STMICROELECTRONICS HCF4019BM1

HCF4019B
QUAD AND/OR SELECT GATE
■
■
■
■
■
■
■
MEDIUM-SPEED OPERATION
tPD = 60ns (Typ.) at VDD = 10V
QUIESCENT CURRENT SPECIFIED UP TO
20V
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4019B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4019B types are comprised of four AND/
OR select gate configurations, each consisting of
two 2 input AND gates driving a single 2-input OR
DIP
SOP
ORDER CODES
PACKAGE
TUBE
T&R
DIP
SOP
HCF4019BEY
HCF4019BM1
HCF4019M013TR
gate. Selection is accomplished by control bits Ka
and Kb. In addition to selection of either channel A
or channel B information, the control bits can be
applied simultaneously to accomplish the logical
A+B function.
PIN CONNECTION
September 2001
1/9
HCF4019B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
6, 4, 2, 15
7, 5, 3, 1
10, 11,12, 13
A1 to A4
B1 to B4
D1 to D4
Ka, Kb
9, 14
NAME AND FUNCTION
Data Inputs
Data inputs
Data Outputs
Control bits
8
VSS
Negative Supply Voltage
16
VDD
Positive Supply Voltage
TRUTH TABLE
CONTROL
LOGIC DIAGRAM
Ka
Kb
H
H
X
X
L
X
X
H
H
L
INPUTS
OUTPUT
A1 to A4 B1 to B4 D1 to D4
H
L
X
X
X
X
X
H
L
X
H
L
H
L
L
X : Don"t Care
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Supply Voltage
VI
DC Input Voltage
II
DC Input Current
PD
Value
Unit
-0.5 to +22
V
-0.5 to VDD + 0.5
± 10
V
mA
200
100
mW
mW
Top
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
2/9
Parameter
Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Value
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
HCF4019B
DC SPECIFICATIONS
Test Condition
Symbol
IL
VOH
VOL
VIH
VIL
IOH
IOL
II
CI
Parameter
Quiescent Current
High Level Output
Voltage
Low Level Output
Voltage
VI
(V)
Low Level Input
Voltage
Output Sink
Current
Input Leakage
Current
Input Capacitance
|IO| VDD
(µA) (V)
0/5
0/10
0/15
0/20
0/5
0/10
0/15
5/0
10/0
15/0
High Level Input
Voltage
Output Drive
Current
VO
(V)
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
Value
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
Any Input
Any Input
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
TA = 25°C
Min.
Typ.
Max.
0.02
0.02
0.02
0.04
1
2
4
20
4.95
9.95
14.95
-40 to 85°C
-55 to 125°C
Min.
Min.
30
60
120
600
4.95
9.95
14.95
0.05
0.05
0.05
4.95
9.95
14.95
3.5
7
11
1.5
3
4
-3.2
-1
-2.6
-6.8
1
2.6
6.8
±0.1
5
7.5
0.05
0.05
0.05
1.5
3
4
V
V
1.5
3
4
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
µA
V
3.5
7
11
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
±10-5
Max.
30
60
120
600
0.05
0.05
0.05
3.5
7
11
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
Max.
Unit
V
mA
mA
±1
µA
pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Test Condition
Symbol
Value (*)
Unit
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time
tTLH tTHL Output Transition Time
5
10
15
5
10
15
Min.
Typ.
Max.
150
60
50
100
50
40
300
120
100
200
100
80
ns
ns
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
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HCF4019B
TYPICAL APPLICATIONS
AND OR SELECTED GATING
SHIFT LEFT SHIFT RIGHT REGISTER
4/9
HCF4019B
TRUE COMPLEMENT SELECTOR
AND-OR EXCLUSIVE OR SELECTOR
TRUTH TABLE
K[*]
K[⊕]
OUT
L
H
L
H
L
L
H
H
L
A-B
A⊕B
A+B
5/9
HCF4019B
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
6/9
HCF4019B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm.
inch
DIM.
MIN.
a1
0.51
B
0.77
TYP
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
7/9
HCF4019B
SO-16 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
9.8
10
0.385
0.393
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8° (max.)
PO13H
8/9
HCF4019B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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