristics”.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the last sector was previously
set to be protected or unprotected using the method
described in “Sector Group Protection and Unprotection”. Note that WP# has an internal pullup; when unconnected, WP# is at VIH.
Temporary Sector Group Unprotect
This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by
setting the RESET# pin to VID. During this mode, formerly protected sector groups can be programmed or
erased by selecting the sector group addresses. Once
V ID is removed from the RESET# pin, all the previously protected sector groups are protected again.
Figure 1 shows the algorithm, and Figure 23 shows
the timing diagrams, for this feature.
20
Temporary Sector Group
Unprotect Completed
(Note 2)
Notes:
1. All protected sector groups unprotected (If WP# = VIL,
the last sector group will remain protected).
2. All previously protected sector groups are protected
once again.
Am49LV128BM
Figure 1. Temporary Sector Group
Unprotect Operation
June 17, 2004
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Protect another
sector?
PLSCNT
= 1000?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Protect
complete
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
June 17, 2004
In-System Sector Group Protect/Unprotect Algorithms
Am49LV128BM
21
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 9 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V CC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 5–8. To terminate reading CFI data,
the system must write the reset command.
Table 5.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5–8. The
system must write the reset command to return the device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies
of these documents.
CFI Query Identification String
Addresses (x16)
Data
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
22
Description
Am49LV128BM
June 17, 2004
Table 6.
System Interface String
Addresses (x16)
Data
Description
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0007h
Typical timeout per single byte/word write 2N µs
20h
0007h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0001h
Max. timeout for byte/word write 2N times typical
24h
0005h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 7.
Addresses (x16)
Device Geometry Definition
Data
Description
2N
27h
0018h
Device Size =
28h
29h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
00FFh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
June 17, 2004
byte
Am49LV128BM
23
Table 8.
Primary Vendor-Specific Extended Query
Addresses (x16)
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0008h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0010b = 0.23 µm MirrorBit
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0001h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
00B5h
4Eh
00C5h
4Fh
0004h/
0005h
50h
0001h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
Program Suspend
00h = Not Supported, 01h = Supported
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 9 defines the valid register command
sequences. Writing incorrect address and data values
or writing them in the improper sequence may place
the device in an unknown state. A reset command is
then required to return the device to reading array
data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
24
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any non-erase-
Am49LV128BM
June 17, 2004
suspended sector. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode
if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode.
See the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read parameters, and Figure 14 shows the timing diagram.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence:
„ A read cycle at address XX00h returns the manu-
facturer code.
„ Three read cycles at addresses 01h, 0Eh, and 0Fh
Reset Command
return the device code.
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the device entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Writeto-Buffer-Abort Reset command sequence to reset the
device for the next operation.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
June 17, 2004
and determine whether or not a sector is protected.
Tables 9 show the address and data requirements.
The autoselect command sequence may be written to
an address that is either in the read or erase-suspendread mode. The autoselect command may not be written while the device is actively programming or erasing.
„ A read cycle to an address containing a sector ad-
dress (SA), and the address 02h on A7–A0 in word
mode returns 01h if the sector is protected, or 00h if
it is unprotected.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 8-word random Electronic Serial Number (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the device to normal operation. Tables 9 show the address
and data requirements for both command sequences.
See also “SecSi (Secured Silicon) Sector Flash
Memory Region” for further information. Note that the
ACC function and unlock bypass modes are not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Tables 9 show the address
and data requirements for the word program command sequence.
Am49LV128BM
25
When the Embedded Program algorithm is complete,
the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when a program operation is in progress. The program command sequence
should be reinitiated once the device has returned to
the read mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Tables 9 show the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
Write Buffer Programming
Write Buffer Programming allows the system write to a
maximum of 16 words in one programming operation.
This results in faster effective programming time than
the standard programming algorithms. The Write
Buffer Programming command sequence is initiated
by first writing two unlock cycles. This is followed by a
26
third write cycle containing the Write Buffer Load command written at the Sector Address in which programming will occur. The fourth cycle writes the sector
address and the number of word locations, minus one,
to be programmed. For example, if the system will program 6 unique address locations, then 05h should be
written to the device. This tells the device how many
write buffer addresses will be loaded with data and
therefore when to expect the Program Buffer to Flash
command. The number of locations to program cannot
exceed the size of the write buffer or the operation will
abort.
The fifth cycle writes the first address location and
data to be programmed. The write-buffer-page is selected by address bits AMAX–A4. All subsequent address/data pairs must fall within the selected-writebuffer-page. The system then writes the remaining address/data pairs into the write buffer. Write buffer locations may be loaded in any order.
The write-buffer-page address must be the same for
all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be performed across multiple write-buffer pages. This also
means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts
to load programming data outside of the selected
write-buffer page, the operation will abort.
Note that if a Write Buffer address location is loaded
multiple times, the address/data pair counter will be
decremented for every data load operation. The host
system must therefore account for loading a writebuffer location more than once. The counter decrements for each data load operation, not for each
unique write-buffer-address location. Note also that if
an address location is loaded more than once into the
buffer, the final data loaded for that address will be
programmed.
Once the specified number of write buffer locations
have been loaded, the system must then write the Program Buffer to Flash command at the sector address.
Any other address and data combination aborts the
Write Buffer Programming operation. The device then
begins programming. Data polling should be used
while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write
Buffer Programming.
The write-buffer programming operation can be suspended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
Am49LV128BM
June 17, 2004
„ Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
„ Write to an address in a sector different than the
one specified during the Write-Buffer-Load command.
„ Write an Address/Data pair to a different write-
buffer-page than the one selected by the Starting
Address during the write buffer data loading stage
of the operation.
„ Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the device for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is required when using Write-Buffer-Programming features
in Unlock Bypass mode.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
June 17, 2004
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
V HH on the WP#/ACC pin, the device automatically
enters the Unlock Bypass mode. The system may
then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage
on the WP#/ACC pin to accelerate the operation. Note
that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device
damage may result. WP# has an internal pullup; when
unconnected, WP# is at VIH.
Figure 5 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
Am49LV128BM
27
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Write to a different
sector address
Abort Write to
Buffer Operation?
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
(Note 1)
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Notes:
Read DQ7 - DQ0 at
Last Loaded Address
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
2.
DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3.
If this flowchart location was reached because
DQ5= “1”, then the device FAILED. If this
flowchart location was reached because DQ1=
“1”, then the Write to Buffer operation was
ABORTED. In either case, the proper reset
command must be written before the device can
begin another operation. If DQ1=1, write the
Write-Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset command.
4.
See Tables 9 and 10 for command sequences
required for write buffer programming.
Yes
DQ7 = Data?
No
1.
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
Read DQ7 - DQ0 with
address = Last Loaded
Address
(Note 2)
DQ7 = Data?
Yes
No
(Note 3)
FAIL or ABORT
Figure 3.
28
PASS
Write Buffer Programming Operation
Am49LV128BM
June 17, 2004
time Program area), then the user must use the proper
command sequences to enter and exit this region.
The system may also write the autoselect command
sequence when the device is in the Program Suspend
mode. The system can read as many autoselect
codes as required. When the device exits the autoselect mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See
Autoselect Command Sequence for more information.
START
Write Program
Command Sequence
After the Program Resume command is written, the
device reverts to programming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status for more
information.
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
The system must write the Program Resume command (address bits are don’t care) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be
written after the device has resume programming.
There is no time-out limit for the Program Suspend
command. After the Program Suspend command is
written, the device will stay in Program Suspend mode
until the Program Resume command or the RESET
command/operation is written.
Yes
Programming
Completed
Note: See Tables 9 and 10 for program command
sequence.
Figure 4.
Program Operation
or Write-to-Buffer
Sequence in Progress
Program Operation
Program Suspend/Program Resume
Command Sequence
Write address/data
XXXh/B0h
The Program Suspend command allows the system to
interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from
any non-suspended sector. Within the suspended sector, data may be read from addresses outside of the
page (for example, Amax–A4) being programmed.
