STMICROELECTRONICS 2STN2540-A

2STN2540-A
Low voltage fast-switching PNP power bipolar transistor
Features
■
The device is qualified for automotive
application
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast switching speed
■
Surface mounting device in medium power
SOT-223 package
4
1
2
3
SOT-223
Applications
■
Emergency lighting
■
LED
■
CCFL drivers (back lighting)
■
Voltage regulation
■
Relay driver
Figure 1.
Internal schematic diagram
Description
The device in a PNP transistor manufactured
using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Table 1.
Device summary
Order code
Marking
Package
Packaging
2STN2540-A
N2540
SOT-223
Tape & reel
January 2008
Rev 2
1/9
www.st.com
9
Electrical ratings
1
2STN2540-A
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Unit
VCBO
Collector-base voltage (IE = 0)
-40
V
VCEO
Collector-emitter voltage (IB = 0)
-40
V
VEBO
Emitter-base voltage (IC = 0)
-6
V
Collector current
-5
A
ICM
Collector peak current (tP < 5ms)
-10
A
IBM
Base peak current (tP < 5ms)
-2
A
Ptot
Total dissipation at Tamb = 25°C
1.6
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
78
°C/W
IC
TJ
Table 3.
Symbol
Max. operating junction temperature
Thermal data
Parameter
Rthj-amb(1) Thermal resistance junction-amb
1. Device mounted on PCB area of 1cm2
2/9
Value
__max
2STN2540-A
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -30 V
-0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -5 V
-0.1
µA
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = -0.5 A
IB = -5 mA
-80
-120
mV
IC = -1 A
IB = -10 mA
-120
-180
mV
IC = -2 A
IB = -200 mA
-140
-200
mV
IC = -5 A
IB = -500 mA
-350
-450
mV
VBE(sat) (1)
Base-emitter saturation
voltage
IC = -5 A
IB = -500 mA
-1.3
V
VBE(on) (1)
Base-emitter on voltage
VCE = -2 V
IC = -2 A
-1.25
V
hFE (1)
CCBO
ton
ts
tf
DC current gain
Collector-base
capacitance
Resistive load
Turn-on time
Storage time
Fall time
IC = -0.5 A
VCE = -2 V
250
IC = -1 A
VCE = -2 V
200
IC = -2 A
VCE = -2 V
150
IC = -5 A
VCE = -2 V
50
IE = 0
VCB = -10 V
80
pF
-IB1 = IB2 = -0.1 A
75
ns
Tp = 30 µA
426
ns
62
ns
f = 1MHz
IC = -1 A _
VCC = -10 V
1. Pulsed duration = 300 µs, duty cycle ≤1.5%
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Electrical characteristics
2.1
4/9
2STN2540-A
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
Base-emitter on voltage
Figure 7.
Resistive load switching
times
2STN2540-A
Electrical characteristics
Figure 8.
2.2
Resistive load switching
times
Figure 9.
Capacitance
Test circuit
Figure 10. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
3
2STN2540-A
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
6/9
2STN2540-A
Package mechanical data
Figure 11.
Package mechanical data
SOT-223 mechanical data
mm.
DIM.
min.
typ
A
max.
1.80
A1
0.02
0.1
B
0.60
0.70
0.85
B1
2.90
3.00
3.15
c
0.24
0.26
0.35
D
6.30
6.50
6.70
e
2.30
e1
4.60
E
3.30
3.50
3.70
H
6.70
7.00
7.30
V
10 o
0046067_L
7/9
Revision history
4
2STN2540-A
Revision history
Table 5.
8/9
Document revision history
Date
Revision
Changes
23-Oct-2007
1
Initial release
15-Jan-2008
2
Updated max package dimensions in lines “B” and “c” of the package
mechanical data, Figure 11.
2STN2540-A
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