STMICROELECTRONICS STA501

STA501
40V 3.5A DOUBLE POWER HALF BRIDGE
■
MINIMUM INPUT OUTPUT PULSE WIDTH
DISTORTION
■
200mΩ RdsON COMPLEMENTARY DMOS
OUTPUT STAGE
■
CMOS COMPATIBLE LOGIC INPUTS
■
THERMAL PROTECTION
■
THERMAL WARNING OUTPUT
■
UNDER VOLTAGE PROTECTION
MULTIPOWER BCD TECHNOLOGY
PowerSO36
ORDERING NUMBER: STA501
DESCRIPTION
STA501 is a monolithic dual half bridge stage in Multipower BCD Technology.
The device is particularly designed to make the output stage of a mono All-Digital High Efficiency
(DDX™) amplifier capable to deliver 50W @ THD =
10% at Vcc 30V output power on 8Ω load. The input
pins have threshold proportional to Ibias pin voltage.
AUDIO APPLICATION CIRCUIT
+3.3V
PWRDN
R57
10K
R59
10K
23
CONFIG
24
PWRDN
25
FAULT
27
26
15
14
PROTECTIONS
&
LOGIC
12
13
TRI-STATE
C58
100nF
TH_WAR
C58
100nF
IBIAS
C53
100nF
C60
100nF
TH_WAR
28
VDD
21
VDD
22
VSS
33
VSS
34
30
REGULATORS
C30
1µF
GND
GND
16
N.C.
17
N.C.
7
VCCA
INA
GND-Reg
GND-Clean
9
36
M15
31
20
19
M16
INB
INB
C32
1µF
GNDSUB
6
GNDA
4
VCCB
10
N.C.
11
OUTB
OUTB
M14
C110
100nF
C109
330pF R103
6
C33
1µF
3
1
N.C.
L113 22µH
OUTA
OUTA
2
32
C31
1µF
GND
8
35
C55
1000µF
GND
VCCB
M17
VCCSIGN
VCCSIGN
INA
29
+VCC
VCC
5
R104
20
R102
6
C107
100nF
C108
470nF
C106
100nF
C111
100nF
L112 22µH
GNDB
D02AU1447
December 2003
1/8
STA501
PIN FUNCTION
N°
Pin
1
GND-SUB
35 ; 36
Vcc Sign
15
Vcc
Positive Supply
12
Vcc
Positive Supply
7
Vcc
Positive Supply
4
Vcc
Positive Supply
14
GND
Negative Supply
13
GND
Negative Supply
6
GND
Negative Supply
5
GND
Negative Supply
16 ; 17
N.C.
10 ; 11
N.C.
8;9
OUTA
Output half bridge
2;3
OUTB
Output half bridge
29
GND
30
GND
31
INA
Input of half bridge
32
INB
Input of half bridge
21 ; 22
Vdd
5V Regulator referred to ground
33 ; 34
Vss
5V Regulator referred to +Vcc
25
PWRDN
26
TRI-STATE
27
FAULT
24
GND
28
TH-WAR
19
GND-clean
23
IBIAS
18
NC
20
GND-Reg
2/8
Description
Substrate ground
Signal Positive Supply
Stand-by pin
Hi-Z pin
Fault pin advisor
Thermal warning advisor
Logical ground
High logical state setting voltage
Not connected
Ground for regulator Vdd
STA501
FUNCTIONAL PIN STATUS
PIN NAME
Logical value
IC -STATUS
FAULT
0
Fault detected (Short circuit, or Thermal ..)
FAULT *
1
Normal Operation
TRI-STATE
0
All powers in Hi-Z state
TRI-STATE
1
Normal operation
PWRDN
0
Low absorpion
PWRDN
1
Normal operation
THWAR
0
Temperature of the IC =130C
THWAR*
1
Normal operation
* : The pin is open collector. To have the high logic value, it needs to be pulled up by a resistor.
PIN CONNECTION
VCCSign
36
1
GND-SUB
VCCSign
35
2
OUTB
VSS
34
3
OUTB
VSS
33
4
VCC
INB
32
5
GND
INA
31
6
GND
GND
30
7
VCC
GND
29
8
OUTA
TH_WAR
28
9
OUTA
FAULT
27
10
N.C
TRI-STATE
26
11
N.C.
PWRDN
25
12
VCC
GND
24
13
GND
IBIAS
23
14
GND
VDD
22
15
VCC
VDD
21
16
N.C.
GND-Reg
20
17
N.C.
GND-Clean
19
18
N.C.
D02AU1449
3/8
STA501
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCE
DC Supply Voltage (Pin 4,7,12,15)
40
V
Vmax
Maximum Voltage on pins 23 to 32
5.5
V
0 to 70
°C
-40 to 150
°C
Top
Tstg, Tj
Operating Temperature Range
Storage and Junction Temperature
THERMAL DATA
Symbol
Tj-case
Parameter
Min.
Typ.
Thermal Resistance Junction to Case (thermal pad)
Max.