When the Program Suspend command is written during a programming process, the device halts the program operation within 15 µs maximum (5 µs typical)
and updates the status bits. Addresses are not required when writing the Program Suspend command.
Command is also valid for
Erase-suspended-program
operations
Wait 15 µs
Read data as
required
No
After the programming operation has been suspended, the system can read array data from any nonsuspended sector or from selected addresses within
the suspended sector (see previous paragraph). The
Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any
sectors not in Erase Suspend or Program Suspend. If
a read is needed from the SecSi Sector area (One-
June 17, 2004
Write Program Suspend
Command Sequence
Am49LV128BM
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Done
reading?
Yes
Write address/data
XXXh/30h
Write Program Resume
Command Sequence
Device reverts to
operation prior to
Program Suspend
29
Figure 5.
Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 9 show
the address and data requirements for the chip erase
command sequence.
When the Embedded Erase algorithm is complete, the
device returns to the read mode and addresses are no
longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2.
Refer to the Write Operation Status section for information on these status bits.
Any commands written during the chip erase operation
are ignored. Note that the SecSi Sector, autoselect,
and CFI functions are unavailable when an erase operation is in progress. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the chip erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 10 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
30
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase
address and command following the exceeded timeout may or may not be accepted. It is recommended
that processor interrupts be disabled during this time
to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is written. Any command other than Sector
Erase or Erase Suspend during the time-out period resets the device to the read mode. Note that
the SecSi Sector, autoselect, and CFI functions are
unavailable when an erase operation is in progress.
The system must rewrite the command sequence and
any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Am49LV128BM
June 17, 2004
When the Erase Suspend command is written during
the sector erase operation, the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase
operation. However, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
Embedded
Erase
algorithm
in progress
Data = FFh?
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard word program operation.
Refer to the Write Operation Status section for more
information.
Yes
Erasure Completed
Figure 6.
Erase Operation
Notes:
1. See Tables 9 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the
sector erase operation, including the 50 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
June 17, 2004
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command
can be written after the chip has resumed erasing.
There is no time-out limit for the Erase Suspend command. After the Erase Suspend command is written,
the device will stay in Erase Suspend mode until the
Erase Resume command or the RESET command/operation is written.
Am49LV128BM
31
Command Definitions
Table 9.
Read (Note 6)
Autoselect (Note 8)
Reset (Note 7)
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence
(Note 1)
Command Definitions
Addr
Data
1
RA
RD
First
Second
Third
Fourth
Addr
Data
Addr
Data
Addr
Fifth
Data
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 9)
4
555
AA
2AA
55
555
90
X01
227E
SecSi™ Sector Factory Protect
(Note 10)
4
555
AA
2AA
55
555
90
X03
(Note 10)
Sector Group Protect Verify
(Note 12)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Sixth
Addr
Data
Addr
Data
X0E
2212
X0F
2200
Enter SecSi Sector Region
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 11)
3
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 14)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 15)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 16)
1
BA
B0
Program/Erase Resume (Note 17)
1
BA
30
CFI Query (Note 18)
1
55
98
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
lowest address sector, the data is 88H for factory locked and 08H
for not factory locked.
2.
All values are in hexadecimal.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD, PD, and WC.
5.
Unless otherwise noted, address bits A22–A11 are don’t cares.
6.
No unlock or command cycles required when device is in read
mode.
7.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
while the device is providing status information.
8.
The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect
Command Sequence section for more information.
9.
The device ID must be read in three cycles.
10. If WP# protects the highest address sector, the data is 98H for
factory locked and 18H for not factory locked. If WP# protects the
32
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A22–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. The total number of cycles in the command sequence is
determined by the number of words written to the write buffer. The
maximum number of cycles in the command sequence is 21.
12. The data is 00h for an unprotected sector and 01h for a protected
sector.
13. Command sequence resets device for next command after
aborted write-to-buffer operation.
14. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
15. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
16. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
17. The Erase Resume command is valid only during the Erase
Suspend mode.
18. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am49LV128BM
June 17, 2004
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 10 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method
for determining whether a program or erase operation is
complete or in progress.
in the AC Characteristics section shows the Data#
Polling timing diagram.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether the device is in Erase
Suspend. Data# Polling is valid after the rising edge of the
final WE# pulse in the command sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the
read mode.
DQ7 = Data?
No
No
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
Table 10 shows the outputs for Data# Polling on DQ7.
Figure 8 shows the Data# Polling algorithm. Figure 20
June 17, 2004
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then
the device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 7.
Data# Polling Algorithm
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Am49LV128BM
33
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
START
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Read DQ7–DQ0
Read DQ7–DQ0
After an erase command sequence is written, if all sectors
selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on
DQ7: Data# Polling).
Toggle Bit
= Toggle?
Yes
No
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Figure 8.
Toggle Bit Algorithm
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
34
DQ5 = 1?
Yes
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Table 10 shows the outputs for Toggle Bit I on DQ6.
Figure 9 shows the toggle bit algorithm. Figure 21 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
No
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if
DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 10 to compare outputs for DQ2 and DQ6.
Figure 9 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2
and DQ6 in graphical form.
Am49LV128BM
June 17, 2004
Reading Toggle Bits DQ6/DQ2
Refer to Figure 9 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 9).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program, erase, or writeto-buffer time has exceeded a specified internal pulse
count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
June 17, 2004
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
In all these cases, the system must write the reset
command (or the Unlock Bypass Reset command if in
Unlock Bypass mode) to return the device to the reading the array (or to erase-suspend-read if the device
was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 10 shows the status of DQ3 relative to the other
status bits.
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation
was aborted. Under these conditions DQ1 produces a
“1”. The system must issue the Write-to-Buffer-AbortReset command sequence to return the device to
reading array data. See Write Buffer Programming
section for more details.
Am49LV128BM
35
Table 10.
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
Write-toBuffer
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Program-Suspended
ProgramSector
Suspend
Non-Program
Read
Suspended Sector
Erase-Suspended
EraseSector
Suspend
Non-Erase Suspended
Read
Sector
Erase-Suspend-Program
(Embedded Program)
Busy (Note 3)
Abort (Note 4)
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ2
(Note 2)
No toggle
Toggle
DQ1
0
N/A
N/A
Toggle
N/A
DQ3
N/A
1
Invalid (not allowed)
Data
1
No toggle
0
Data
DQ7#
Toggle
0
N/A
N/A
N/A
DQ7#
DQ7#
Toggle
Toggle
0
0
N/A
N/A
N/A
N/A
0
1
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to ‘1’ when the device has aborted the write-to-buffer operation.
36
Am49LV128BM
June 17, 2004
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
VIO . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
20 ns
A9, OE#, ACC, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
Figure 9. Maximum Negative
Overshoot Waveform
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 10. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20
ns. See Figure 11.
2. Minimum DC input voltage on pins A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot V SS to –2.0 V for
periods of up to 20 ns. See Figure 10. Maximum DC
input voltage on pin A9, OE#, ACC, and RESET# is
+12.5 V which may overshoot to +14.0 V for periods up
to 20 ns.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 10. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Light Industrial (N) Devices
Ambient Temperature (TA) . . . . . . . . . –25°C to +85°C
Supply Voltages
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7–3.1 V
Note: Operating ranges define those limits between which
the functionality of the device is guaranteed.
