STMICROELECTRONICS LM833YD

LM833
Low Noise Dual Operational Amplifier
■
Low voltage noise: 4.5nV/√Hz
■
High gain bandwidth product: 15MHz
■
High slew rate: 7V/µs
■
Low distortion: 0.002%
■
Excellent frequency stability
■
ESD protection 2kV
N
DIP8
(Plastic Package)
Description
The LM833 is a monolithic dual operational
amplifier particularly well suited for audio
applications.
D
SO8
(Plastic Micropackage)
It offers low voltage noise (4.5nV/√Hz) and high
frequency performances (15MHz Gain Bandwidth
product, 7V/µs slew rate).
In addition the LM833 has also a very low
distortion (0.002%) and excellent phase/gain
margins.
Pin Connections (top view)
Output 1
1
Inverting input 1
2
-
Non-inverting input 1
3
+
V
CC
- 4
8
VCC+
7
Output 2
-
6
Inverting input 2
+
5
Non-inverting input 2
Order Codes
Part Number
Temperature
Range
LM833N
Package
Packaging
Marking
DIP8
Tube
LM833N
S8-8
Tube or Tape & Reel
833
SO-8 (automotive grade level)
Tube or Tape & Reel
833Y
-40, +105°C
LM833D/DT
LM833YD/YDT
July 2005
-40, +125°C
Rev 2
1/9
www.st.com
9
Absolute Maximum Ratings
1
LM833
Absolute Maximum Ratings
Table 1.
Key parameters and their absolute maximum ratings
Symbol
Parameter
Value
Unit
±18 or +36
V
VCC
Supply Voltage
Vid
Differential Input Voltage - note (1)
±30
V
Vi
Input Voltage - see note 1
±15
V
Infinite
s
-40 to 105
°C
Output Short Circuit Duration
Toper
Operating Free-Air Temperature Range
Tj
Junction Temperature
+150
°C
Tstg
Storage Temperature
-65 to +150
°C
Ptot
Maximum Power Dissipation - note (2)
500
mW
2
kV
MM: Machine Model(4)
200
V
CDM: Charged Device Model
1500
V
HBM: Human Body Model(3)
ESD
1. Either or both input voltages must not exceed the magnitude of Vcc+ or Vcc-.
2. Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
3. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.
4. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5Ω), into pin to pin of device.
Table 2.
Operating conditions
Symbol
VCC
2/9
Parameter
Supply Voltage
Value
Unit
±2.5 to ±15
V
LM833
2
Typical Application Schematics
Typical Application Schematics
Figure 1.
Schematic diagram (1/2 LM833)
VCC
Output
Inverting
Input
Non-inverting
Input
VCC
3/9
Electrical Characteristics
3
LM833
Electrical Characteristics
Table 3.
Symbol
Vio
VCC+ = +15V, VCC- = -15V, Tamb = 25°C (unless otherwise specified)
Parameter
Input Offset Voltage (Rs = 10Ω, V o = 0V, Vic = 0V)
Typ.
Max.
Unit
0.3
5
mV
DVio
Input Offset Voltage Drift
Rs = 10Ω, Vo = 0V, Tmin . ≤ Tamb ≤ T max.
2
Iio
Input Offset Current (V o = 0V, Vic = 0V)
25
200
nA
Iib
Input Bias Current (V o = 0V, Vic = 0V)
300
1000
nA
Vicm
Input Common Mode Voltage Range
±12
±14
V
Avd
Large Signal Voltage Gain (RL = 2kΩ, Vo = ±10V)
90
100
dB
10
13.7
-14
13.9
-14.4
±Vopp
CMR
SVR
Output Voltage Swing (Vid = ±1V)
RL = 2.0kΩ
RL = 2.0kΩ
RL = 10kΩ
RL = 10kΩ
Common-mode Rejection Ratio (Vic = ±13V)
Supply Voltage Rejection Ratio
(V CC+ / V CC- = +15V / -15V to +5V / -5V)
12
µV/°C
-10
V
-12
80
100
dB
80
105
dB
ICC
Supply Current (V o = 0V, All amplifiers)
SR
Slew Rate (V i = -10V to +10V, RL = 2kΩ, AV = +1)
5
7
V/µs
Gain Bandwidth Product (R L = 2kΩ, CL = 100pF, f = 100kHz)
10
15
MHz
Unity Gain Bandwidth (Open loop)
9
MHz
φm
Phase Margin (RL = 2kΩ)
60
Degrees
en
Equivalent Input Noise Voltage (RS = 100Ω, f = 1kHz)
4.5
nV
-----------Hz
in
Equivalent Input Noise Current (f = 1kHz)
0.5
pA
-----------Hz
0.002
%
120
dB
120
kHz
GBP
B
THD
Total Harmonic Distortion
(R L = 2kΩ, f = 20Hz to 20kHz, V o = 3V rms, A V = +1)
VO1/V O2 Channel Separation (f = 20Hz to 20kHz)
FPB
4/9
Min.
