L6386E High-voltage high and low side driver Features ■ High voltage rail up to 600V ■ dV/dt immunity ±50V/nsec in full temperature range ■ Driver current capability: – 400mA source, – 650mA sink SO-14 Description ■ Switching times 50/30 nsec rise/fall with 1nF load ■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down ■ Under voltage lock out on lower and upper driving section ■ Integrated bootstrap diode ■ Outputs in phase with inputs Figure 1. DIP-14 The L6386E is an high-voltage device, manufactured with the BCD "OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices. Block diagram BOOTSTRAP DRIVER Vboot 14 VCC 4 UV DETECTION UV DETECTION H.V. HVG DRIVER R R HIN SD 3 2 LEVEL SHIFTER HVG 13 S OUT VCC LOGIC 12 TO LOAD LVG LVG DRIVER LIN CBOOT 1 9 PGND 8 VREF - 5 DIAG + SGND 7 6 CIN D97IN520D October 2007 Rev 1 1/18 www.st.com 18 Contents L6386E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 3.1 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.3 Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 L6386E Electrical data 1 Electrical data 1.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vout Output voltage -3 to Vboot - 18 V Vcc Supply voltage - 0.3 to +18 V -1 to 618 V Vboot Floating supply voltage Vhvg High side gate output voltage - 1 to Vboot V Vlvg Low side gate output voltage -0.3 to Vcc +0.3 V Logic input voltage -0.3 to Vcc +0.3 V Vdiag Open drain forced voltage -0.3 to Vcc +0.3 V Vcin Comparator input voltage -0.3 to Vcc +0.3 V dVout/dt Allowed output slew rate 50 V/ns Total power dissipation (TJ = 85 °C) 750 mW Tj Junction temperature 150 °C Tstg Storage temperature -50 to 150 °C Vi Ptot Note: ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model) 1.2 Thermal data Table 2. Thermal data Symbol Rth(JA) 1.3 Parameter Thermal Resistance Junction to ambient SO-14 DIP-14 Unit 165 100 °C/W Recommended operating conditions Table 3. Symbol Recommended operating conditions Pin Parameter Test condition Min Vout 12 Output voltage (1) VBS (2) 14 Floating supply voltage (1) Switching frequency fsw Vcc TJ 4 HVG,LVG load CL = 1nF Supply voltage Junction temperature -45 Typ Max Unit 580 V 17 V 400 kHz 17 V 125 °C 1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V 2. VBS = Vboot - Vout 3/18 Pin connection 2 L6386E Pin connection Figure 2. Pin connection (Top view) LIN 1 14 Vboot SD 2 13 HVG HIN 3 12 OUT VCC 4 11 N.C. DIAG 5 10 N.C. CIN 6 9 LVG SGND 7 8 PGND D97IN521A Table 4. Pin description N° Pin Type 1 LIN I Low side driver logic input 2 SD(1) I Shut down logic input 3 HIN I High side driver logic input 4 VCC 5 DIAG O Open drain diagnostic output 6 CIN I Comparator input 7 SGND Ground 8 PGND Power ground 9 LVG (1) 10, 11 N.C. 12 OUT 13 14 HVG (1) Vboot Function Low voltage supply O Low side driver output Not connected O High side driver floating driver O High side driver output Bootstrapped supply voltage 1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA), with VCC >3V. This allows to omit the "bleeder" resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also in SD condition. 