MICROCHIP TC1300VUA

M
TC1300
300 mA CMOS LDO with Shutdown, Bypass and
Independent Delayed Reset Function
Features
General Description
• LDO with Integrated Microcontroller Reset
Monitor Functionality
• Low Input Supply Current (80 µA, typical)
• Very Low Dropout Voltage
• 10 µsec (typ.) Wake-Up Time from SHDN
• 300 mA Output Current
• Standard or Custom Output and Detected
Voltages
• Power-Saving Shutdown Mode
• Bypass Input for Quiet Operation
• Separate Input for Detected Voltage
• 140 msec Minimum RESET Output Duration
• Space-Saving MSOP Package
• Specified Junction Temperature Range:
-40°C to +125°C
The TC1300 combines a low dropout regulator and a
microcontroller reset monitor in an 8-Pin MSOP package. Total supply current is 80 µA (typical), 20 to 60
times lower than bipolar regulators.
Applications
•
•
•
•
•
Battery-Operated Systems
Portable Computers
Medical Instruments
Pagers
Cellular / GSM / PHS Phones
The TC1300 has a precise output with a typical accuracy of ±0.5%. Other key features include low noise
operation, low dropout voltage and internal feedforward compensation for fast response to step
changes in load. The TC1300 has both over-temperature and over-current protection. When the shutdown
control (SHDN) is low, the regulator output voltage falls
to zero, RESET output remains valid and supply current is reduced to 30 µA (typical). The TC1300 is rated
for 300 mA of output current and stable with a 1 µF output capacitor.
An active-low RESET is asserted when the detected
voltage (VDET) falls below the reset voltage threshold.
The RESET output remains low for 300 msec (typical)
after VDET rises above reset threshold. The TC1300
also has a fast wake-up response time (10 µsec.,
typical) when released from shutdown.
Typical Application Circuit
Related Literature
RESET
MSOP
GND 3
Bypass 4
2
C1
1 µF
TC1300VUA
 2002 Microchip Technology Inc.
VDET
VIN
VOUT
8
3
4
GND
Bypass
NC
VDET
7
C2
1 µF
TC1300
CBYPASS
470 pF
(Optional)
Package Type
RESET 1
VOUT 2
VOUT
RESET
+
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765.
• AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766.
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792.
1
6
Battery
SHDN 5
Shutdown Control
(from Power
Control Logic)
8 VDET
7 VIN
6 NC
5 SHDN
DS21385C-page 1
TC1300
1.0
ELECTRICAL
CHARACTERISTICS
PIN DESCRIPTIONS
Pin
Absolute Maximum Ratings*
RESET
Input Voltage ....................................................................6.5V
Output Voltage ................................. (VSS - 0.3) to (VIN + 0.3)
Power Dissipation ......................... Internally Limited (Note 6)
Operating Junction Temperature, TJ ....... – 40°C < TJ< 150°C
Maximum Junction Temperature, Tj .............................. 150°C
Storage Temperature .................................. – 65°C to +150°C
Maximum Voltage on Any Pin ............. (VSS-0.3) to (VIN +0.3)
*Notice: Stresses above those listed under “maximum ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Description
RESET output remains low while V DET is
below the reset voltage threshold and for
300 msec after VDET rises above reset theshold.
VOUT
Regulated Voltage Output
GND
Ground Terminal
Bypass
Reference Bypass Input. Connecting an
optional 470 pF to this input further reduces
output noise.
SHDN
Shutdown Control Input. The regulator is fully
enabled when a logic high is applied to this
input. The regulator enters shutdown when a
logic low is applied to this input. During shutdown, regulator output voltage falls to zero,
RESET output remains valid and supply current is reduced to 30 µA (typ.).
NC
No connect
VIN
Power Supply Input
VDET
Detected Input Voltage. VDET and V IN can be
connected together.