June 17, 2004
Am49LV128BM
37
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Max
Uni
t
±1.0
µA
ILI
Input Load Current (1)
VIN = VSS to VCC,
VCC = VCC max
ILIT
ACC Input Load Current
VCC = VCC max
35
µA
ILR
Reset Leakage Current
VCC = VCC max; RESET# = 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
µA
ICC1
VCC Active Read Current
(2, 3)
CE# = VIL, OE# = VIH
ICC2
5 MHz
15
20
1 MHz
15
20
VCC Initial Page Read Current (2, 3) CE# = VIL, OE# = VIH
30
50
mA
ICC3
VCC Intra-Page Read Current (2, 3) CE# = VIL, OE# = VIH
10
20
mA
ICC4
VCC Active Write Current (3, 4)
CE# = VIL, OE# = VIH
50
60
mA
ICC5
VCC Standby Current (3)
CE#, RESET# = VCC ± 0.3 V, WP# = VIH
1
5
µA
ICC6
VCC Reset Current (3)
RESET# = VSS ± 0.3 V, WP# = VIH
1
5
µA
ICC7
Automatic Sleep Mode (3, 5)
VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V,
WP# = VIH
1
5
µA
VIL
Input Low Voltage 1(6, 7)
–0.5
0.8
V
VIH
Input High Voltage 1 (6, 7)
1.9
VCC + 0.5
V
VHH
Voltage for ACC Program
Acceleration
VCC = 2.7–3.1 V
11.5
12.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 2.7–3.1 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min = VIO
0.15 x VIO
V
VOH1
VOH2
VLKO
Output High Voltage
mA
IOH = –2.0 mA, VCC = VCC min = VIO
0.85 VIO
V
IOH = –100 µA, VCC = VCC min = VIO
VIO–0.4
V
Low VCC Lock-Out Voltage (7)
2.3
Notes:
1. On the WP#/ACC pin only, the maximum input load current when
WP# = VIL is ± 5.0 µA.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at
VIH.
2.5
5.
Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 30 ns.
6.
If VIO < VCC, maximum VIL for CE# and DQ I/Os is 0.3 VIO.
Maximum VIH for these connections is VIO + 0.3 V
3.
Maximum ICC specifications are tested with VCC = VCCmax.
7.
VCC voltage requirements.
4.
ICC active while Embedded Erase or Embedded Program is in
progress.
8.
VIO voltage requirements.
9.
Not 100% tested.
38
Typ
Am49LV128BM
V
June 17, 2004
TEST CONDITIONS
Table 11.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
All Speeds
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 VIO
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Unit
Note: If VIO < VCC, the reference level is 0.5 VIO.
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
0.5 VIO V
Output
0.0 V
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.
Figure 12. Input Waveforms and
Measurement Levels
June 17, 2004
Am49LV128BM
39
AC CHARACTERISTICS
VCC Power-up
Parameter
Description
Test Setup
Speed
Unit
tVCS
VCC Setup Time
Min
50
µs
tRSTH
RESET# Low Hold Time
Min
50
µs
tVCS
VCC
tRSTH
RESET#
Figure 13.
40
VCC Power-up Diagram
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
Flash Read-Only Operations
Parameter
JEDEC
Std.
Description
Test Setup
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
15
11
Unit
Min
105
110
ns
CE#, OE# = VIL
Max
105
110
ns
OE# = VIL
Max
105
110
ns
Max
25
30
ns
25
30
ns
tPACC Page Access Time
tGLQV
tOE
Output Enable to Output Delay
Max
tEHQZ
tDF
Chip Enable to Output Bus Release (Note 1)
Max
14
ns
tGHQZ
tDF
Output Enable to Output Bus Release (Note
1)
Max
14
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Read
Output Enable Hold
Toggle and
Time (Note 1)
Data# Polling
Min
0
ns
tOEH
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 11 for test specifications.
3. AC Specifications are tested with VIO = VCC. Contact AMD for information on AC operations with VIO ≠VCC.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 14.
June 17, 2004
Read Operations Timings
Am49LV128BM
41
AC CHARACTERISTICS
Same Page
A22-A2
A1-A0
Aa
Ab
tPACC
tACC
Data Bus
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
Figure 15.
42
Page Read Timings
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
Note: Not 100% tested.
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
CE#, OE#
RESET#
tRP
Figure 16.
June 17, 2004
Reset Timings
Am49LV128BM
43
AC CHARACTERISTICS
Erase and Program Operations
Parameter
15
11
Unit
105
110
ns
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
15
µs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
11.8
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation
(Note 2)
Word
Typ
54
µs
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tWLAX
tWHWH1
tWHWH2
tWHWH1
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
44
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
DOUT
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.
Program Operation Timings
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
Figure 18.
June 17, 2004
tVHH
Accelerated Program Timing Diagram
Am49LV128BM
45
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
30h
In
Progress
Complete
10 for Chip Erase
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. These waveforms are for the word mode.
Figure 19.
46
Chip/Sector Erase Operation Timings
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
June 17, 2004
Data# Polling Timings (During Embedded Algorithms)
Am49LV128BM
47
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22.
48
DQ2 vs. DQ6
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
Figure 23.
June 17, 2004
Temporary Sector Group Unprotect Timing Diagram
Am49LV128BM
49
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector Group Protect: 150 µs,
Sector Group Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector group protect, A6 = 0, A1 = 1, A0 = 0. For sector group unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 24.
50
Sector Group Protect and Unprotect Timing Diagram
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC
Std.
Description
15, 11
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
65
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
45
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
15
µs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
11.8
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming
Operation (Note 2)
Word
Typ
54
µs
Typ
0.5
sec
tWHWH1
tWHWH2
tWHWH1
tWHWH2 Sector Erase Operation (Note 2)
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
June 17, 2004
Am49LV128BM
51
AC CHARACTERISTICS
PA for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
52
Am49LV128BM
June 17, 2004
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Chip Erase Time
128
Excludes 00h programming
prior to erasure (Note 5)
Effective Write Buffer Program
Time (Note 3)
sec
Per Word
15
1000
µs
Program Time
Word
60
1000
µs
Effective Accelerated
Program Time (Note 3)
Word
11.8
785
µs
Accelerated Program Time
Word
54
900
µs
Chip Program Time (Note 4)
126
Excludes system level
overhead (Note 6)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
10 for further information on command definitions.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
FBGA
4.2
5
pF
COUT
Output Capacitance
VOUT = 0
FBGA
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
FBGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
June 17, 2004
Am49LV128BM
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
53
AM49LV128BM MCP WITH STANDARD SUPPLIER
PSRAM BLOCK DIAGRAM
VDD
VSS
A20
to
A0
DQ16
to
DQ9
DQ8
to
DQ1
ADDRESS
LATCH &
BUFFER
INPUT /
OUTPUT
BUFFER
ROW
DECODER
MEMORY
CELL
ARRAY
33,554,432 bit
INPUT DATA
LATCH &
CONTROL
SENSE /
SWITCH
OUTPUT
DATA
CONTROL
COLUMN /
DECODER
ADDRESS
LATCH &
BUFFER
CE2
CE1
POWER
CONTROL
TIMING
CONTROL
WE
LB
UB
OE
54
Am49LV128BM
June 17, 2004
FUNCTION TRUTH TABLE
Mode
Standby (Deselect)
Output Disable (Note 1)
Output Disable (No Read)
Read (Upper Byte)
CE2
H
CE1#
H
Read (Lower Byte)
Read (Word)
H
WE#
X
H
OE#
X
H
LB#
X
H
H
H
UB#
X
X
H
L
A20-0
X
(Note 3)
Valid
Valid
H
L
L
H
Valid
L
L
Valid
H
H
H
L
Valid
Valid
L
H
Valid
L
L
Valid
X
X
X
L
No Write
Write (Upper Byte)
L
Write (Lower Byte)
H (Note 4)
Write (Word)
Power Down (Note 2)
L
X
X
DQ7-0
DQ15-8
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z Output Valid
Output
High-Z
Valid
Output
Output Valid
Valid
Invalid
Invalid
Invalid Input Valid
Input
Invalid
Valid
Input
Input Valid
Valid
High-Z
High-Z
Note:
1.
Should not be kept this logic condition longer than 1 µs.
2.
Power Down mode can be entered from Standby state and all DQ
pins are in High-Z state. Data retention depends on the selection
of Power Down Program. Refer to Power down for details.
3.
Can be either VIL or VIH but must be valid for read or write.
June 17, 2004
4.
OE# can be VIL during Write operation if the following conditions
are satisfied; Write pulse is initiated by CE1# (refer to CE1#
Controlled Write timing), or cycle time of the previous operation
cycle is satisfied, OE stays during Write cycle.
