MJE172 MJE182 ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier and low current, high speed switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CEO V CBO V EBO IC I CM IB P tot T stg Tj Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (I E = 0) Base-Emitter Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Total Power Dissipation at T case ≤ 25 o C Value MJE182 MJE172 80 100 7 3 6 1 12.5 -65 to 150 150 Unit V V V A A A W o C o C For PNP type voltage and current values are negative. September 2003 1/4 MJE172 - MJE182 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max o 83.4 10 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter V CB = rated V CBO T case = 150 o C 0.1 0.1 µA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 0.1 µA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 10 mA Min. Typ. 80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 0.5 A I C = 1.5 A IC = 3 A I B = 50 mA I B = 0.15 A I B = 0.6 A 0.3 0.9 1.7 V V V V BE(sat) ∗ Base-Emitter on Voltage I C = 1.5 A IC = 3 A I B = 0.15 A I B = 0.6 A 1.5 2 V V BE ∗ Base-Emitter on Voltage I C = 0.5 A V CE = 1 V 1.2 V h FE DC Current Gain I C = 0.1 A I C = 0.5 A I C = 1.5 A V CE = 1 V V CE = 1 V V CE = 1 V 50 30 12 Transistor Frequency I C = 0.1 A f = 10 MHz V CE = 10 V 50 Collector-base Capacitance V CB = 10 V for MJE172 for MJE182 fT C CBO ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5% For PNP type voltage and current values are negative. 2/4 IE = 0 250 MHz f = 0.1MHz 60 40 pF pF MJE172 - MJE182 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 7.4 7.8 0.291 TYP. MAX. 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 I 1.27 0.084 0.05 O 0.3 0.011 V 10o 10o 1: Base 2: Collector 3: Emitter 0016114/B 3/4 MJE172 - MJE182 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4