ELECTRICAL CHARACTERISTICS
VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH , TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
VIN
2.7
—
6.0
V
IOUT MAX
300
—
—
mA
V OUT
—
VR - 2.5%
VR ± 0.5%
—
—
VR + 2.5%
V
∆VOUT/∆T
—
25
—
Line Regulation
∆VOUT/∆VIN
—
0.02
0.35
%
(VR + 1V) < VIN < 6V
Load Regulation
∆VOUT/VOUT
—
0.5
2.0
%
IL = 0.1 mA to IOUTMAX, Note 3
Input Operating Voltage
Maximum Output Current
Output Voltage
VOUT Temperature Coefficient
Conditions
Note 7
Note 1
ppm/°C Note 2
Note 1: VR is the regulator output voltage setting.
2:
TCV
6
( V O UTMAX – V OUTMIN ) × 10
= -------------------------------------------------------------------------------------OUT
V
× ∆T
OUT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and V IN ≥ (VR + VDROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
DS21385C-page 2
 2002 Microchip Technology Inc.
TC1300
ELECTRICAL CHARACTERISTICS (CONTINUED)
VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH , TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
VIN –VOUT
—
1
70
210
30
130
390
mV
IL = 0.1 mA
IL = 100 mA
IL = 300 mA
Supply Current
ISS1
—
80
160
µA
SHDN = VIH
Shutdown Supply Current
ISS2
—
30
60
µA
SHDN = 0V
Power Supply Rejection Ratio
PSRR
—
60
—
dB
f ≤ 1 kHz, CBYPASS = 1 nF
Output Short Circuit Current
IOUT SC
—
800
1200
mA
VOUT = 0V
∆VOUT /∆PD
—
0.04
—
%/W
Note 5
Output Noise
eN
—
900
—
nV/Hz
Wake-Up Time
(from Shutdown Mode)
tWK
—
10
20
µsec
CIN = 1 µF, VIN = 5V,
COUT = 4.7 µF, IL = 30 mA,
See Figure 3-2
Settling Time
(from Shutdown Mode)
ts
—
50
—
µsec
CIN = 1 µF, VIN = 5V
COUT = 4.7 µF
IL = 30 mA, See Figure 3-2
Thermal Shutdown Die
Temperature
TSD
—
150
—
°C
Thermal Shutdown Hysteresis
THYS
—
10
—
°C
RthetaJA
—
200
—
SHDN Input High Threshold
VIH
45
—
—
%V IN
VIN = 2.5V to 6.0V
SHDN Input Low Threshold
V IL
—
—
15
%V IN
VIN = 2.5V to 6.0V
Dropout Voltage (Note 4)
Thermal Regulation
Thermal Resistance Junction to
Case
Conditions
f < 1 kHz, COUT = 1 µF,
RLOAD = 50 Ω,
CBYPASS = 1 nF
°C/Watt EIA/JEDEC JESD51-751-7 4Layer Board
Note 1: VR is the regulator output voltage setting.
2:
TCV
6
(V
–V
) × 10
O UTMAX
OUTMIN
= -------------------------------------------------------------------------------------OUT
V
× ∆T
OUT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and V IN ≥ (VR + VDROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
 2002 Microchip Technology Inc.
DS21385C-page 3
TC1300
ELECTRICAL CHARACTERISTICS (CONTINUED)
VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH , TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Voltage Range
VDET
1.0
1.2
—
—
6.0
6.0
V
TA = 0°C to +70°C
TA = – 40°C to +125°C
Reset Threshold
VTH
2.59
2.63
2.66
V
TC1300R-XX, TA = +25°C
2.55
—
2.70
TC1300R-XX,
TA = – 40°C to +125°C
2.36
2.40
2.43
TC1300Y-XX, TA = +25°C
2.32
—
2.47
TC1300Y-XX,
TA = – 40°C to +125°C
∆VTH / ∆T
—
30
—
ppm/°C
VDET to Reset Delay
tRPD
—
160
—
µsec
Reset Active Timeout Period
tRPU
140
300
560
msec
RESET Output Voltage Low
VOL
—
—
0.3
V
VDET = VTH min,
ISINK = 1.2 mA
RESET Output Voltage High
VOH
0.8 VDET
—
—
V
VDET > VTH max,
ISOURCE = 500 µA
RESET Output
Reset Threshold Tempco
VDET = VTH to (VTH – 100 mV)
Note 1: VR is the regulator output voltage setting.