Am49LV128BM
55
POWER DOWN
Power Down
The Power Down is to enter low power idle state when
CE2 stays Low. The pSRAM has two power down
modes, Deep Sleep and 8M Partial. These can be programmed by series of read/write operation. See the
following table for mode features.
Mode
Sleep
(default)
8M Partial
Data Retention
Retention Address
No
N/A
8M bit
00000h to 7FFFFh
The default state is Sleep and it is the lowest power
consumption but all data will be lost once CE2 is
brought to Low for Power Down. It is not required to
program to Sleep mode after power-up.
Power Down Program Sequence
The program requires total 6 read/write operation with
unique address and data. Between each read/write
operation requires that device be in standby mode.
The following table shows the detail sequence.
Cycle# Operation
1st
Read
2nd
Write
3rd
Write
4th
Write
56
Address
1FFFFFh (MSB)
1FFFFFh
1FFFFFh
1FFFFFh
Data
Read Data (RDa)
RDa
RDa
Don’t Care (X)
Cycle# Operation
5th
Write
6th
Read
Address
1FFFFFh
Address Key
Data
X
Read Data (RDb)
The first cycle is to read from most significant address
(MSB). The second and third cycle are to write back
the data (RDa) read by first cycle. If the second or third
cycle is written into the different address, the program
is cancelled and the data written by the second or third
cycle is valid as a normal write operation. The fourth
and fifth cycle is to write to MSB. The data of fourth
and fifth cycle is don’t care. If the fourth or fifth cycle is
written into different address, the program is also cancelled but write data may not be wrote as normal write
operation. The last cycle is to read from specific address key for mode selection. Once this program sequence is performed from a Partial mode, the write
data may be lost. So, it should perform this program
prior to regular read/write operation if Partial mode is
used.
Address Key
The address key has the following format.
Mode
Sleep (default)
8M Partial
Am49LV128BM
A20
1
1
Address
A19
A18-A0
1
1
0
1
Binary
1FFFFFh
17FFFFh
June 17, 2004
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VDD
VSS
Min.
2.7
0
VIH
0.8 VDD
Low Level Input Voltage
VIH
VIL
Ambient Temperature
TA
Supply Voltage
High Level Input Voltage
Unit
V
V
0.8 VDD
-0.3
Max.
3.1
0
VDD + 0.2 and
≤+3.6
VDD + 0.2
0.2 VDD
–25
85
°C
V
V
V
Notes:
1.
Maximum DC voltage on input and I/O pins are VDD + 0.2 V. During voltage transitions, inputs may positive overshoot to VDD + 1.0 V for periods of up
to 5 ns.
2.
Minimum DC voltage on input or I/O pins are -0.3 V. During voltage transitions, inputs may negative overshoot VSS to -1.0 V for periods of up to
5 ns.
June 17, 2004
Am49LV128BM
57
PSRAM DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Input Leakage
Current
ILI
VIN = VSS to VDD
-1.0
+1.0
µA
Output Leakage
Current
ILO
VOUT = VSS to VDD, Output Disable
-1.0
+1.0
µA
Output High
Voltage Level
VOH
VDD = VDD(min), IOH = –0.5mA
2.4
–
V
Output Low
Voltage Level
VOL
IOL = 1 mA
–
0.4
V
SLEEP
–
10
µA
8M Partial
–
50
µA
VDD Power Down
Current
VDD Standby
Current
VDD Active
Current
IDDPS
IDDP8
IDDS
VDD = VDD max., VIN = VIH or VIL, CE1#
–
1.5
mA
IDDS1
VDD = VDD max., VIN ≤ 0.2 V or VIN ≥ VDD – 0.2 V,
CE1# =CE2 ≥ VDD – 0.2V
–
80
µA
tRC/tWC =
minimum
–
30
mA
tRC/tWC = 1 µs
–
3
mA
VDD = VDD max., VIN = VIH or VIL, CE1# = VIL and CE2
= VIH, IOUT = 0 mA, tPRC = min.
–
10
mA
IDDA1
IDDA2
VDD Page Read
Current
VDD = VDD max., VIN = VIH or VIL,
CE2 ≤ 0.2V
IDDA3
VDD = VDD max., VIN = VIH or VIL,
CE1# = VIL and CE2 = VIH,
IOUT = 0 mA
Notes:
1. All voltages are referenced to VSS.
2. DC Characteristics are measured after following POWER-UP timing.
3. IOUT depends on the output load conditions.
58
Am49LV128BM
June 17, 2004
PSRAM AC CHARACTERISTICS
Read Operation
Value
Parameter
Read Cycle Time (Notes 1, 2)
CE1# Access Time (Note 3)
OE# Access Time (Note 3)
Address Access Time (Notes 3,5)
LB#/UB# Access Time (Note 3)
Page Address Access Time (Notes 3,6)
Page Read Cycle Time (Notes 1,6,7)
Output Data Hold Time (Note 3)
CE1# Low to Output Low-Z (Note 4)
OE# Low to Output Low-Z (Note 4)
LB#/UB# Low to Output High-Z (Note 4)
CE1# High to Output High-Z (Note 3)
OE# High to Output High-Z (Note 3)
LB#/UB# High to Output High-Z (Note 3)
Address Setup Time to CE1# Low
Address Setup Time to OE# Low
Address Invalid Time (Notes 5,8)
Address Hold Time from CE1# High (Note 9)
Address Hold Time from OE# High
CE1# High Pulse Width
Symbol
tRC
tCE
tOE
tAA
tBA
tPAA
tPRC
tOH
tCLZ
tOLZ
tBLZ
tCHZ
tOHZ
tBHZ
tASC
tASO
tAX
tCHAH
tOHAH
tCP
Notes:
1. Maximum value is applicable if CE1# is kept at Low
without change of address input of A3 to A20.
2.
3.
4.
5.
Address should not be changed within minimum tRC.
The output load 50pF.
The output load 5pF.
Applicable to A3 to A20 when CE1# is kept at Low.
June 17, 2004
Min.
65
–
–
–
–
–
25
5
5
0
0
–
–
–
-5
10
–
-5
-5
12
Max.
1000
65
40
65
30
20
1000
–
–
–
–
20
20
20
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6. Applicable only to A0, A1 and A2 when CE1# is kept at Low
for the page address access.
7. In case Page Read Cycle is continued with keeping CE1#
stays Low, CE1# must be brought to High within 4 µs. In
other words, Page Read Cycle must be closed within 4 µs.
8. Applicable when at least two of address inputs among
applicable are switched from previous state.
9. tRC (min) and tPRC (min) must be satisfied.
Am49LV128BM
59
PSRAM AC CHARACTERISTICS
Write Operation
Value
Parameter
Write Cycle Time (Notes 1, 2)
Address Setup Time (Note 3)
CE1# Write Pulse Width (Note 3)
WE# Write Pulse Width (Note 3)
LB#/UB# Write Pulse Width (Note 3)
LB#/UB# Byte Mask Setup Time (Note 4)
LB#/UB# Byte Mask Hold Time (Note 5)
CE1# Write Recovery Time (Note 6)
WE# Write Recovery Time (Note 6)
LB#/UB# Write Recovery Time (Note 6)
Data Setup Time
Data Hold Time
OE# High to CE1# Low Setup Time for Write (Note 7)
OE# High to Address Setup Time for Write (Note 8)
WE#/UB#/LB# High to OE# Low Setup Time for Read (Note 10)
LB# and UB# Write Pulse Overlap
CE1# High Pulse Width
Address Hold Time for Write End (Note 3)
Notes:
1. Maximum value is applicable if CE1# is kept at Low
without any address change.
2. Minimum value must be equal or greater than the sum of
write pulse (tCW, TWP, TBW) and write recovery time (tWCR,
TWR or tBR).
3. Write pulse is defined from High to Low transition of CE1#,
WE#, or LB#/UB#, whichever occurs last.
4. Applicable for byte mask only. Byte mask setup time is
defined to the High to Low transition of CE1# or WE#
whichever occurs last.
