BD241BFP BD242BFP ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ 3 1 DESCRIPTION The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP. 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN BD241BFP PNP BD242BFP Unit V CEO Collector-Base Voltage (R BE = 100 Ω) Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 3 A Collector Peak Current 5 A Base Current 1 A V CER IC I CM IB P tot T stg Tj o Total Dissipation at T c ≤ 25 C Storage Temperature Max. Operating Junction Temperature 90 V 80 V 24 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. February 2001 1/4 BD241BFP / BD242BFP THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 5.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEO Collector Cut-off Current (I B = 0) V CE = 60 V 0.3 mA I CES Collector Cut-off Current (V BE = 0) V CE = 80 V 0.2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 30 mA 80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A I B = 0.6 A 1.2 V V BE(ON) ∗ Base-Emitter Voltage IC = 3 A V CE = 4 V 1.8 V DC Current Gain IC = 1 A IC = 3 A V CE = 4 V V CE = 4 V h FE* ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 25 10 BD241BFP / BD242BFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 3/4 BD241BFP / BD242BFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4