2:
6
( V O UTMAX – V OUTMIN ) × 10
TCV OUT = -------------------------------------------------------------------------------------V OUT × ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and V IN ≥ (VR + VDROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
DS21385C-page 4
 2002 Microchip Technology Inc.
TC1300
2.0
TYPICAL CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
Line Regulation (%)
0.035
VOUT = 3.0V
VIN = 3.5V to 6.0V
0.030
0.025
0.020
0.015
0.010
0.005
0.000
-40 -25 -10
5
20
35
50
65
80
Reset Active Time-out Period
(ms)
Note:
450
400
350
300
250
200
150
100
50
0
95 110 125
-40 -25 -10
Junction Temperature (°C)
FIGURE 2-1:
Temperature.
Line Regulation vs.
35
50
0.10
VOUT = 3.0V
0.08
VOUT = 2.5V
0.06
0.04
0.02
-40 -25 -10
5
0.10
0.01
0.01
20 35 50 65 80 95 110 125
1
1.00
0.10
10
10.00
FIGURE 2-5:
2.498
2.497
2.496
2.495
VIN = VOUT + 1V
IOUT = 100 µA
VOUT = 2.5V
Dropout Voltage (V)
2.499
2.492
1000
1000.00
Output Noise vs. Frequency.
0.30
2.500
2.493
100
100.00
Frequency (kHz)
Supply Current vs.
2.494
95 110 125
1.00
Junction Temperature (°C)
FIGURE 2-2:
Temperature.
80
RLOAD = 50 Ohms
COUT = 1 µF
VIN = VOUT + 1V
Output Noise (µV/lHz)
0.12
VOUT = 5.0V
65
FIGURE 2-4:
Reset Active Time-out
Period vs. Temperature.
0.00
Output Voltage (V)
20
10.00
0.14
Supply Current (mA)
5
Junction Temperature (°C)
VOUT = 2.5V
0.25
TJ = -40°C
TJ = +125°C
0.20
0.15
TJ = +25°C
0.10
0.05
0.00
2.491
-40 -25 -10
5
20
35
50
65
80
95 110 125
0
FIGURE 2-3:
Temperature.
Normalized VOUT vs.
 2002 Microchip Technology Inc.
100
200
300
400
Load Current (mA)
Junction Temperature (°C)
FIGURE 2-6:
Current (2.5V).
Dropout Voltage vs. Load
DS21385C-page 5
TC1300
2.0 TYPICAL CHARACTERISTICS (CON’T)
60
VIN = 3.8V
VOUT = 2.8V
IOUT = 50 mA
COUT = 10 µF
COUTesr = 0.25 :
CBYPASS = 0 µF
45
30
15
0.3
Dropout Voltage (V)
Power Supply Ripple Rejection
(dB)
Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
VOUT = 5.0V
0.25
0.2
0.15
TJ = +25°C
0.1
0.05
0
0
10
1k
1000
100
10k
10000
100k
100000
0
1M
1000000
100
200
300
400
Load Current (mA)
Frequency (Hz)
FIGURE 2-7:
Power Supply Rejection
Ratio vs. Frequency.
Reset Voltage Threshold (V)
TJ = -40°C
TJ = +125°C
FIGURE 2-10:
Current (5.0V).
Dropout Voltage vs. Load
FIGURE 2-11:
Wake-Up Response Time.
2.6330
2.6325
2.6320
2.6315
2.6310
2.6305
2.6300
2.6295
2.6290
2.6285
2.6280
2.6275
-40 -25 -10
5
20 35
50
65 80
95 110 125
Load Regulation (1 mA to 300
mA) %
FIGURE 2-8:
Reset Voltage Threshold vs.
Junction Temperature.
0.90
VIN = VOUT + 1V
0.80
VOUT = 3.0V
0.70
0.60
0.50
VOUT = 2.5V
0.40
VOUT = 5.0V
0.30
0.20
-40 -25 -10
5
20
35
50
65
80
95 110 125
VDET to RESET Delay Time (µS)
Junction Temperature (°C)
300
250
10 mV Overdrive
200
100 mV Overdrive
150
100
50
0
-40 -25 -10
FIGURE 2-9:
Temperature.