5. Applicable for byte mask only. Byte mask hold time is
defined from the Low to High transition of CE1# or WE#
whichever occurs first.
6. Write recovery is defined from Low to High transition of
CE1#, WE#, or LB#/UB#, whichever occurs first.
60
Symbol
tWC
tAS
tCW
tWP
tBW
tBS
tBH
tWRC
tWR
tBR
tDS
tDH
tOHCL
tOES
tWHOL
tBWO
tCP
tAH
Min.
65
0
40
40
40
-5
-5
12
7.5
12
12
0
-5
0
12
30
12
0
Max.
1000
–
–
–
–
–
–
–
1000
1000
–
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
ns
ns
ns
7. If OE# is Low after minimum tOHCL, read cycle is initiated. In
other words, OE# must be brought to High within 5 ns after
CE1# is brought to Low. Once read cycle is initiated, new
write pulse should be input after minimum tRC is met
8. If OE# is Low after new address input, read cycle is
initiated. In other words, OE# must be brought to High at
the same time or before new address valid. Once read
cycle is initiated, new write pulse should be input after
minimum tRC is met and data bus is in High-Z
9. Absolute minimum values and defined at minimum VIH
level.
10. If the actual value of tWHOL is shorter than the specified
minimum values, the actual tAA of following Read may
become longer by the amount of subtracting the actual
value from the specified minimum value.
Am49LV128BM
June 17, 2004
AC CHARACTERISTICS
Power Down Parameters
Value
Parameter
CE2 Low Setup Time for Power Down Entry
CE2 Low Hold Time after Power Down Entry
CE1# High Hold Time following CE2 High after Power Down Exit
(SLEEP mode only) (Note 1)
CE1# High Hold Time following CE2 High after Power Down Exit
(not in SLEEP mode) (Note 2)
CE1# High Setup Time following CE2 High after Power Down Exit (Note 1)
Notes:
1. Applicable also to power up.
Symbol
tCSP
tC2LP
Min.
10
65
Max.
–
–
Unit
ns
ns
tCHH
300
–
µs
tCHHP
1
–
µs
tCHS
0
–
ns
2. Applicable when 8M Partial mode is programmed.
Other Timing Parameters
Value
Parameter
CE#1 High to OE# Invalid Time for Standby Entry
CE#1 High to WE# Invalid Time for Standby Entry (Note 1)
CE2 Low Hold Time after Power up
CE1# High Hold Time following CE2 High after Power up
Input Transition Time (Note 2)
Notes:
1. Some data might be written into any address location if
tCHWX (min) is not satisfied
June 17, 2004
Symbol
tCHOX
tCHWX
tC2LH
tCHH
tT
Min.
10
10
50
300
1
Max.
–
–
25
Unit
ns
ns
µs
µs
ns
2. The Input Transition Time (tT) at AC testing is 5ns, as
shown in AC Test Conditions below... If actual tT is longer
than 5ns, it may violate AC specification of some timing
parameters.
Am49LV128BM
61
AC CHARACTERISTICS
AC Test Conditions
Symbol
VIH
VIL
VREF
tT
Description
Input High Level
Input Low Level
Input Timing Measurement Level
Input Transition Time
Test Setup
15, 11
VDD * 0.8
VDD * 0.2
VDD * 0.5
5
Between VIL and VIH
Unit
V
V
V
ns
VDD
0.1 F
DEVICE
UNDER
TEST
VSS
Figure 26.
62
OUT
50pF
AC Measurement Output Load Circuit
Am49LV128BM
June 17, 2004
TIMING DIAGRAMS
tRC
ADDRESS VALID
ADDRESS
tASC
tCHAH
tCE
CE1#
tASC
tCP
tCHZ
tOE
OE#
tOHZ
tBA
LB / UB#
tBHZ
tBLZ
tOLZ
DQ
(Output)
tOH
tCLZ
VALID DATA OUTPUT
Note: CE2 and WE# must be High for entire read cycle.
Figure 27.
June 17, 2004
Read TIming #1 (Basic Timing)
Am49LV128BM
63
tAx
tRC
ADDRESS
ADDRESS VALID
ADDRESS VALID
tAA
CE1#
tRC
tAA
tOHAH
Low
tASO
tOE
OE#
LB / UB#
tOHZ
tOLZ
tOH
tOH
DQ
(Output)
VALID DATA OUTPUT
VALID DATA OUTPUT
Note: CE2 and WE# must be High for entire read cycle.
Figure 28.
64
Read Timing #2 (OE# and Address Access)
Am49LV128BM
June 17, 2004
TIMING DIAGRAMS
tAX
tRC
ADDRESS
tAx
ADDRESS VALID
tAA
CE1#,OE#
Low
tBA
tBA
LB#
tBA
UB#
tBHZ
tBHZ
tOH
tBLZ
tBLZ
tOH
DQ0-DQ7
(Output)
VALID DATA
OUTPUT
VALID DATA
OUTPUT
tBLZ
tBHZ
tOH
DQ8-DQ15
(Output)
VALID DATA OUTPUT
Note: CE2 and WE# must be High for entire read cycle.
Figure 29.
Read Timing #3 (LB#/UB# Byte Access)
tRC
ADDRESS
(A20-A3)
ADDRESS VALID
tRC
ADDRESS
(A2-A0)
ADDRESS VALID
tASC
tPRC
tPRC
ADDRESS
VALID
ADDRESS
VALID
tPAA
tPRC
ADDRESS
VALID
tPAA
tPAA
tCHAH
CE1#
tCE
tCHZ
OE#
LB# / UB#
tCLZ
tOH
tOH
tOH
tOH
DQ
(Output)
VALID DATA OUTPUT
(Normal Access)
VALID DATA OUTPUT
(Page Access)
Note:CE2 and WE# must be High for entire read cycle.
Figure 30.
June 17, 2004
Read Timing #4 (Page Access after CE1# Control Access)
Am49LV128BM
65
TIMING DIAGRAMS
tRC
ADDRESS
(A20-A3)
tRC
ADDRESS
(A2-A0)
tRC
tPRC
ADDRESS
VALID
ADDRESS
VALID
tPRC
ADDRESS
VALID
tPAA
tAA
tAx
ADDRESS VALID
ADDRESS VALID
tRC
CE1#
tAX
ADDRESS
VALID
tAA
tPAA
Low
tASO
tOE
OE#
tBA
LB# / UB#
DQ
(Output)
tOLZ
tBLZ
tOH
tOH
VALID DATA OUTPUT
(Normal Access)
tOH
tOH
VALID DATA OUTPUT
(Page Access)
Note: CE2 and WE# must be High for entire read cycle. Either or both LB# and UB# must be Low when both CE1# and OE# are
Low.
Figure 31.
66
Read Timing #5 (Random and Page Address Access)
Am49LV128BM
June 17, 2004
TIMING DIAGRAMS
tWC
ADDRESS
ADDRESS VALID
tAS
tAH
tCW
tAS
CE1#
tAS
tWR
tWP
WE#
tAS
tAS
tBR
tBW
LB #, UB#
tAS
tOHCL
OE#
tDS
tDH
DQ
(Input)
VALID DATA INPUT
Note: CE2 must be High for Write Cycle.
Figure 32.
Write Timing #1 (Basic Timing)
tWC
tWC
ADDRESS VALID
ADDRESS VALID
ADDRESS
tOHAH
CE1#
Low
tAS
tWP
tAH
tAS
tWP
tWR
WE#
tWR
LB#, UB#
tOES
OE#
tOHZ
tDS
tDH
tDS
tDH
DQ
(Input)
VALID DATA INPUT
VALID DATA INPUT
Note: CE2 must be High for Write Cycle.
Figure 33.
June 17, 2004
Write Timing #2 (WE# Control)
Am49LV128BM
67
TIMING DIAGRAMS
tWC
ADDRESS VALID
ADDRESS VALID
ADDRESS
CE1#
tWC
Low
tWR
tWR
WE#
tAS
tBW
tBS
tBH
LB#
tBH
tBS
tAS
tBW
UB#
tDS
tDH
DQ0-DQ8
(Input)
VALID DATA INPUT
tDS
tDH
DQ8-DQ15
(Input)
VALID DATA INPUT
Note: CE2 must be High for Write Cycle.
