STMICROELECTRONICS SD3931-10

SD3931-10
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
TARGET DATA
• GOLD METALLIZATION
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 150 W MIN. WITH 21.7 dB GAIN @
150 MHz
M174
epoxy sealed
DESCRIPTION
The SD3931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. It is intended
for use in 100 V dc large signal applications up to
150 MHz.
ORDER CODE
SD3931-10
BRANDING
SD3931-10
PIN CONNECTION
4
1
3
2
1. Drain
2. Source
3. Gate
4. Source
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
V(BR)DSS
VDGR
VGS
ID
PDISS
Tj
TSTG
Parameter
Value
Unit
Drain Source Voltage
250
V
Drain-Gate Voltage (RGS = 1MΩ)
250
V
Gate-Source Voltage
±20
V
Drain Current
10
A
Power Dissipation
437
W
Max. Operating Junction Temperature
Storage Temperature
200
°C
-65 to +150
°C
0.4
°C/W
THERMAL DATA
Rth(j-c)
May, 27 2003
Junction -Case Thermal Resistance
1/5
SD3931-10
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VDS = 100 V
5
mA
IGSS
VGS = 20 V
VDS = 0 V
5
µA
VGS(Q)
VDS = 10 V
ID = 250 mA
4.0
V
VDS(ON)
VGS = 10 V
ID = 5 A
5
V
250
V
1.5
GFS
VDS = 10 V
ID = 2.5 A
CISS
VGS = 0 V
VDS = 100 V
f = 1 MHz
649
pF
COSS
VGS = 0 V
VDS = 100 V
f = 1 MHz
134
pF
CRSS
VGS = 0 V
VDS = 100 V
f = 1 MHz
6
pF
3
mho
DYNAMIC
Symbol
Test Conditions
Min.
POUT
VDD = 100 V
IDQ = 0.2 A
GPS
VDD = 100 V
IDQ = 0.2 A
POUT = 150 W
f = 150 MHz
VDD = 100 V
IDQ = 0.2 A
POUT = 150 W
f = 150 MHz
VDD = 100 V IDQ = 0.2 A
All Phase Angles
POUT = 150 W
f = 150 MHz
ηD
Load
Mismatch
f = 150 MHz
Typ.
150
21.7
dB
TBD
%
10:1
VSWR
D
ZDL
Typical Drain
Load Impedance
G
Zin
S
IMPEDANCE DATA
FREQ. MHz
ZIN (Ω)
ZDL(Ω)
150
0.42 - j 3.1
3.4 + j 5.5
2/5
Unit
W
IMPEDANCES SCHEME
Typical Input
Impedance
Max.
SD3931-10
TYPICAL PERFORMANCE
Input Return Loss Vs Output Power
Power Gain Vs Output Power
24.0
0
23.5
Idq = 0.3 A
Idq = 0.5 A
23.0
-5
Idq = 1 A
22.5
Idq = 1 A
RL (dB)
Gp (dB)
22.0
21.5
21.0
-10
Idq = 0.2 A
Idq = 0.2 A
20.5
-15
Idq = 0.1 A
20.0
f =150 MHz
Vds=100 V
19.5
f =150 MHz
Vds = 100 V
19.0
-20
0
50
100
150
200
250
0
50
100
Pout (W)
150
200
250
Pout (W)
Efficiency Vs Output Power
Output Power Vs Input Power
60
250
55
Idq = 0.2 A
50
200
45
Idq = 1 A
Pout (W)
nd (%)
40
35
30
150
Idq = 1 A
Idq = 0.2 A
100
25
20
50
f =150 MHz
Vds = 100 V
f =150 MHz
Vds = 100 V
15
10
0
0
50
100
150
200
250
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Pin (W)
Pout (W)
Drain Current Vs Gate-Source Voltage
14
12
Ids (A)
10
8
6
4
2
Vds = 16 V
0
0
1
2
3
4
5
6
7
Vgs (V)
3/5
SD3931-10
M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICAL DATA
mm
DIM.
A
MIN.
5.56
B
MAX
MIN.
5.584
0.219
3.18
TYP.
MAX
0.230
0.125
C
6.22
6.48
0.245
0.255
D
18.28
18.54
0.720
0.730
E
3.18
0.125
F
24.64
24.89
0.970
0.980
G
12.57
12.83
0.495
0.505
H
0.08
0.18
0.003
0.007
I
2.11
3.00
0.083
0.118
J
3.81
4.45
0.150
0.175
K
7.11
0.280
L
25.53
26.67
1.005
1.050
M
3.05
3.30
0.120
0.130
Controlling Dimension in Inches
4/5
TYP.
Inch
1011000D
SD3931-10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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