DS21385C-page 6
Load Regulation vs.
5
20
35
50
65
80
95 110 125
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-12:
Temperature.
VDET to Reset Delay vs.
 2002 Microchip Technology Inc.
TC1300
2.0 TYPICAL CHARACTERISTICS (CON’T)
Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
FIGURE 2-13:
Load Transient Response
1 µF Output Capacitor.
FIGURE 2-16:
Line Transient Response
10 µF Output Capacitor.
0.30
VDET = VTH - 20 mV
RESET VOL (V)
0.25
ISINK = 3.2 mA
0.20
0.15
ISINK = 1.2 mA
0.10
0.05
0.00
-40 -25 -10
5
20
35
50
65
80
95 110 125
Junction Temperature (°C)
FIGURE 2-14:
Line Transient Response
1 µF Output Capacitor.
FIGURE 2-17:
RESET Output Voltage Low
vs. Junction Temperature.
3.960
RESET VOH (V)
3.950
ISOURCE = 500 µA
3.940
3.930
3.920
ISOURCE = 800 µA
3.910
3.900
VDET = 4.0V
3.890
-40 -25 -10
5
20
35
50
65
80
95 110 125
Junction Temperature (°C)
FIGURE 2-15:
Load Transient Response
10 µF Output Capacitor.
 2002 Microchip Technology Inc.
FIGURE 2-18:
RESET Output Voltage High
vs. Junction Temperature.
DS21385C-page 7
TC1300
3.0
DETAILED DESCRIPTION
The TC1300 is a combination of a fixed output, low
dropout
regulator
and
a
microcontroller
monitor/RESET. Unlike bipolar regulators, the TC1300
supply current does not increase with load current. In
addition, VOUT remains stable and within regulation
over the entire specified operating load range (0 mA to
300 mA) and operating input voltage range (2.7V to
6.0V).
Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN)
is above VIH. The regulator is shutdown (disabled)
when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or an I/O port of a microcontroller. If the SHDN input is not required, it should be
connected directly to the input supply. While in shutdown, supply current decreases to 30 µA (typical),
VOUT falls to zero and RESET remains valid.
3.1
RESET Output
The RESET output is driven active-low within 160 µsec
of VDET falling through the reset voltage threshold.
RESET is maintained active for a minimum of
140 msec after VDET rises above the reset threshold.
The TC1300 has an active-low RESET output. The output of the TC1300 is valid down to V DET = 1V and is
optimized to reject fast transient glitches on the V DET
line.
Microcontroller
RESET
C1
1 µF
RESET
VDET
2 V
OUT
VIN 7
TC1300
3
4
GND
NC
VDET
C2
1 µF
6
Battery
Bypass SHDN 5
CBYPASS
470 pF
(Optional)
FIGURE 3-1:
8
+
VOUT
1
TC1300, the selected output capacitor equivalent
series resistance (ESR) range is 0.1 ohms to 5 ohms
when using 1 µF of output capacitance, and 0.01 ohms
to 5 ohms when using 10 µF of output capacitance.
Because of the ESR requirement, tantalum and aluminum electrolytic capacitors are recommended. Aluminum electrolytic capacitors are not recommended for
operation at temperatures below -25°C. When operating from sources other than batteries, rejection and
transient responses can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
3.3
Bypass Input (Optional)
An optional 470 pF capacitor connected from the
Bypass input to ground reduces noise present on the
internal reference, which in turn significantly reduces
output noise and improves PSRR performance. This
input may be left unconnected. Larger capacitor values
may be used, but results in a longer time period to rated
output voltage when power is initially applied.
3.4
Turn On Response
The turn-on response is defined as two separate
response categories, Wake-Up Time (tWK) and Settling
Time (tS).
The TC1300 has a fast Wake-Up Time (10 µsec typical) when released from shutdown. See Figure 3-2 for
the Wake-Up Time designated as tWK. The Wake-Up
Time is defined as the time it takes for the output to rise
to 2% of the VOUT value after being released from
shutdown.
The total turn-on response is defined as the Settling
Time (tS) (see Figure 3-2). Settling Time (inclusive with
tWK) is defined as the condition when the output is
within 2% of its fully enabled value (50 µsec typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions and
output capacitance on VOUT (RC response).
