BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R G T2 T1 T2 G T1 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj Parameter Value Unit RMS on-state current (full sine wave) TO-22 0AB Tc = 100 °C 6 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 63 60 A 21 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms Peak gate current F = 120 Hz Tj = 125°C 50 A/µs tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate p ower diss ipation Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) ■ Symbol IGT (1) VGT Test Conditions VD = 12 V VGD VD = VDRM IH (2) IT = 100 mA IL IG = 1.2 IGT Quadrant RL = 30 Ω RL = 3.3 kΩ Tj = 125°C BTA/BTB 35 50 mA MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V I - III VD = 67 % VDRM gate open Tj = 125°C (dI/dt)c (2) Without snubber BW I - II - III MAX. 35 50 mA MAX. 50 70 mA 60 80 MIN. 400 1000 V/µs MIN. 3.5 5.3 A/ms II dV/dt (2) Unit CW Tj = 125°C BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) ■ STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) Quadrant RL = 30 Ω VD = 12 V VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 3.3 Ω Unit I - II - III IV MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 50 mA MAX. 50 VGT VGD Value Tj = 125°C I - III - IV II mA 100 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c =2.7 A/ms Tj = 125°C MIN. 400 V/µs MIN. 10 V/µs STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 5.5 A Vto (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.8 °C/W Rth(j-a) Junction to ambient 60 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package 50 mA Standard TO-220AB Marking Weight Base quantity Packing mode BTB/BTA06 2.3 g 250 Bulk 200 V ~~ 1000 V BTB/BTA06 X X OTHER INFORMATION Part Number BTB/BTA06 BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). F ig. : 2 R MS on-state current vers us cas e temperature (full cycle). P (W) IT (R MS ) (A ) 8 7 7 6 6 B TA 5 5 4 4 3 3 2 2 1 IT (R MS )(A ) 1 0 BTB 0 1 2 3 4 5 6 F ig. :3 R elative variation of thermal impeda nce versus pulse duration. 0 T c (°C ) 0 25 F ig. : 4On-s tate values ). 75 100 1E +0 T j max. V to = 0.85 V R d = 60 Ωm Zth(j-c) 1E -1 cha racteris tics (maximum T j=T j max V T M(V ) tp(s ) 1E -2 125 10 Zth(j-a) 1E -2 1E -3 100 IT M (A ) K =[Zth/R th] 1E -1 1E +0 1E +1 1E +2 5E +2 F ig. : 5 S urge peak on-state current vers us number of cycles . 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. : 6 Non-repetitive s urge pea k on-s tate current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of I²t. IT S M (A ),I²t (A ²s ) IT S M (A ) 1000 70 60 T j initial=25°C t=20ms 50 dI/dt limitation: 50A /µs One cycle IT S M Non repetitive T j initial=25°C 40 30 100 R epetitive T c=105°C 20 I²t 10 0 50 tp (ms ) Number of ycles c 1 10 100 1000 10 0.01 0.10 1.00 10.00 BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) F ig. 7: R ela tive variation of gate trigger current, holding current and latching current vers us junction temperature (typical values). F ig. -1: 8 R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typical values ). S nubberles s & Logic Level Types IG T,IH,IL [T j] / IG,IH,IL T [T j=25°C ] (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.5 2.0 IG T 1.5 IH & IL 1.0 0.5 T j(°C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. -2: 8 R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typica l values ). S tandard Types 2.4 2.2 2.0 1.8 1.6 1.4 S W 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 B W/C W (dV /dt)c (V /µs ) 1.0 10.0 100.0 F ig. : 9 R elative variation of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 TW 6 5 4 3 2 1 (dV /dt)c (V /µs ) 1.0 10.0 100.0 0 T j(°C ) 0 25 50 75 100 125