BFX34 MECHANICAL DATA Dimensions in mm (inches) HIGH CURRENT GENERAL PURPOSE TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION: The BFX34 is a silicon Epitaxial Planar NPN transistor in a TO-39 case, intended for high current applications. 6.10 (0.240) 6.60 (0.260) Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drive inverters. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 FEATURES 3 0.74 (0.029) 1.14 (0.045) • SILICON EPITAXIAL NPN TRANSISTOR 0.71 (0.028) 0.86 (0.034) • HIGH SPEED, LOW SATURATION SWITCH • CECC SCREENING OPTIONS 45° TO39 (TO-205AD) Package PIN1 – EMITTER Underside View PIN 2 – BASE PIN 3 – COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 120V VCEO Collector – Emitter Voltage (IB = 0) 60V VEBO Emitter – Base Voltage (IC = 0) 6V IC Continious Collector Current 2A ICM Peak Repetitive Collector Current 5A IB Continious Base Current 1A Ptot Total Device Dissipation @ TA ≤ 25°C 0.87W @ TC ≤ 25°C 5W TSTG Storage Temperature Range TJ Junction Temperature –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5569 Issue 1 BFX34 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current VCE = 60V VBE = 0 0.02 10 IEBO Emitter Cut-off Current VEB = 4V IC = 0 0.05 10 V(BR)CBO* Collector – Base Breakdown Voltage IC = 5mA IE = 0 120 VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 100mA IB = 0 60 VEBO* Emitter– Base Voltage IE = 1mA IC = 0 6 VCE(sat)* Collector – Emitter Saturation Voltage IC = 5A IB = 0.5A 0.4 1 VBE(sat)* Base – Emitter Saturation Voltage IC = 5A IB = 0.5A 1.3 1.6 IC = 1A VCE = 2V 100 hFE* DC Current Gain IC = 1.5A VCE = 0.6V 75 IC = 2A VCE = 2V IC = 0.5A VCE = 5V fT* Transition Frequency CEBO Emitter – Base Capacitance CCBO Collector – Base Capacitance ton Turn on Time VCC = 20V toff Turn off Time IB1 = – IB2= 0.5A f = 20MHz IC = 0 VEB = 0.5V f = 1MHz VCB = 10V IE = 0 f = 1MHz IC = 0.5A µA V 40 80 70 100 300 − 150 MHz 500 pF 40 100 0.6 1.2 µs * Pulse Duration = 300µs,duty cycle ≤ 2%. THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient 35 200 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5569 Issue 1