Shutdown Control
(from Power
Control Logic)
Typical Application Circuit.
VIH
SHDN
VIL
tS
98%
3.2
Output Capacitor
A 1 µF (min) capacitor from V OUT to ground is required.
A 1 µF capacitor should also be connected from VIN to
GND if there is more than 10 inches of wire between
the regulator and the AC filter capacitor, or if a battery
is used as the power source. As with all low dropout
regulators, a minimum output capacitance is required
to stabilize the output voltage. For the TC1300, a minimum of 1 µF of output capacitance is enough to stabilize the device over the entire operating load and line
range. The selected output capacitor plays an important role is compensating the LDO regulator. For the
DS21385C-page 8
VOUT
2%
tWK
FIGURE 3-2:
Wake-Up Response Time.
 2002 Microchip Technology Inc.
TC1300
4.0
THERMAL CONSIDERATIONS
4.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the regulator off when the die temperature exceeds 150°C. The
regulator remains off until the die temperature drops to
approximately 140°C.
4.2
The worst case actual power dissipation equation can
be used in conjunction with the LDO maximum allowable power dissipation equation to ensure regulator
thermal operation is within limits. For example:
Given:
Power Dissipation
The amount of power the regulator dissipates is primarily a function of input and output voltage, and output
current. The following equation is used to calculate
worst case actual power dissipation:
EQUATION
VINMAX
=
4.1V
VOUTMIN
=
3.0V -2.5%
ILOADMAX
=
200 mA
TJMAX
=
125°C
TAMAX
=
55°C
θJA
=
200°C/W
Find:
EQUATION:
P D ≈ ( V INMAX – V OUTMIN )I LO ADMAX
ACTUAL POWER
DISSIPATION
P D ≈ ( V INMAX – V OUTMIN )I LO ADMAX
Where:
PD = worst case actual power dissipation
VINMAX = maximum voltage on VIN
VOUTMIN = minimum regulator output voltage
ILOADMAX = maximum output (load) current
= [ ( 4.1 ) – ( 3.0 × .975 ) ] 200 × 10
= 220 mW
EQUATION:
The maximum allowable power dissipation, PDMAX, is a
function of the maximum ambient temperature (TAMAX),
the maximum recommended die temperature (125°C)
and the thermal resistance from junction-to-air (θJA).
The MSOP-8 package has a θJA of approximately
200°C/Watt when mounted on a FR4 dielectric copper
clad PC board.
EQUATION
( T JMAX – T AMAX )
P DMAX = -------------------------------------------θ JA
–3
MAXIMUM ALLOWABLE
POWER DISSIPATION
( T JMAX – T AMAX )
P DMAX = -------------------------------------------θ JA
( 125 – 55 )
= ------------------------200
= 350 mW
In this example, the TC1300 dissipates a maximum of
only 220 mW; below the allowable limit of 350 mW. In a
similar manner, the maximum actual power dissipation
equation and the maximum allowable power dissipation equation can be used to calculate maximum current and/or input voltage limits. For example, the
maximum allowable VIN is found by substituting the
maximum allowable power dissipation of 350 mW into
the actual power dissipation equation, from which
VINMAX = 4.97V.
4.3
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower θJA and, therefore,
increase the maximum allowable power dissipation
limit.
 2002 Microchip Technology Inc.
DS21385C-page 9
TC1300
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
Example:
8-Lead MSOP
XXXXXX
1300RA
YWWNNN
YWWNNN
Part Number
Legend:
Note:
*
XX...X
Y
WW
NNN
Marking Code
(XXXXXX)
TC1300R - 2.5VUA
1300RA
TC1300Y - 2.7VUA
1300YF
TC1300R - 2.8VUA
1300RB
TC1300R - 2.85VUA
1300RC
TC1300R - 3.0VUA
1300RD
TC1300R - 3.3VUA
1300RE
Customer specific information*
Year code (last digit of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please
check with your Microchip Sales Office.
DS21385C-page 10
 2002 Microchip Technology Inc.
TC1300
5.2
Package Dimensions
Component Taping Orientation for 8-Pin MSOP Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size:
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
12 mm
8 mm
2500
13 in.