Figure 34.
68
Write Timing #3-1 (WE#/LB#/UB# Byte Write Control)
Am49LV128BM
June 17, 2004
tWC
ADDRESS VALID
ADDRESS VALID
ADDRESS
CE1#
tWC
Low
tWR
t WR
WE#
tAS
tBW
tBS
tBH
LB#
tBH
tBS
tAS
tBW
UB#
tDS
tDH
DQ0-DQ7
(Input)
VALID DATA INPUT
tDS
tDH
DQ8-DQ15
(Input)
VALID DATA INPUT
Note: CE2 must be High for Write Cycle.
Figure 35.
June 17, 2004
Write Timing #3-2 (WE#/LB#/UB# Byte Write Control)
Am49LV128BM
69
TIMING DIAGRAMS
tWC
ADDRESS VALID
ADDRESS VALID
ADDRESS
CE1#
tWC
Low
WE#
tAS
tBW
tBR
tBS
tBH
LB#
tBS
tBH
tAS
tBW
tBR
UB#
tDS
tDH
DQ0-DQ7
(Input)
tDS
VALID DATA INPUT
tDH
DQ8-DQ15
(Input)
VALID DATA INPUT
Note: CE2 must be High for Write Cycle.
Figure 36.
Write Timing #3-3 (WE#/LB#/UB# Byte Write Control)
tWC
ADDRESS VALID
ADDRESS VALID
ADDRESS
CE1#
tWC
Low
WE#
tAS
tBW
tBR
tAS
tBW
tBR
LB#
tBWO
tDS
DQ0-DQ7
(Input)
tDH
tDS
VALID
DATA INPUT
tDH
VALID
DATA INPUT
tBWO
tAS
tBW
tBR
tAS
tBW
tBR
UB#
tDS
DQ8-DQ15
(Input)
tDH
VALID
DATA INPUT
tDS
tDH
VALID
DATA INPUT
Note: CE2 must be High for Write Cycle.
Figure 37.
70
Write Timing #3-4 (WE#/LB#/UB# Byte Write Control)
Am49LV128BM
June 17, 2004
TIMING DIAGRAMS
tWC
ADDRESS
tRC
WRITE ADDRESS
tCHAH
READ ADDRESS
tWRC
tAS
tASC
tCW
tCHAH
tCE
CE1#
tCP
tCP
WE#
UB#,LB#
tOHCL
OE#
tCHZ
tOH
tDS
tDH
tCLZ
tOH
DQ
READ DATA OUTPUT
WRITE DATA INPUT
Note: Write address is valid from either CE1# or WE# of last falling edge.
Figure 38.
Read/Write Timing #1-1 (CE1# Control)
tWC
ADDRESS
tRC
WRITE ADDRESS
tCHAH
tAS
READ ADDRESS
tWR
tASC
tCHAH
tCE
CE1#
tCP
tCP
tWP
WE#
UB#,LB#
tOHCL
tOE
OE#
tCHZ
tOH
tDS
tDH
tOLZ
tOH
DQ
READ DATA OUTPUT
WRITE DATA INPUT
READ DATA OUTPUT
Note: OE# can be fixed Low during write operation if it is CE1# controlled write at Read-Write-Read sequence.
Figure 39.
June 17, 2004
Read/Write Timing #1-2 (CE1#/WE#/OE# Control)
Am49LV128BM
71
TIMING DIAGRAMS
tWC
ADDRESS
tRC
WRITE ADDRESS
READ ADDRESS
tAA
tOHAH
CE1#
tOHAH
Low
tAS
tWR
tWP
WE#
tOES
UB#,LB#
tASO
tOE
OE#
tOHZ
tOHZ
tOH
tDS
tDH
tOLZ
tOH
DQ
READ DATA OUTPUT
READ DATA OUTPUT
WRITE DATA INPUT
Note: CE1# can be tied to Low for WE# and OE# controlled operation.
Figure 40.
Read/Write Timing #2 (OE#, WE# Control)
tWC
ADDRESS
tRC
WRITE ADDRESS
READ ADDRESS
tAA
tOHAH
CE1#
tOHAH
Low
WE#
tOES
tAS
tBW
tBR
tBA
UB#,LB#
tASO
tBHZ
OE#
tBHZ
tOH
tDS
tDH
tBLZ
tOH
DQ
READ DATA OUTPUT
WRITE DATA INPUT
READ DATA OUTPUT
Note: CE#1 can be tied to Low for WE# and OE# controlled operation.
Figure 41.
72
Read/Write Timing #3 (OE#, WE#, LB#, UB# Control)
Am49LV128BM
June 17, 2004
TIMING DIAGRAMS
CE1#
tCHS
tC2LH
tCHH
CE2
VDD
VDD min
0V
Note: The tC2LH specifies after VDD reaches specified minimum level.
Figure 42.
Power-up Timing #1
CE1#
tCHH
CE2
VDD
VDD min
0V
Note: The tCHH specifies after VDD reaches specified minimum level and applicable to both CE1# and CE2.
Figure 43.
June 17, 2004
Power-up Timing #2
Am49LV128BM
73
TIMING DIAGRAMS
CE1#
tCHS
CE2
tCSP
tC2LP
tCHH (tCHHP )
High-Z
DQ
Power Down Entry
Power Down Mode
Power Down Exit
Note: This Power Down mode can be also used as a reset timing if Power-up timing above could not be satisfied and PowerDown program was not performed prior to this reset.
Figure 44.
Power-down Entry and Exit Timing
CE1#
tCHOX
tCHWX
OE#
WE#
Active (Read)
Standby
Active (Write)
Standby
Note: Both tCHOX and tCHWX define the earliest entry timing for Standby mode. If either of timing is not satisfied, it takes tRC (min)
period for standby mode from CE1# Low to High transition.
Figure 45.
74
Standby Entry Timing after Read or Write
Am49LV128BM
June 17, 2004
TIMING DIAGRAMS
ADDRESS
tRC
tWC
tWC
MSB*1
MSB*1
MSB*1
tCP
tCP
tWC
tWC
MSB*1
tCP
tRC
MSB*1
tCP
Key*2
tCP
tCP*3
CE1#
OE#
WE#
LB#,UB#
DQ*3
RDa
Cycle #1
RDa
Cycle #2
RDa
Cycle #3
X
Cycle #4
X
Cycle #5
RDb
Cycle #6
Notes:
1.
The all address inputs must be High from Cycle #1 to #5.
2.
After tCP following Cycle #6, the Power Down Program is completed and returned to the normal operation.
June 17, 2004
Am49LV128BM
75
AM49LV128BM MCP WITH SECOND PSRAM SUPPLIER
PSRAM BLOCK DIAGRAM
Note: ZZ# = CE2pS on MCP pin-out.
FUNCTION TRUTH TABLE
Mode
Standby (Note 2)
Standby (Note 2)
Write
Read
Active
Deep Sleep
CE#
H
X
L
L
L
X
ZZ#
H
H
H
H
H
L
WE#
X
X
L
H
H
X
OE#
UB#
LB#
X
X
X
X
H
H
X (Note 3) L (Note 1) L (Note 1)
L
L (Note 1) L (Note 1)
H
L
L
X
X
X
I/O0 - I/O15 (Note1)
High-Z
High-Z
Data In
Data Out
High-Z
High-Z
POWER
Standby
Standby
Active
Active
Active
Deep Sleep
Note:
1.
When UB# and LB# are in select mode (low), I/O 0 - I/O15 are
affected as shown. When LB# only is in the select mode only I/O0 - I/
O7 are affected as shown. When UB# is in the select mode only I/O8
- I/O15 are affected as shown.
2.
When the device is in standby mode, control inputs (WE#, OE#,
UB#, and LB#), address inputs and data input/outputs are
internally isolated from any external influence and disabled from
exerting any influence externally.
