STMICROELECTRONICS STB24NF10_06

STB24NF10
STP24NF10
N-channel 100V - 0.0055Ω - 26A - TO-220 - D²PAK
Low gate charge STripFET™ II Power MOSFET
General features
■
Type
VDSS
RDS(on)
ID
STB24NF10
STP24NF10
100V
100V
<0.060Ω
<0.060Ω
26A
26A
Exceptional dv/dt capability
3
3
1
■
100% avalanche tested
■
Application oriented characterization
D²PAK
1
2
TO-220
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize the
on-resistance. It is therefore suitable as primary
switch in advanced high-efficiency,high-frequency
isolated DC-DC converters for Telecom and
Computer application. It is also intended for any
applications with low gate drive requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STP24NF10
P24NF10
TO-220
Tube
STB24NF10
B24NF10
D²PAK
Tape & reel
August 2006
Rev 7
1/14
www.st.com
14
Contents
STB24NF10 - STP24NF10
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
STB24NF10 - STP24NF10
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VDGR
Drai-gate voltage (RGS=20kΩ)
100
V
Gate-source voltage
± 20
V
VGS
ID
Drain current (continuous) at TC = 25°C
26
A
ID
Drain current (continuous) at TC=100°C
18
A
Drain current (pulsed)
104
A
Total dissipation at TC = 25°C
85
W
0.57
W/°C
9
V/ns
IDM
(1)
PTOT
Derating factor
dv/dt
(2)
Peak diode recovery voltage slope
EAS(3)
Single pulse avalanche energy
220
mJ
TJ
Operating junction temperature
Storage temperature
-55 to 175
°C
Value
Unit
Tstg
1. Pulse width limited by safe operating area.
2. ISD < 24A, di/dt < 300A/µs, VDD=80%V(BR)DSS
3. Starting Tj = 25°C, ID=12A, VDD=30V
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case
Thermal resistance junction-case Max
1.76
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
Maximum lead temperature for soldering purpose
300
°C
Tj
3/14
Electrical characteristics
2
STB24NF10 - STP24NF10
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 12A
Symbol
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
Typ.
Max.
100
1
10
µA
µA
±100
nA
3
4
V
0.055
0.060
Ω
Typ.
Max.
Unit
VDS = Max rating @125°C
2
Unit
V
VDS = Max rating,
IDSS
Table 4.
Min.
Dynamic
Parameter
Test conditions
Min.
Forward transconductance
VDS = 15V, ID = 12A
10
S
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
870
125
50
pF
pF
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 80V, ID = 24A
30
6
10
VGS =10V
(see Figure 7)
41
nC
nC
nC
Max.
Unit
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
td(on)
tr
td(off)
tf
4/14
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=50V, ID= 12A,
RG=4.7Ω, VGS=10V
(see Figure 12)
Min.
Typ.
60
15
50
20
ns
ns
ns
ns
STB24NF10 - STP24NF10
Table 6.
Symbol
Electrical characteristics
Source drain diode
Max
Unit
Source-drain current
26
A
ISDM(1)
Source-drain current (pulsed)
104
A
VSD(2)
Forward on voltage
1.5
V
ISD
trr
Qrr
IRRM
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min
Typ.
ISD= 24A, VGS=0
ISD= 24A,
di/dt = 100A/µs,
VDD= 30V, Tj=150°C
(see Figure 14)
100
375
7.5
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/14
Electrical characteristics
STB24NF10 - STP24NF10
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Trasconductance
Figure 6.
Static drain-source on resistance
6/14
STB24NF10 - STP24NF10
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/14
Test circuit
3
STB24NF10 - STP24NF10
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/14
Figure 17. Switching time waveform
STB24NF10 - STP24NF10
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STB24NF10 - STP24NF10
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/14
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STB24NF10 - STP24NF10
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
10.4
0.393
D1
E
8
10
E1
0.315
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
R
0º
0.126
0.015
4º
3
V2
0.4
1
11/14
Packaging mechanical data
5
STB24NF10 - STP24NF10
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
12/14
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB24NF10 - STP24NF10
6
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
09-Sep-2004
6
Complete version
09-Aug-2006
7
New template, no content change
13/14
STB24NF10 - STP24NF10
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