BU900TP NPN power TRILINTON Preliminary Data Features ■ Integrated high voltage active clamping zener ■ Integrated antiparallel collector-emitter diode ■ Clamping energy capability 100% tested ■ Very high current gain 1 Applications ■ Engine ignition control ■ Switching regulators ■ Motor control ■ Light ballast 2 3 SOT-82 Figure 1. Description Internal schematic diagram The BU900TP is a planar, monolithic, high voltage power Trilinton with a built-in active zener clamping circuit and an antiparallel Collector to Emitter diode. This device has been specifically designed for unclamped, inductive applications such as Ignition systems, Switching Regulators, and wherever high voltage and high robustness is required. Table 1. Device summary Part Number Marking Package Packing BU900TP BU900TP SOT-82 Tube August 2007 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/8 www.st.com 8 Electrical ratings 1 BU900TP Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit 370 V Emitter-base voltage (IC = 0) 8 V Collector current 5 A Collector peak current (tP < 5ms) 8 A Base current 1 A Ptot Total dissipation at Tc = 25°C 55 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 2.27 °C/W 80 °C/W V(BR)CES Collector-emitter breakdown voltage (VBE = 0) VEBO IC ICM IB TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter Rthj-case Thermal resistance junction-case Rthj-amb 2/8 Thermal resistance junction-ambient BU900TP 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit IEBO Emitter cut-off current (IC = 0) VEB = 8 V 100 µA ICES Collector cut-off current (VBE = 0) VCE = 370 V 100 µA Collector-emitter breakdown voltage (VBE = 0) IC = 50 mA 660 V V V V(BR)CES 370 VCE(sat) (1) Collector-emitter saturation voltage IC = 2.5 A IC = 3 A _ _ IB = 3 mA 4 4 VBE(sat) (1) Base-emitter saturation voltage IC = 3 A _ IB = 3 mA 3.5 V hFE DC current gain IC = 1 A _ VCE = 5 V 7000 VF Diode forward voltage IC = 5 A 18 V Es/b (1) Secondary breakdown energy IC = 4 A _ IB = 1 mA L = 10 mH 80 mJ 1. Pulsed duration = 300 ms, duty cycle ≤1.5% 3/8 Electrical characteristics 2.1 4/8 BU900TP Electrical characteristics (curves) Figure 2. DC current gain Figure 3. Collector-emitter saturation voltage Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage BU900TP 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data BU900TP SOT-82FM MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.85 3.05 1.122 1.200 A1 1.47 1.67 0.578 0.657 b 0.40 0.60 0.157 0.236 b1 1.4 1.6 0.551 0.630 b2 1.3 1.5 0.511 0.590 c 0.45 0.6 0.177 0.236 D 10.5 10.9 4.133 4.291 e 2.2 2.8 0.866 1.102 E 7.45 7.75 2.933 3.051 L 15.5 15.9 6.102 6.260 L1 1.95 2.35 0.767 0.925 P032R 6/8 BU900TP 4 Revision history Revision history Table 5. Document revision history Date Revision 02-Aug-2007 1 Changes First release. 7/8 BU900TP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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