3.
When WE# is invoked, the OE# input is internally disabled and
has no effect on the circuit.
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
Item
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
VIN,OUT
VCC
PD
TSTG
TA
Rating
–0.2 to VCC+0.3
–0.2 to 3.6
1
–40 to 125
-25 to +85
Unit
V
V
W
oC
oC
Note:
1.
76
Stresses greater than those listed above may cause permanent
damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those
indicated in the operating section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Am49LV128BM
June 17, 2004
OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE)
Item
Symbol
Supply Voltage
VCC
Supply Voltage for I/O
VCCQ
Input High Voltage
VIH
Input Low Voltage
VIL
Output High Voltage
VOH
Output Low Voltage
VOL
Input Leakage Current
ILI
Output Leakage Current
ILO
Read/Write Operating Supply Current
ICC1
@1 µs Cycle Time (Note 2)
Read/Write Operating Supply Current
ICC2
@65 ns Cycle Time (Note 2)
Page Mode Operating Supply Current
ICC2
@65 ns Cycle Time (Note 2)
Maximum Standby Current (Note 3)
ISB1
Test Condition
IOH = 0.5mA
IOL = -0.5mA
VIN = 0 to VCC
OE# = VIH or Chip Disabled
VCC= 3.1V, VIN=CMOS
levelsChip Enabled, IOUT = 0
VCC= 3.1V, VIN=CMOS levels
Chip Enabled, IOUT = 0
VCC= 3.1V, VIN=CMOS levels
Chip Enabled, IOUT = 0
VCC= 3.1V, VIN=CMOS levels
Chip Disabled
Typ
Min
(Note 1)
2.7
3.0
2.7
3.0
0.8VCCQ
-0.2
0.8VCCQ
-1
-1
80
Max
3.1
VCC
VCCQ+0.2
0.2VCCQ
0.2VCCQ
1
1
Unit
V
V
V
V
V
V
µA
µA
3.0
mA
25.0
mA
25.0
mA
120
µA
Note:
1.
Typical values are measured at Vcc=Vcc Typ., TA=25°C and not
100% tested.
2.
This parameter is specified with the outputs disabled to avoid
external loading effects. The user must add current required to
drive output capacitance expected in the actual system.
June 17, 2004
3.
This device assumes a standby mode if the chip is disabled
(either CE# high or both UB# and LB# high). In order to achieve
low standby current all inputs must be within 0.2V of either VCC
or VSS.
Am49LV128BM
77
OUTPUT LOAD CIRCUIT
78
Am49LV128BM
June 17, 2004
TIMING
65ns
Item
Read Cycle Time
Address Access Time
Page Mode Read Cycle Time
Page Mode Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Symbol
tRC
tAA
tPC
tPA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
Min.
65
Write Cycle Time
Page Mode Write Cycle Time
Page Mode CE Precharge
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Write Precharge Time
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Page Mode Data to Write Time Overlap
Data Hold from Write Time
Page Mode Data Hold from Write Time
End Write to Low-Z Output
tWC
tPWC
tCP
tCW
tAW
tLBW, tUBW
tWP
tWEH
tAS
tWR
tWHZ
tDW
tPDW
tDH
tPDH
tOW
65
25
10
55
55
55
50
7.5
0
0
Maximum Page Mode Cycle
tPGMAX
June 17, 2004
25
10
5
10
0
0
0
5
Max.
65
20000
25
65
20
65
5
5
5
20000
20000
5
25
20
0
0
5
Am49LV128BM
20000
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
79
TIMING OF READ CYCLE (CE# = OE# = VIL, WE# = VIH)
80
Am49LV128BM
June 17, 2004
TIMING WAVEFORM OF READ CYCLE (WE#=VIH)
Address
CE#
OE#
LB#,UB#
Data Out
June 17, 2004
Am49LV128BM
81
TIMING WAVEFORM OF PAGE MODE READ CYCLE (WE# = VIH)
82
Am49LV128BM
June 17, 2004
TIMING WAVEFORM OF WRITE CYCLE (WE# CONTROL)
June 17, 2004
Am49LV128BM
83
TIMING WAVEFORM OF WRITE CYCLE (CE# CONTROL)
84
Am49LV128BM
June 17, 2004
TIMING WAVEFORM FOR SUCCESSIVE WE# WRITE CYCLES
June 17, 2004
Am49LV128BM
85
TIMING WAVEFORM OF PAGE MODE WRITE CYCLE
POWER SAVINGS MODES
mains active until the register is updated. To return to
the full 32Mb address space, the VA register must be
reset using the previously defined procedures.
The PSRAM has three power savings modes:
„ Reduced Memory Size
Partial Array Refresh (PAR)
„ Partial Array Refresh
„ Deep Sleep Mode
The operation of the power saving modes is controlled
by setting the Variable Address Register (VAR). This
VAR is used to enable/disable the various low power
modes.
The VAR is set by using the timings. The register must
be set in less then 1µs after ZZ# is enabled low.
Reduced Memory Size (RMS)
In this mode of operation, the 32Mb PSRAM can be
operated as a 8Mb, 16Mb or a 24Mb device. The
mode and array size are determined by the settings in
the VA register. The VA register is set according to the
timings and the bit settings. The RMS mode is enabled
at the time of ZZ# transitioning high and the mode re-
86
In this mode, the internal refresh operation can be restricted to a 8Mb, 16Mb or 24Mb portion of the array.
The mode and array partition to be refreshed are determined by the settings in the VAR register. The VAR
register is set according to the timings and the bit settings. In this mode, when ZZ# is taken low, only the
portion of the array that is set in the register is refreshed. The operating mode is only available during
standby time and once ZZ# is returned high, the device resumes full array refresh. All future PAR cycles
will use the contents of the VA register. To change the
address space of the PAR mode, the VA register must
be reset using the previously defined procedures.
The default state for the ZZ# register will be such that
ZZ# low will put the device into PAR mode after 1µs
and never initiate a deep sleep mode unless appropri-
Am49LV128BM
June 17, 2004
ate register is updated. This device is referred to as
Deep Sleep Inactive, or DSI device. In either device,
once the SRAM enters Deep Sleep Mode, the VAR
contents are destroyed and the default register settings are reset.
June 17, 2004
Deep Sleep Mode
In this mode of operation, the internal refresh is turned
off and all data integrity of the array is lost. Deep Sleep
is entered by bringing ZZ# low. After 1 µs, if the VAR
register corresponding to A4 is not set to Deep Sleep
Disabled, the device will enter Deep Sleep Mode. The
device will remain in this mode as long as ZZ# remains low.
