STMICROELECTRONICS GW40NC60WD

STGW40NC60WD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
General features
Type
VCES
STGW40NC60WD
600V
IC
VCE(sat)
(Max)@ 25°C @100°C
<2.5V
40A
■
Low CRES / CIES ratio (no cross conduction
susceptibility)
■
High frequency operation
■
Very soft ultra fast recovery anti parallel diode
TO-247
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “W” identifies a family
optimized for very high frequency application.
Internal schematic diagram
Applications
■
High frequency inverters, UPS
■
Motor drivers
■
HF, SMPS and PFC in both hard switch and
resonant topologies
■
Welding
Order codes
Part number
Marking
Package
Packaging
STGW40NC60WD
GW40NC60WD
TO-247
Tube
July 2006
Rev 2
1/14
www.st.com
14
Contents
STGW40NC60WD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STGW40NC60WD
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC (1)
Collector current (continuous) at 25°C
70
A
Collector current (continuous) at 100°C
40
A
Turn-off SOA minimum current
230
A
Gate-emitter voltage
±20
V
Diode RMS forward current at TC=25°C
15
A
PTOT
Total dissipation at TC = 25°C
250
W
Tstg
Operating junction temperature
– 55 to 150
°C
300
°C
IC
ICL
(1)
(2)
VGE
IF
1.
Absolute maximum ratings
Tj
Storage temperature
TL
Maximum lead temperature for soldering
purpose (1.6mm from case, for 10sec.)
Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Vclamp = 480V , Tj = 150°C, RG = 10Ω, VGE= 15V
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
0.6
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
50
°C/W
3/14
Electrical characteristics
2
STGW40NC60WD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
Test condictions
VBR(CES)
Collector-emitter breakdown
IC = 1mA, VGE = 0
voltage
VCE(SAT)
Collector-emitter saturation
voltage
VGE= 15V, IC= 30A, Tj= 25°C
Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector-emitter leakage
current (VCE = 0)
VGE = Max rating,Tc=25°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20V , VCE = 0
Forward transconductance
VCE = 15V, IC= 30A
VGE(th)
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Min.
Typ.
Max. Unit
600
V
2.1
1.9
VGE= 15V, IC= 30A, Tj= 125°C
3.75
VGE = Max rating, Tc=125°C
20
2.5
V
V
5.75
V
50
3
µA
mA
±100
nA
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test condictions
VCE = 25V, f = 1 MHz, VGE= 0
VCE = 390V, IC = 30A,
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
(see Figure 16)
ICL
Turn-off SOA Minimum
current
RG = 10Ω, VGE= 15V
Qge
4/14
Static
VGE = 15V,
Vclamp = 480V , Tj = 150°C
Min.
Typ.
2900
298
59
Max. Unit
pF
pF
pF
126
16
46
nC
nC
nC
230
A
STGW40NC60WD
Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 30A
Turn-on delay timE
Current rise time
Turn-on current slope
VCC = 390V, IC = 30A
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 30A,
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 30A,
Min.
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 15)
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 15)
RGE = 10Ω , VGE =15V,
TJ=25°C (see Figure 15)
RGE=10Ω , VGE =15V,
Tj=125 °C (see Figure 15)
Typ.
Max. Unit
33
12
260
ns
ns
A/µs
32
14
2300
ns
ns
A/µs
26
168
36
ns
ns
ns
54
213
67
ns
ns
ns
Switching energy (inductive load)
Parameter
Eon (1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
(1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon
Eoff (2)
Ets
Test condictions
Test condictions
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 15)
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 15)
Min
Typ.
Max
Unit
302
394
651
µJ
µJ
µJ
553
750
1303
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
Table 7.
Symbol
Collector-emitter diode
Parameter
Test condictions
Typ.
Max
Unit
If = 3.5A
If = 3.5A, Tj = 125°C
1.4
1.1
1.9
V
V
45
56
2.5
ns
nC
A
100
290
5.8
ns
nC
A
Vf
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, VR = 40 V,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, VR = 40V,
Qrr
Irrm
trr
Qrr
Irrm
6/14
STGW40NC60WD
Tj = 25°C, di/dt = 100A/µs
(see Figure 18)
di/dt =100A/µs,
Tj =125°C (see Figure 18)
Min
STGW40NC60WD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Collector-emitter on voltage vs
collector current
Figure 6.
Normalized gate threshold vs
temperature
7/14
Electrical characteristics
STGW40NC60WD
Figure 7.
Normalized breakdown voltage vs
temperature
Figure 8.
Gate charge vs gate-emitter voltage
Figure 9.
Capacitance variations
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
8/14
STGW40NC60WD
Figure 13. Thermal impedance
Electrical characteristics
Figure 14. Turn-off SOA
9/14
Test circuit
3
STGW40NC60WD
Test circuit
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
Figure 17. Switching waveforms
Figure 18. Diode recovery times waveform
10/14
STGW40NC60WD
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
Package mechanical data
STGW40NC60WD
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/14
TYP
5.50
0.216
STGW40NC60WD
5
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
8-Jun-2006
1
First release
10-Jul-2006
2
Modified Dynamic
13/14
STGW40NC60WD
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