FAIRCHILD FFPF10H60S_07

FFPF10H60S
Hyperfast 2 Rectifier
tm
Features
10A, 600V Hyperfast 2 Rectifier
• High Speed Switching ( trr=25ns(Typ.) @ IF=10A )
The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @
IF=10A). it has half the recovery time of ultrafast rectifier and is
silicon nitride passivated ion-implanted epitaxial planar construction.
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
• Low Forward Voltage( VF=2.1V(Typ.) @ IF=10A )
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
Pin Assignments
2
2. Anode
1
1. Cathode
TO-220F-2L
1. Cathode 2. Anode
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Value
Units
VRRM
Peak Repetitive Reverse Voltage
Parameter
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
Thermal Characteristics T
C
Symbol
@ TC = 85 °C
A
A
- 65 to +150
°C
= 25°C unless otherwise noted
Parameter
Maximum Thermal Resistance, Junction to Case
RθJC
10
100
Max
Units
3.4
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F10H60S
FFPF10H60STU
TO-220F
-
-
50
©2006 Fairchild Semiconductor Corporation
FFPF10H60S Rev. A
1
www.fairchildsemi.com
FFPF10H60S Hyperfast 2 Rectifier
April 2007
C
= 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
IF = 10A
IF = 10A
TC = 25 °C
TC = 125 °C
-
2.1
-
2.5
2.2
V
V
IRM1
VR = 600V
VR = 600V
TC = 25 °C
TC = 125 °C
-
-
1
2
mA
mA
trr
IF =1A, di/dt = 100A/µs, VCC = 30V
IF =10A, di/dt = 50A/µs, VCC = 390V
IF =10A, di/dt = 200A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
25
21
35
40
-
ns
ns
ns
ta
tb
Qrr
IF =10A, di/dt = 50A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
15
10
9.0
-
ns
ns
nC
WAVL
Avalanche Energy (L = 40mH)
20
-
-
mJ
VFM
1
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
2
FFPF10H60S Rev. A
www.fairchildsemi.com
FFPF10H60S Hyperfast 2 Rectifier
Electrical Characteristics T
C
= 25°C unless otherwise noted
Figure 1. Typical Forward Voltage Drop
Figure 2. Typical Reverse Current
1E-4
10
o
TC=125 C
REVERSE CURRENT, IR [A]
FPRWARD CURRENT, IF [A]
100
o
TC=25 C
1
o
TC=75 C
0.1
0.0
1E-5
o
TC = 125 C
o
1E-6
TC = 75 C
1E-7
o
TC = 25 C
1E-8
1E-9
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
100
FORWARD VOLTAGE, VF [V]
300
400
500
600
Figure 4. Typical Reverse Recovery Time
70
100
REVERSE RECOVERY TIME, trr [ns]
f = 1MHz
JUNCTION CAPACITANCE, CJ [pF]
200
REVERSE VOLTAGE, VR [V]
Figure 3. Typical Junction Capacitance
60
50
40
30
20
10
0
1
10
100
IF = 10A
90
80
o
TC = 125 C
70
60
50
o
TC = 75 C
40
30
20
o
TC = 25 C
10
0
50
1000
100
150
Figure 5. Typical Reverse Recovery Current
AVERAGE FORWARD CURRENT, IF(AV) [A]
IF = 10A
8
7
6
5
o
TC = 125 C
4
o
TC = 25 C
3
2
o
TC = 75 C
1
0
50
100
150
200
250
300 350 400 450500
16
14
12
10
8
DC
6
4
2
0
50
300 350 400 450500
60
70
80
90
100
110
120
130
140
150
o
di/dt [A/µs]
CASE TEMPERATURE, TC [ C]
3
FFPF10H60S Rev. A
250
Figure 6. Forward Current Deration Curve
10
9
200
di/dt [A/µs]
REVERSE VOLTAGE, VR [V]
REVERSE RECOVERY CURRENT, Irr [A]
FFPF10H60S Hyperfast 2 Rectifier
Typical Performance Characteristics T
www.fairchildsemi.com
FFPF10H60S Hyperfast 2 Rectifier
Mechanical Dimensions
TO-220F 2L
ø3.18 ±0.10
2.54 ±0.20
3.30 ±0.10
10.16 ±0.20
MAX1.47
15.87 ±0.20
(1.80)
(6.50)
(1.00x45°)
12.00 ±0.20
9.75 ±0.30
15.80 ±0.20
6.68 ±0.20
(0.70)
2.76 ±0.20
0.80 ±0.10
0.35 ±0.10
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
+0.10
0.50 –0.05
4.70 ±0.20
2.54TYP
[2.54 ±0.20]
Dimensions in Millimeters
4
FFPF10H60S Rev. A
www.fairchildsemi.com
tm
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
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Rev. I24