4/18 L6386E Electrical characteristics 3 Electrical characteristics 3.1 AC operation Table 5. Symbol ton toff tsd tr AC operation electrical characteristcs (VCC = 15V; TJ = 25°C) Pin High/low side driver turn-on 1,3 vs propagation delay 9,13 High/low side driver turn-off propagation delay 2 vs 9,13 Test condition Min Vout = 0V Shut down to high/low side propagation delay Typ Max Unit 110 150 ns 110 150 ns 105 150 Rise time CL = 1000pF 50 ns Fall time CL = 1000pF 30 ns 9, 13 tf 3.2 Parameter DC operation Table 6. Symbol DC operation electrical characteristcs (VCC = 15V; TJ = 25°C) Pin Parameter Test condition Min Typ Max Unit 17 V Low supply voltage section Vcc Supply voltage Vccth1 Vccth2 Vcchys 4 Vcc UV turn on threshold 11.5 12 12.5 V Vcc UV turn off threshold 9.5 10 10.5 V Vcc UV hysteresis 2 V µA Iqccu Undervoltage quiescent supply current Vcc ≤ 11V 200 Iqcc Quiescent current Vcc = 15V 250 320 µA 17 V Bootstrapped supply section Vboot Bootstrap supply voltage Vbth1 Vboot UV turn on threshold 10.7 11.9 12.9 V Vbth2 Vboot UV turn off threshold 9.5 9.9 10.7 V Vbhys Iqboot Ilk Rdson 14 Vboot UV hysteresis 2 V Vboot quiescent current HVG ON 200 µA High voltage leakage current Vhvg = Vout = Vboot = 600V 10 µA Bootstrap driver on resistance (1) Vcc ≥12.5V; Vin = 0V 125 Ω 5/18 Electrical characteristics Table 6. Symbol L6386E DC operation electrical characteristcs (continued)(VCC = 15V; TJ = 25°C) Pin Parameter Test condition Min Typ Max Unit Driving buffers section Iso 9, 13 High/low side source short circuit current VIN = Vih (tp < 10µs) 300 400 mA Isi 9, 13 High/low side sink short circuit current VIN = Vil (tp < 10µs) 500 650 mA Logic inputs Low level logic threshold voltage Vil Vih 1.5 1,2, High level logic threshold 3 voltage 3.6 Iih High level logic input current VIN = 15V Iil Low level logic input current VIN = 0V V V 50 70 µA 1 µA 10 mV Sense comparator Vio Input offset voltage Iio 6 Input bias current Vol 2 Open drain low level output voltage Vref -10 Vcin ≥ 0.5 Iod = -2.5mA Comparator reference voltage 0.46 1. RDS(on) is tested in the following way: ( V CC – V CBOOT1 ) – ( V CC – V CBOOT2 ) R DSON = -----------------------------------------------------------------------------------------------------I 1 ( V CC ,V CBOOT1 ) – I 2 ( V CC ,V CBOOT2 ) where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2 6/18 µA 0.2 0.5 0.8 V 0.54 V L6386E 3.3 Electrical characteristics Timing diagram Figure 3. Input/output timing diagram HIN LIN SD HOUT LOUT VREF VCIN DIAG D97IN522A Note: SD active condition is latched until next negative IN edge. 7/18 Bootstrap driver 4 L6386E Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6386E a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series a diode, as shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The diode connected in series to the DMOS has been added to avoid undesirable turn on of it. 4.1 CBOOT selection and charging To choose the proper CBOOT value the external MOS can be seen as an equivalent capacitor. This capacitor CEXT is related to the MOS total gate charge: Q gate C EXT = -------------V gate The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss. It has to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV. If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage losses. e.g.: HVG steady state consumption is lower than 200µA, so if HVG TON is 5ms, CBOOT has to supply 1µC to CEXT. This charge on a 1µF capacitor means a voltage drop of 1V. The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually has great leakage current). This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor. The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125 Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account. The following equation is useful to compute the drop on the bootstrap DMOS: Q gate V drop = I ch arg e R dson → V drop = ------------------- R dson T ch arg e