BULK128 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting 1 2 3 SOT-82 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BULK128 BULK128 SOT-82 Tube June 2008 Rev 2 1/11 www.st.com 11 Contents BULK128 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................ 5 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 BULK128 1 Electrical ratings Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC= 0, IB= 2 A, tp< 10 µs) V(BR)EBO V Collector current 4 A Collector peak current (tP < 5ms) 8 A Base current 2 A IBM Base peak current (tP < 5ms) 4 A Ptot Total dissipation at Tc = 25°C 55 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 2.27 °C/W 80 °C/W IC ICM IB TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter Rthj-case Thermal resistance junction - case Rthj-amb Thermal resistance junction - ambient 3/11 Electrical characteristics 2 BULK128 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Collector cut-off current (VBE = 0) V(BR)EBO Emitter base breakdown voltage (IC = 0) IE = 10 mA 9 Collector-emitter sustaining voltage (IB = 0) IC =10 mA 400 Collector cut-off current (IB = 0) VCE =400 V (1) ICEO VCE =700 V IC = 0.5 A VCE(sat) (1) Collector-emitter saturation voltage VBE(sat) Base-emitter saturation voltage IB = 0.1 A _ _ IB = 0.2 A IC = 2.5 A _ _ IB = 0.5 A IC = 1 A _ _ IC = 0.5 A IC = 1 A _ IB = 0.5 A DC current gain IC = 10 mA IC = 2 A 50 500 µA µA 18 V 250 µA 0.7 1 1.5 V V V V 1.1 1.2 1.3 V V V _ VCE = 5 V 10 _ _ VCE = 5 V 14 28 1.5 3 µs 0.2 0.4 µs 0.6 1 µs 0.1 0.2 µs Resistive load IC = 2 A VCC = 125 V ts Storage time IB1 = 0.4 A IB1 = -0.4 A tf Fall time tp = 30 µs Inductive load IC = 2 A ts Storage time IB1 = 0.4 A tf Fall time RBB = 0 1. Pulsed duration = 300 ms, duty cycle ≤1.5% Unit V IB = 0.1 A IB = 0.2 A Max. 0.5 IB = 1 A _ _ IC = 2.5 A hFE (1) TC = 125°C _ IC = 4 A (1) Typ. VCE =700 V ICES VCEO(sus) 4/11 Min. Vclamp = 200 V VBE(off) = -5 V BULK128 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage 5/11 Electrical characteristics Figure 8. Inductive load fall time Figure 10. Resistive load fall time Figure 12. Reverse biased operating area 6/11 BULK128 Figure 9. Inductive load storage time Figure 11. Resistive load storage time BULK128 3 Test circuit Test circuit Figure 13. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 14. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive Resistor 7/11 Package mechanical data 4 BULK128 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 BULK128 Package mechanical data SOT-82 mechanical data mm Dim. Min. A Typ. 2.40 Max. 2.70 B 0.70 0.90 B1 0.49 0.75 D 10.50 10.80 E 7.40 7.80 e 2.04 2.54 e1 4.07 5.08 L 15.40 16 Q Q1 3.80 1 1.30 H2 2.07 I 1.27 0016115_F 9/11 Revision history 5 BULK128 Revision history Table 5. 10/11 Document revision history Date Revision Changes 21-Nov-2001 1 Initial release 18-Jun-2008 2 Updated mechanical data BULK128 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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