ST1802FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NEW SERIES, ENHANCHED PERFORMANCE EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION (U.L. COMPLIANT) CREEPAGE DISTANCE PATH > 4 mm TO-220FH APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOR TV DESCRIPTION The device is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) 1500 V V CEO Collector-Emitter Voltage (I B = 0) 600 V V EBO Emitt er-Base Voltage (I C = 0) 7 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 15 A 4 A IC I CM IB Parameter Base Current P t ot Total Dissipation at T c = 25 o C T stg St orage Temperature Tj August 2001 Max. Operating Junction T emperature 40 W -65 to 150 o C 150 o C 1/6 ST1802FH THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 3.125 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 7 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . o Tj = 125 C I C = 100 mA L = 25 mH Max. Un it 1 2 mA mA 1 mA 600 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 4 A IC = 4 A IB = 0.8 A IB = 1.2 A 5 1.5 V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 4.5 A IB = 1 A 1.2 V DC Current G ain IC = 1 A IC = 5 A V CE = 5 V V CE = 5 V IC = 4 A L B = 5 µH f = 16 KHz IBon (END) = 1 A V BB = -2.5 V h FE∗ ts tf INDUCTIVE LOAD Storage Time Fall Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/6 Thermal Impedance 25 4 9 5 0.3 6 0.5 µs µs ST1802FH Derating Curve Base Emitter Saturation Voltage Collector Emitter Saturation Voltage DC Current Gain Power Losses At 16 KHz Switching Time Inductive Load 3/6 ST1802FH Reverse Biased SOA Inductive Load Switching Test Circuits. 4/6 ST1802FH TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 16 L3 28.6 L4 9.8 L5 0.409 0.630 30.6 1.126 10.6 0.385 3.4 1.204 0.417 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 5/6 ST1802FH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6