Unit
2.5
°C/W
TjSD
Thermal shut-down junction temperature
150
°C
Twarn
Thermal warning temperature
130
°C
thSD
Thermal shut-down hysteresis
25
°C
ELECTRICAL CHARACTERISTCS (Ibias = 3.3V; Vcc = 30V; Tamb = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
200
270
mΩ
50
µA
RdsON
Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
Idss
Power Pchannel/Nchannel
leakage Idss
Vcc=35V
gN
Power Pchannel RdsON
Matching
Id=1A
95
%
gP
Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s
Low current Dead Time (static)
see test circuit no.1; see fig. 1
Dt_d
20
ns
High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8 Ω
Id=3.5A; see fig. 3
50
ns
td ON
Turn-on delay time
Resistive load
100
ns
td OFF
Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load
25
ns
tf
Fall time
Resistive load; as fig. 1
25
ns
36
V
Ibias/2
+300mV
V
VCC
Supply voltage operating voltage
VIN-H
High level input voltage
VIN-L
Low level input voltage
IIN-H
Hi level Input current
4/8
10
10
Ibias/2
-300mV
Pin voltage = Ibias
V
1
µA
STA501
ELECTRICAL CHARACTERISTCS (continued)
Symbol
IIN-L
Parameter
Test conditions
Low level input current
Min.
Pin voltage = 0.3V
IPWRDN-H Hi level PWRDN pin input current
Ibias = 3.3V
Typ.
Max.
Unit
1
µA
35
µA
VL
Low logical state voltage VL (pin
PWRDN, TRISTATE) (note 1)
Ibias = 3.3V
VH
High logical state voltage VH (pin
PWRDN, TRISTATE) (note 1)
Ibias = 3.3V
1.7
V
IVCCPWRDN
Supply Current from Vcc in Power
Down
PWRDN = 0
3
mA
IFAULT
Output Current pins
FAULT -TH-WARN when
FAULT CONDITIONS
IVCC-hiz
0.8
Vpin = 3.3V
V
1
mA
Supply current from Vcc in Tristate
Vcc=30V; Tri-state=0
22
mA
IVCC
Supply current from Vcc in
operation
(both channel switching)
Input pulse width = 50% Duty;
Switching Frequency = 384Khz;
No LC filters;
50
mA
Iout-sh
Overcurrent protection threshold
(short circuit current limit)
VUV
tpw-min
3.5
Undervoltage protection threshold
Output minimum pulse width
6
8
A
7
No Load
70
V
150
ns
Notes: 1. The following table explains the VL, VH variation with Ibias
Ibias
VLmin
VHmax
Unit
2.7
0.7
1.5
V
3.3
0.8
1.7
V
5
0.85
1.85
V
LOGIC TRUTH TABLE (see fig. 2)
TRI-STATE
INA
INB
Q1
Q2
Q3
Q4
OUTPUT
MODE
0
x
x
OFF
OFF
OFF
OFF
Hi-Z
1
0
0
OFF
OFF
ON
ON
DUMP
1
0
1
OFF
ON
ON
OFF
NEGATIVE
1
1
0
ON
OFF
OFF
ON
POSITIVE
1
1
1
ON
ON
OFF
OFF
Not used
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STA501
Figure 1. Test Circuit.
OUTY
Vcc
(3/4)Vcc
Low current dead time = MAX(DTr,DTf)
(1/2)Vcc
(1/4)Vcc
+Vcc
t
DTr
Duty cycle = 50%
DTf
M58
OUTY
INY
R 8Ω
M57
V67 =
vdc = Vcc/2
+
-
gnd
D02AU1448
Figure 2.
+VCC
Q1
Q2
OUTA
INA
OUTB
Q3
INB
Q4
GND
D02AU1450
Figure 3.
High Current Dead time for Bridge application = ABS(DTout(A)-DTin(A))+ABS(DTOUT(B)-DTin(B))
+VCC
Duty cycle=A
Duty cycle=B
DTout(A)
M58
DTin(A)
Q2
Q1
Rload=8Ω
OUTA
INA
Iout=3.5A
M57
Q3
DTout(B)
L67 22µ
C69
470nF
L68 22µ
C71 470nF
C70
470nF
DTin(B)
OUTB
INB
Iout=3.5A
Q4
Duty cycle A and B: Fixed to have DC output current of 3.5A in the direction shown in figure
6/8
M64
M63
D02AU1451
STA501
DIM.
A
A2
A4
A5
a1
b
c
D
D1
D2
E
E1
E2
E3
E4
e
e3
G
H
h
L
N
s
MIN.
3.25
mm
TYP.
0.8
MAX.
3.5
3.3
1
MIN.
0.128
0.075
0.38
0.32
16
9.8
0
0.008
0.009
0.622
0.37
14.5
11.1
2.9
6.2
3.2
0.547
0.429
0.031
0.2
0
0.22
0.23
15.8
9.4
5.8
2.9
0.8
OUTLINE AND
MECHANICAL DATA
0.003
0.015
0.012
0.630
0.38
0.039
0.57
0.437
0.114
0.244
1.259
0.228
0.114
0.65
11.05
0
15.5
MAX.
0.138
0.13
0.039
0.008
1
13.9
10.9
inch
TYP.
0.026
0.435
0.075
0
15.9
0.61
1.1
1.1
0.031
10˚ (max)
8˚ (max)
0.003
0.625
0.043
0.043
PowerSO36 (SLUG UP)
(1) “D and E1” do not include mold flash or protusions.
Mold flash or protusions shall not exceed 0.15mm (0.006”)
(2) No intrusion allowed inwards the leads.
7183931
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STA501
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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