STMICROELECTRONICS 2STW1695

2STW1695
High power PNP epitaxial planar bipolar transistor
General features
■
High breakdown voltage VCEO = -140V
■
Complementary to 2STW4468
■
Typical ft =20MHz
■
Fully characterized at 125 oC
■
In compliance with the 2002/93/EC European
Directive
3
2
1
Applications
■
TO-247
Audio power amplifier
Description
Internal schematic diagram
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows
good
gain
linearity
behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Order codes
Part Number
Marking
Package
Packing
2STW1695
2STW1695
TO-247
Tube
February 2007
Rev 3
1/9
www.st.com
9
2STW1695
Electrical ratings
Table 1.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-emitter voltage (IE = 0)
-140
V
VCEO
Collector-emitter voltage (IB = 0)
-140
V
VEBO
Collector-base voltage (IC = 0)
-6
V
Collector current
-10
A
Collector peak current (tP < 5ms)
-20
A
PTOT
Total dissipation at Tc = 25°C
100
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
1.25
°C/W
IC
ICM
TJ
Table 2.
Symbol
Rthj-case
2/9
Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
________________max
2STW1695
1
Electrical characteristics
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -140V
-0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -6V
-0.1
µA
Collector-emitter breakdown
V(BR)CEO(1) voltage (I = 0)
B
IC = -50mA
-140
V
Collector-emitter breakdown
voltage (IE = 0)
IC = -100µA
-140
V
-6
V
V(BR)CBO
Collector-emitter breakdown
V(BR)EBO(1) voltage (I = 0)
C
VCE(sat) (1)
VBE (1)
hFE
fT
CCBO
IE = -1mA
Collector-emitter saturation
voltage
IC = -5A
IB = -500mA
IC = -7A
Base-emitter voltage
IB = -700mA
-0.5
-0.7
V
V
VCE = -5V
IC = -5A
-1.3
V
IC = -3A
V CE = -4V
70
IC = -5A
V CE = -4V
50
Transition frequency
IC = -0.5A
V CE = -12V
20
MHz
Collector-base capacitance
IE = 0
VCB = -10V f = 1MHz
225
pF
0.24
µs
1.2
µs
0.24
µs
DC current gain
140
Resistive load
ton
Turn-on time
IC = -5A
tstg
Storage time
IB1 = -IB2 = -0.5A
toff
Fall time
V CC = -60V
Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%
3/9
2STW1695
Electrical characteristics
1.1
4/9
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Output characteristics
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter on voltage
Figure 6.
Collector current vs baseemitter voltage
2STW1695
Electrical characteristics
1.2
Test circuit
Figure 7.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Package mechanical data
2
2STW1695
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
6/9
2STW1695
Package mechanical data
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
15.9
0.602
G
H
10.9
15.3
0.429
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
L5
5.5
M
2
1.362
0.217
3
0.079
0.118
P025P
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2STW1695
Revision history
3
Revision history
Table 4.
8/9
Revision history
Date
Revision
Changes
23-Oct-2006
1
First release
09-Feb-2007
2
New graphics
20-Feb-2007
3
The device’s commercial code has been changed from preliminary to
full.
2STW1695
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