IRF630M IRF630MFP N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID IRF630M 200 V < 0.40 Ω 9A IRF630MFP 200 V < 0.40 Ω 9A ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized 3 3 1 TO-220 2 1 2 TO-220FP Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging IRF630M IRF630M TO-220 Tube IRF630MFP IRF630MFP TO-220FP Tube June 2006 Rev 2 1/14 www.st.com 14 Contents IRF630M - IRF630MFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 9 IRF630M - IRF630MFP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value IRF630M VDS VDGR VGS ID Unit IRF630MFP Drain-source Voltage (VGS = 0) 200 V Drain-gate voltage (RGS = 20 kW) 200 V Gate- source voltage ± 20 Drain current (continuos) at TC = 25°C V 9 9 (1) A Drain current (continuos) at TC = 100°C 5.7 Drain current (pulsed) 36 36 A Total dissipation at TC = 25°C 75 30 W Derating factor 0.6 0.24 W/°C Peak diode recovery voltage slope 5 5 V/ns VISO Insulation winthstand voltage (DC) -- 2500 V Tstg Storage temperature ID IDM (2) PTOT dv/dt (3) Tj 5.7 (1) A –65 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤9A, di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤TJMAX. Table 2. Thermal data Rthj-case Thermal resistance junction-case max TO-220 TO-220FP 1.67 4.17 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value Unit 5 A 350 mJ 3/14 Electrical characteristics 2 IRF630M - IRF630MFP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 4.5A Table 5. Symbol Test conditions Typ. Max. 200 Unit V 1 50 µA µA ±100 nA 3 4 V 0.35 0.40 Ω Min. Typ. Max. Unit 3 4 2 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 4.5A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 540 90 35 700 pF pF pF tr(Voff) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD = 100V, ID = 4.5A RG = 4.7Ω VGS = 10V 10 15 12 12 14 20 17 17 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 160V, ID = 9A, VGS = 10V 31 7.5 9 45 nC nC nC td(on tr 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/14 Min. S IRF630M - IRF630MFP Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Electrical characteristics Sourse drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 9A, VGS = 0 Reverse recovery time I = 9A, di/dt = 100A/µs Reverse recovery charge SD VDD = 50V, Tj = 150°C Reverse recovery current 170 0.95 11 Max. Unit 9 36 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/14 Electrical characteristics IRF630M - IRF630MFP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/14 IRF630M - IRF630MFP Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/14 IRF630M - IRF630MFP IRF630M - IRF630MFP 3 Test circuit Test circuit Figure 14. Unclamped Inductive load test circuit Figure 15. Unclamped inductive waveform Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times 9/14 Package mechanical data 4 IRF630M - IRF630MFP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 IRF630M - IRF630MFP Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/14 Package mechanical data IRF630M - IRF630MFP TO-220FP MECHANICAL DATA mm. DIM. MIN. A inch TYP 4.4 MAX. MIN. TYP. 4.6 0.173 0.181 MAX. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 28.6 30.6 1.126 1.204 L4 9.8 L5 2.9 10.6 .0385 0.417 3.6 0.114 L6 0.141 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 0.630 L3 L6 F2 H G G1 F F1 L7 L2 12/14 L5 1 2 3 L4 IRF630M - IRF630MFP 5 Revision history Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 1 Preliminary version 28-Jun-2006 2 New template, no content change 13/14 IRF630M - IRF630MFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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