BUV42 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V V CEV Collector-emitter Voltage (VBE = -1.5V) 350 V CEO Collector-emitter Voltage (IB = 0) 250 V V EBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 12 A Collector Peak Current 18 A IB Base Current 2.5 A I BM Base Peak Current 4 A 1 A P tot Reverse Bias Base Dissipation (B. E. junction in avalanche) o T otal Dissipation at Tc ase ≤ 25 C T s tg Storage Temperature IC I CM P Bas e Tj Max Operating Junction Temperature October 1995 120 W -65 to 200 o C 200 o C 1/5 BUV42 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.46 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns I CER Collector Cut-off Current (R BE = 10Ω) V CE = V CEV V CE = V CEV I CEV Collector Cut-off Current V CE = V CEV V CE = V CEV I EBO Emitter Cut- off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EB0 V CE(sat) ∗ V BE(sat )∗ di c /dt ∗ V CE(2µs ) V CE(4µs ) T yp. Tc = 100o C V BE = -1.5V o V BE = - 1.5V T C=100 C Max. Unit 0.5 2.5 mA mA 0.5 2 mA mA 1 mA I C = 0.2A L = 25 mH 250 V Emitter-base Voltage (Ic = 0) I E = 50 mA 7 V Collector-Emitter Saturation Voltage IC IC IC IC IC IC = = = = = = 2A 4A 6A 2A 4A 6A IB IB IB IB IB IB = = = = = = 0.13A 0.4A 0.75A 0.13A 0.4A 0.75A IC IC IC IC = = = = 4A 6A 4A 6A IB IB IB IB = = = = 0.4A 0.75A 0.4A 0.75A Base-Emitter Saturation Voltage RC = 0 o 0.25 0.4 0.5 0.25 0.45 0.6 0.8 0.9 1.2 0.9 1.2 1.5 V V V V V V o 1 1.1 0.9 1.1 1.3 1.5 1.3 1.5 V V V V T j = 100 C o Tj = 100 C o T j = 100 C Tj = 100 C T j = 100 o C Rated of Rise of on-state Collector Current V CC = 200V Collector Emitter Dynamic Voltage V CC = 200V R C = 50Ω I B1 = 0.4A Tj = 25o C o T j = 100 C 1.7 2.5 2.5 4 V V Collector Emitter Dynamic Voltage VCC = 200V R C = 50Ω I B1 = 0.4A T j = 25 oC o T j = 100 C 0.9 1.1 1.7 2 V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 % 2/5 Min . IB1 = 0.6A o T j = 25 C T j = 100 o C 25 20 40 35 A/µs A/µs BUV42 ELECTRICAL CHARACTERISTICS (continued) Symbo l tr ts tf Parameter RESISTIVE LOAD Rise Time Storage Time Fall Time T est Con ditio ns Min . T yp. Max. Unit V CC = 200V V BB = -5V R B2 = 3.3Ω I C = 6A IB1 = 0.75A T p = 30µs 0.3 1 0.15 0.4 1.6 0.3 µs µs µs ts tf tt tc INDUCT IVE LOAD Storage Time Fall Time Tail Time in Turn-on Crossover Time V CC = 200V I CC = 4A V BB = -5V LC = 2.5mH V c la mp = 250V IB = 0.4A R B2 = 6.3Ω 1.2 0.08 0.03 0.15 1.8 0.2 0.12 0.35 µs µs µs µs ts tf tt tc Storage Time Fall Time Tail Time in Turn-on Crossover Time VCC = 200V I CC = 4A V BB = -5V LC = 2.5mH Vc la mp = 250V IB = 0.4A R B2 = 6.3Ω T j = 100o C 1.8 0.2 0.08 0.4 2.4 0.4 0.2 0.7 µs µs µs µs ts tf tt Storage Time Fall Time Tail Time in Turn-on V CC = 200V I CC = 4A V BB = 0 L C = 2.5mH V c la mp = 250V IB = 0.5A R B2 = 7.5Ω 2.5 0.4 0.15 µs µs µs ts tf tt Storage Time Fall Time Tail Time in Turn-on V CC = 200V I CC = 4A V BB = 0 L C = 2.5mH V c la mp = 250V IB = 0.4A R B2 = 7.5Ω T j = 100o C 4.8 0.7 0.4 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 % 3/5 BUV42 TO-3 (H) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 4/5 BUV42 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany- Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. . 5/5