Am49LV128BM
87
VARIABLE ADDRESS REGISTER
88
Am49LV128BM
June 17, 2004
VARIABLE ADDRESS REGISTER (VAR) UPDATE TIMINGS
June 17, 2004
Am49LV128BM
89
DEEP SLEEP MODE - ENTRY/EXIT TIMINGS
VAR UPDATE AND DEEP SLEEP TIMINGS
Item
PAR and RMS ZZ# low to WE# low
Chip (CE#, UB#/LB#) deselect to ZZ# low
Deep Sleep Mode
Deep Sleep Recovery
90
Symbol
tzzwe
tcdzz
tzzmin
tr
Min
0
10
200
Am49LV128BM
Max
1000
Unit
ns
ns
ns
ns
June 17, 2004
ADDRESS PATTERNS FOR PAR (A3 = 0, A4 = 1)
A2
0
0
x
1
1
A1
1
1
0
1
1
June 17, 2004
A0
1
0
0
1
0
Active Section
One-quarter of die
One-half of die
Full Die
One-quarter of die
One-half of die
Address Space
Size
000000h - 07FFFFh 512Kb x 16
000000h - 0FFFFFh 1Mb x 16
000000h-1FFFFFh
2Mbx16
180000h - 1FFFFFh 512Kb x 16
100000h - 1FFFFFh 1Mb x 16
Am49LV128BM
Density
8Mb
16Mb
32Mb
8Mb
16Mb
91
ADDRESS PATTERNS FOR RMS (A3 = 1, A4 = 1)
A2
0
0
X
1
1
92
A1
1
1
0
1
1
A0
1
0
0
1
0
Active Section
One-quarter of die
One-half of die
Full die
One-quarter of die
One-half of die
Address Space
Size
000000h - 07FFFFh 512Kb x 16
000000h - 0FFFFFh 1Mb x 16
000000h - 1FFFFFh 2Mb x 16
180000h - 1FFFFFh 512Kb x 16
100000h - 1FFFFFh 1Mb x 16
Am49LV128BM
Density
8Mb
16Mb
32Mb
8Mb
16Mb
June 17, 2004
LOW POWER ICC CHARACTERISTICS FOR PSRAM
Item
Symbol
Test
PAR Mode Standby
Current
IPAR
VIN = VCC or 0V,
Chip Disabled, tA= 85°C
RMS Mode Standby
Current
IRMSSB
VIN = VCC or 0V,
Chip Disabled, tA= 85°C
Deep Sleep Current
IZZ
June 17, 2004
VIN = VCC or 0V,
Chip in ZZ# mode, tA= 85°C
Am49LV128BM
Array Partition
1/4 Array
1/2 Array
8Mb Device
16Mb Device
Typ
50
70
50
70
Max
75
90
75
90
Unit
7
10
µA
µA
µA
93
PHYSICAL DIMENSIONS
TLD064–64-Ball Fine-pitch Ball Grid Array
D1
A
D
eD
0.15 C
(2X)
10
9
SE 7
8
7
6
E
E1
5
4
eE
3
2
1
M L K J
INDEX MARK
PIN A1
CORNER
B
10
TOP VIEW
H G F
E D C
B A
7
SD
0.15 C
PIN A1
CORNER
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
b
64X
0.15
0.08
M C A B
M C
NOTES:
PACKAGE
TLD 064
JEDEC
N/A
DxE
12.00 mm x 9.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.20
A1
0.10
---
---
A2
0.81
---
0.97
NOTE
e REPRESENTS THE SOLDER BALL GRID PITCH.
BODY THICKNESS
9.00 BSC.
BODY SIZE
8.80 BSC.
MATRIX FOOTPRINT
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
E1
7.20 BSC.
MD
12
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
eE
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
E
---
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
5.
D1
MATRIX FOOTPRINT
64
2.
BALL HEIGHT
BODY SIZE
0.35
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
4.
12.00 BSC.
n
1.
PROFILE
D
φb
0.08 C
SIDE VIEW
6
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.45
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
0.80 BSC.
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
A2,A3,A4,A5,A6,A7,A8,A9
DEPOPULATED SOLDER BALLS
B1,B2,B3,B4,B7,B8,B9,B10
C1,C2,C9,C10,D1,D10,E1,E10
F1,F5,F6,F10,G1,G5,G6,G10
H1,H10,J1,J10,K1,K2,K9,K10
L1,L2,L3,L4,L7,L8,L9,L10
M2,M3,M4,M5,M6,M7,M8,M9
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3309 \ 16-038.22a
94
Am49LV128BM
June 17, 2004
REVISION SUMMARY
Revision A (January 22, 2004)
Revision A+4 (March 4, 2004)
Initial release.
Lookahead Diagram
Added the lookahead diagram.
Revision A+1 (January 29, 2004)
Connection Diagrams
Revision A+5 (March 15, 2004)
Corrected signal designation on ball H8.
Global
AC Characteristics (Flash)
Changed DQ designations to 0-7 and 8-15.
Read-only Operations: Added Figure 14.
Global
pSRAM AC Characteristics
Removed references to the 4M Partial power down
mode and added references to Deep Sleep.
Figure 32, Write Timing #1 (Basic Timing): Renamed
tWRC to tAH; extended tWR to where WE# returns low;
extended tBR to where LB#, UB# goes low.
Figure 33, Write Timing #2 (WE# Control): The period
along WE# formerly labeled tWR is now tAH. A new tWR
period has been added which extends from WE#
going high after the first tWP period to where the second tWP period begins.
Figure 34, Write Timing #3-1 (WE#/LB#/UB# Byte
Write Control): tWR has been extended to where WE#
returns low.
Figure 35, Write Timing #3-2 (WE#/LB#/UB# Byte
Write Control): tWR has been extended to where WE#
returns low.
Write Operations table: Changed minimum specification for tWR from 12 to 7.5 ns. Added tAH specification.
Revision A+2 (February 16, 2004)
Recommended Operating Conditions
Corrected Min. and Max values for VIH parameter.
PSRAM AC Characteristics
Write Operation
Changed column head to Value, added tWHOL parameter, changed min value of t BWO to 30, and added
Notes 8, 9, and 10.
AC Characteristics
Added Power Down Parameters and Other Timing Parameters tables.
AM49LV128BM MCP with Second PSRAM Supplier
Removed Capacitance section.
Partial Array Refresh (PAR)
Removed reference to two versions.
Revision A6 (June 17, 2004)
PSRAM Features
“Absolute Maximum Ratings” on page 37
Feature list was corrected to four main features
Lookahead Pinout Diagram
Changed “Voltage on VCC Supply relative to VSS Rating” To -0.2 to 3.6.
Figure was removed and replaced by TBD.
Changed “Power Dissipation - Rating” to 1.
Ordering Information
Changed “Operating Temperature - Rating” to -25 to
+85.
Added and option that designates standard or second
supplier for PSRAM.
AM49LV128BM MCP with Second Supplier
Section added.
Changed “PAR Mode Standby Current” - Type to “50”
and Max to “75”.
Revision A+3 (February 25, 2004)
Changed “RMS Mode Standby Current - 8Mb Device”
- Type to “50” and Max to “75”.
Operating Ranges
Removed VIO from the list of supply voltages.
AM49LVxxxBM MCP with Second Supplier PSRAM
Block Diagram
Added a note clarifying ZZ#.
“Low Power ICC Characteristics for PSRAM” on
page 93
Changed “RMS Mode Standby Current - 16Mb Device” - Type to “70” and Max to “90”.
Changed “Deep Sleep Current” -Type to “7”.
“Address Patterns for RMS (A3 = 1, A4 = 1)” on
page 92
Deleted “Three-quarters of die from table.
June 17, 2004
Am49LV128BM
95
Deleted “Full Die” from table.
“Address Patterns for PAR (A3 = 0, A4 = 1)” on
page 91
Changed “Output Low Voltage - Test Condition”
to...=0.5mA.hanged “Output Low Voltage - Max.” to
0.2VccQ.
Added “Full Die” to table.
Changed “Input Leakage Current - Min.” to -1.
“Timing” on page 79
Changed “Input Leakage Current - Max.” to 1.
Changed “Chip Disable to High-Z Output - Max” to 5.
Changed “Output Leakage Current - Min.” to -1
Changed “Output Disable to High-Z Output - Max” to
5.
Changed “Output Leakage Current - Max.” to 1.
Changed “Byte Select Disable to High-Z Output - Max”
to 5.
Changed “Read/Write Operating Supply Current
@1...-Test Condition” to Vcc=3.1V...
Changed “Write to High-Z Output - Max” to 5.
Changed “Read/Write Operating Supply Current
@65...-Test Condition” to Vcc=3.1V...
“Operating Characteristics (Over Specified
Temperature Range)” on page 77
Changed “Page Mode Operating Supply Current. Test Condition” to Vcc=3.1V...
Changed “Supply Voltage for I/O - Min” to 7.7.
Changed “Page Mode Operating Supply Current. Max.” to 25.0
Changed “Input High Voltage - Min” to 0.8.
Changed “Maximum Standby Current - Test Condition”
to Vcc=3.1V...
Changed “Output High Voltage - Max” to 0.2.
Changed “Maximum Standby Current - Max.” to 120.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable ( i.e., submersible repeater and artificial satellite). Please note that FASL will not be liable to you
and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices
have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures
into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior
authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2003–2004 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
96
Am49LV128BM
June 17, 2004