where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor. 8/18 L6386E Bootstrap driver For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: 30nC V drop = --------------- ⋅ 125Ω ∼ 0.8V 5µs Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 4. Bootstrap driver DBOOT VS VBOOT VBOOT VS H.V. H.V. HVG HVG CBOOT VOUT TO LOAD TO LOAD LVG a CBOOT VOUT LVG b D99IN1056 9/18 Typical characteristic 5 L6386E Typical characteristic Figure 5. Typical rise and fall times vs load capacitance time (nsec) D99IN1054 250 Figure 6. Quiescent current vs supply voltage Iq (µA) 104 D99IN1057 200 Tr 103 150 Tf 100 102 50 10 0 0 1 2 3 4 5 C (nF) For both high and low side buffers @25˚C Tamb Figure 7. Turn on time vs temperature Figure 8. 4 6 8 10 12 14 16 VS(V) VBOOT UV turn on threshold vs temperature 15 250 @ Vcc = 15V 14 @ Vcc = 15V 200 13 Vbth1 (V) Ton (ns) 2 0 150 Typ. 100 12 Typ. 11 10 9 50 8 0 -45 Figure 9. -25 0 25 50 Tj (°C) 75 100 7 125 -45 0 25 50 Tj (°C) 75 100 125 Turn Off time vs temperature Figure 10. VBOOT UV turn off threshold vs temperature 15 250 @ Vcc = 15V 14 @ Vcc = 15V Vbth2 (V) 200 Toff (ns) -25 150 Typ. 100 13 12 11 10 Typ. 9 50 8 0 7 -45 10/18 -25 0 25 50 Tj (°C) 75 100 125 -45 -25 0 25 50 Tj (°C) 75 100 125 L6386E Typical characteristic Figure 11. Shutdown time vs temperature Figure 12. VBOOT UV Hysteresis 3 250 @ Vcc = 15V @ Vcc = 15V 2.5 Vbhys (V) tsd (ns0 200 150 Typ. 100 Typ. 2 1.5 50 0 -45 -25 0 25 50 Tj (°C) 75 100 1 125 Figure 13. VCC UV turn on threshold vs temperature -45 -25 0 25 50 Tj (°C) 75 100 125 Figure 14. Output source current vs temperature 15 1000 14 800 current (mA) Vccth1(V) @ Vcc = 15V 13 12 Typ. 600 Typ. 400 11 200 10 9 0 -45 -25 0 25 50 Tj (°C) 75 100 125 Figure 15. VCC UV turn off threshold vs temperature -45 -25 0 25 50 Tj (°C) 75 100 125 Figure 16. Output sink current vs temperature 12 1000 11 800 current (mA) Vccth2(V) @ Vcc = 15V 10 Typ. 9 8 7 -45 Typ. 600 400 200 -25 0 25 50 Tj (°C) 75 100 125 0 -45 -25 0 25 50 Tj (°C) 75 100 125 11/18 Typical characteristic L6386E Figure 17. VCC UV hysteresis vs 7temperature 3 Vcchys (V) 2.5 Typ. 2 1.5 1 -45 12/18 -25 0 25 50 Tj (°C) 75 100 125 L6386E 6 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 13/18 Package mechanical data L6386E Figure 18. DIP-14 mechanical data and package dimensions mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L OUTLINE AND MECHANICAL DATA 3.3 0.130 DIP14 Z 14/18 1.27 2.54 0.050 0.100 L6386E Package mechanical data Figure 19. SO-14 mechanical data and package dimensions mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 1.35 1.75 0.053 0.069 A1 0.10 0.30 0.004 0.012 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.01 D (1) 8.55 8.75 0.337 0.344 E 3.80 4.0 0.150 0.157 e 1.27 0.050 H 5.8 6.20 0.228 0.244 h 0.25 0.50 0.01 0.02 L 0.40 1.27 0.016 0.050 k ddd OUTLINE AND MECHANICAL DATA 0˚ (min.), 8˚ (max.) 0.10 0.004 (1) “D” dimension does not include mold flash, protusions or gate burrs. Mold flash, protusions or gate burrs shall not exceed 0.15mm per side. SO14 0016019 D 15/18 Order codes 7 L6386E Order codes Table 7. 16/18 Order codes Part number Package Packaging L6386E DIP-8 Tube L6386ED SO-8 Tube L6386ED013TR SO-8 Tape and reel L6386E 8 Revision history Revision history Table 8. Document revision history Date Revision 11-Oct-2007 1 Changes First release 17/18 L6386E Please Read Carefully: Information in this document is provided solely in connection with ST products. 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