STMICROELECTRONICS 2STC4468

2STC4468
High power NPN epitaxial planar bipolar transistor
General features
Preliminary data
■
High breakdown voltage VCEO=140V
■
Complementary to 2STA1695
■
Fast-switching speed
■
Typical ft =20MHz
■
Fully characterized at 125 oC
3
2
Applications
■
1
Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows
good
gain
linearity
behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number
Marking
Package
Packaging
2STC4468
2STC4468
TO-3P
Tube
Electrical ratings
June 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
9
2STC4468
Table 1.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-emitter voltage (IE = 0)
200
V
VCEO
Collector-emitter voltage (IB = 0)
140
V
VEBO
Collector-base voltage (IC = 0)
6
V
Collector current
10
A
Collector peak current (tP < 5ms)
20
A
PTOT
Total dissipation at Tc = 25°C
100
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
1.25
°C/W
IC
ICM
TJ
Table 2.
Symbol
Rthj-case
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Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
______________ __max
2STC4468
1
Electrical characteristics
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6V
0.1
µA
Collector-emitter breakdown
V(BR)CEO(1) voltage (I = 0)
B
V(BR)CBO
Collector-emitter breakdown
voltage (IE = 0)
Collector-emitter breakdown
V(BR)EBO(1) voltage (I = 0)
C
IC = 50mA
140
V
IC = 100µA
200
V
6
V
IE = 1mA
Collector-emitter saturation
voltage
IC = 5A
IB = 500mA
IC = 7A
VBE
Base-emitter voltage
hFE
DC current gain
VCE(sat) (1)
fT
CCBO
IB = 700mA
0.5
0.7
V
V
VCE = 5V
IC = 5A
1.3
V
IC = 3A
VCE = 4V
70
IC = 5A
VCE = 4V
50
Transition frequency
IC = 0.5A
VCE = 12V
Collector-base capacitance
IE = 0
VCB = 10V f = 1MHz
140
20
MHz
150
pF
0.22
µs
4.3
µs
0.5
µs
Resistive Load
ton
Turn-on time
IC = 5A
tstg
Storage time
IB1 = -IB2 = 0.5A
toff
Fall time
Note: 1
VCC = 60V
Pulsed duration = 300 µs, duty cycle ≤1.5%
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2STC4468
Electrical characteristics
1.1
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Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Output characteristics
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter on voltage
Figure 6.
Collector current vs baseemitter voltage
2STC4468
Electrical characteristics
1.2
Test circuit
Figure 7.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
2
2STC4468
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2STC4468
Package mechanical data
TO-3P Mechanical Data
DIM.
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
L2
P
Q
Q1
MIN.
4.6
1.45
1.20
0.80
1.80
2.80
0.55
19.70
mm.
TYP
1.50
1.40
1
0.60
19.90
13.90
15.40
5.15
19.50
18.20
3.10
MAX.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
13.60
9.60
5.45
20
3.50
18.40
5.75
20.50
18.60
3.30
5
3.80
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2STC4468
Revision history
3
Revision history
Table 4.
8/9
Revision history
Date
Revision
21-May-2007
1
Changes
Initial EDOCS release
2STC4468
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