Full Power Bandwidth (Vo = 27Vpp, RL = 2kΩ, THD ≤ 1%)
4
8
mA
LM833
Electrical Characteristics
Figure 2.
Total supply current vs. supply
voltage
Figure 3.
Output voltage vs. supply voltage
5
15
4
10
3.5
3
Output Voltage (V)
Total Supply Current (mA)
4.5
2.5
2
1.5
5
Vid = ±1V
RL = 600Ω
0
-5
1
0.5
-10
0
0
5
10
15
20
25
-15
30
0
5
Supply Voltage (V)
Figure 4.
10
15
Supply Voltage (V)
Equivalent input noise voltage vs.
frequency
Figure 5.
Output short circuit current vs.
output voltage
Output Short Circuit Current (mA)
50
VCC = ±15V, G = 100
Rs = 100, Tamb = 25°C
40
30
20
VCC = 0/30V
Tamb = 25°C
10
0
-10
-20
-30
-40
0
10
20
30
Output Voltage (V)
Figure 6.
Output voltage vs. supply voltage
Figure 7.
THD+ noise vs. frequency
15
1
THD+Noise (%)
Output Voltage (V)
10
5
Vid = ±1V
RL = 2kΩ
0
-5
-10
0.1
RL = 2kΩ, Vo = 3Vrms
VCC = ±15V, Av = 1
0.01
0.001
0.01
-15
0
5
10
15
0.1
1
10
100
Frequency (kHz)
Supply Voltage (V)
5/9
Electrical Characteristics
Figure 8.
LM833
Voltage gain and phase vs.
frequency
Figure 9.
THD + noise vs. Vout
180
50
1.000
40
phase
120
20
60
10
0
0
-10
RL = 2kΩ, CL = 100pF
VCC = ±15V, G = -100
-20
Phase (Deg)
Gain (dB)
gain
THD+Noise (%)
30
RL = 2kΩ, f = 1kHz
VCC = ±15V, Av = 10
0.100
0.010
-60
0.001
-30
10
100
1000
Frequency (kHz)
6/9
10000
-120
100000
1
2
3
4
5
6
Vout (Vrms)
7
8
9
10
LM833
4
Package Mechanical Data
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages.
These packages have a Lead-free second level interconnect. The category of second level
interconnect is marked on the package and on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com.
4.1
DIP-8 Package
Plastic DIP-8 MECHANICAL DATA
mm.
inch
DIM.
MIN.
A
TYP
MAX.
MIN.
3.3
0.7
B
1.39
1.65
0.055
B1
0.91
1.04
0.036
b1
MAX.
0.130
a1
b
TYP.
0.028
0.5
0.38
0.041
0.020
0.5
D
0.065
0.015
0.020
9.8
0.386
E
8.8
0.346
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
7.1
0.280
I
4.8
0.189
L
Z
3.3
0.44
0.130
1.6
0.017
0.063
P001F
7/9
Package Mechanical Data
4.2
LM833
SO-8 Package
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.04
0.010
A2
1.10
1.65
0.043
0.065
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
e
1.27
0.157
0.050
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
k
ddd
8˚ (max.)
0.1
0.04
0016023/C
8/9
LM833
5
Revision History
Revision History
Date
Revision
Changes
Nov. 2001
1
Initial release.
July 2005
2
1 - PPAP references inserted in the datasheet see Table on page 1.
2 - ESD protection inserted in Table 1 on page 2
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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