8-Pin MSOP
 2002 Microchip Technology Inc.
DS21385C-page 11
TC1300
8-Lead Plastic Micro Small Outline Package (UA) (MSOP)
E
p
E1
D
2
B
n
1
α
A2
A
A1
c
φ
(F)
L
β
Units
Number of Pins
Pitch
Dimension Limits
n
p
Overall Height
NOM
MAX
8
0.65
.026
A
.044
.030
Standoff
A1
.002
E
.184
Molded Package Width
MIN
8
A2
Overall Width
MAX
NOM
Molded Package Thickness
§
MILLIMETERS*
INCHES
MIN
1.18
.038
0.76
.006
0.05
.193
.200
.034
0.86
0.97
4.67
4.90
.5.08
0.15
E1
.114
.118
.122
2.90
3.00
3.10
Overall Length
D
.114
.118
.122
2.90
3.00
3.10
Foot Length
L
.016
.022
.028
0.40
0.55
0.70
Footprint (Reference)
.035
.037
.039
0.90
0.95
1.00
Foot Angle
F
φ
6
0
Lead Thickness
c
.004
.006
.008
0.10
0.15
0.20
Lead Width
B
α
.010
.012
.016
0.25
0.30
0.40
Mold Draft Angle Top
Mold Draft Angle Bottom
β
0
6
7
7
7
7
*Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
Drawing No. C04-111
DS21385C-page 12
 2002 Microchip Technology Inc.
TC1300
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X.X
X
/XX
Device
Output
Voltages
Temperature
Range
Package
Device:
TC1300X-X.XXXX:
300mA CMOS LDO w/Shutdown,
Bypass & Independent Delayed
Reset
TC1300X-X.XXXXTR: 300mA CMOS LDO w/Shutdown,
Bypass & Independent Delayed
Reset (Tape and Reel)
Examples:
a)
b)
c)
d)
Output Voltages:
RESET Threshold
Voltages:
- 2.4V = Y
- 2.63V = R
2.5V
2.7V
2.8V
2.85V
3.0V
3.3V
=
=
=
=
=
=
Temperature Range:
V
-40°C to +125°C
Package:
UA = Micro Small Outline Package (MSOP), 8-lead
=
2.5
2.7
2.8
2.85
3.0
3.3
e)
f)
g)
TC1300R-2.5VUA: 300mA CMOS LDO w/
Shutdown, Bypass & Independent Delayed
Reset, 2.5V output voltage, 2.63V RESET
Threshold.
TC1300R-2.8VUA: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset,
2.8V output voltage, 2.63V RESET Threshold.
TC1300R-2.85VUA: 300mA CMOS LDO w/
Shutdown, Bypass & Independent Delayed
Reset, 2.85V output voltage, 2.63V RESET
Threshold.
TC1300R-3.0VUA: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset,
3.0V output voltage, 2.63V RESET Threshold.
TC1300R-3.3VUA: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset,
3.3V output voltage, 2.63V RESET Threshold.
TC1300R-2.85VUATR: 300mA CMOS LDO w/
Shutdown, Bypass & Independent Delayed
Reset, 2.85V output voltage, 2.63V RESET
Threshold, tape and reel.
TC1300Y-2.7VUA: 300mA CMOS LDO w/ Shutdown, Bypass & independant Delayed Reset,
2.7V output voltage, 2.4V RESET Threshold.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21385C-page13
TC1300
NOTES:
DS21385C-page 14
 2002 Microchip Technology Inc.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, K EELOQ,
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21385C - page 15
M
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Rocky Mountain
China - Beijing
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Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
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Tel: 630-285-0071 Fax: 630-285-0075
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Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
San Jose
Microchip Technology Inc.
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San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-82350361 Fax: 86-755-82366086
China - Hong Kong SAR
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Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
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Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
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Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
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Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
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Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology (Barbados) Inc.,
Taiwan Branch
11F-3, No. 207
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Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
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Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
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91300 Massy, France
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Germany
Microchip Technology GmbH
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Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
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Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
10/18/02
DS21385B-page 16
 2002 Microchip Technology Inc.