BULT118 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC I CM IB Collector Current 2 A Collector Peak Current (t p < 5 ms) 4 A A Base Current 1 I BM Base Peak Current (t p < 5 ms) 2 A P tot Total Dissipation at T c = 25 o C 45 W T stg Storage Temperature Tj Max. Operating Junction Temperature September 2003 -65 to 150 o C 150 o C 1/7 BULT118 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 2.77 80 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 700 V V CE = 700 V V EBO Emitter-Base Voltage I E = 10 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO I C = 100 mA T j = 125 o C L = 25 mH Max. Unit 100 500 µA µA 9 V 400 V µA I B = 0.1 A I B = 0.2 A I B = 0.4 A 0.5 1 1.5 V V V I C = 0.5 A IC = 1 A IC = 2 A I B = 0.1 A I B = 0.2 A I B = 0.4 A 1.0 1.2 1.3 V V V I C = 10 mA I C = 0.5 A IC = 2 A V CE = 5 V V CE = 5 V V CE = 5 V V CE = 400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A IC = 2 A V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain tr ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time V CC = 125 V I B1 = 0.2 A IC = 1 A I B2 = -0.2 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 1 A V BE = -5 V V clamp = 300 V I B1 = 0.2 A L = 50 mH ∗ Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 2/7 Typ. 250 Collector-Emitter Leakage Current h FE ∗ Min. 10 10 8 50 0.4 3.2 0.25 0.8 0.16 0.7 4.5 0.4 µs µs µs µs µs BULT118 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULT118 Inductive Load Fall Time Inductive Load Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULT118 Figure 1: Inductive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULT118 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F G 3.8 3 0.150 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V o 10 10o 1: Base 2: Collector 3: Emitter 0016114/B 6/7 BULT118 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7