STC08IE150HV Emitter switched bipolar transistor ESBT® 1500V - 8A - 0.08 Ω Features VCS(ON) IC RCS(ON) 0.65 V 8A 0.08 Ω ■ High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V ■ Very low CISS driven by RG = 4.7 Ω ■ Very low turn-off cross over time 1 ■ Aux SMPS for three phase mains ■ PFC 4 TO247-4L HV Figure 1. Application 23 Internal schematic diagrams Description The STC08IE150HV is manufactured in monolithic ESBT technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in gate driven based topologies. Table 1. Device summary Part number Marking Package Packaging STC08IE150HV C08IE150HV TO247-4L HV Tube November 2007 Rev 3 1/11 www.st.com 11 Contents STC08IE150HV Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STC08IE150HV 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 1500 V VCS(SS) Collector-source voltage (VBS =VGS =0) VBS(OS) Base-source voltage (IC =0, VGS =0) 30 V VSB(OS) Source-base voltage (IC =0, VGS =0) 17 V ± 17 V Collector current 8 A Collector peak current (tP < 1 ms) 24 A Base current 8 A IBM Base peak current (tP < 1 ms) 12 A Ptot Total dissipation at Tc ≤ 25°C 208 W Tstg Storage temperature -40 to 150 °C 125 °C Value Unit 0.6 °C/W VGS IC ICM IB TJ Table 3. Symbol Gate-source voltage Max. operating junction temperature Thermal data Parameter Rthj-case Thermal resistance junction-case max 3/11 Electrical characteristics 2 STC08IE150HV Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICS(SS) Collector-source cut-off VCS =1500 V current (VBS =VGS =0) 100 µA IBS(OS) Base-source cut-off current (IC =0, VGS =0) VBS =30 V 10 µA ISB(OS) Source-base cut-off current (IC =0, VGS =0) VSB =17 V 100 µA IGS(OS) Gate-source cut-off current (IC=0; VBS =0) VGS = ± 17 V 100 nA VCS(ON) Collector-source on voltage VGS =10 V IC =3 A IB =0.3 A VGS =10 V IC =8 A IB =1.6 A 1.2 1.5 V V 1 1.7 1.5 2 V V 3 4 V hFE DC current gain VGS =10 V VCS =1 V IC =3 A 9 14 VGS =10 V VCS =1 V IC =8 A 4.5 6.8 VBS(ON) Base-source on voltage VGS =10 V IC =3 A IB =0.3 A VGS =10 V IC =8 A IB =1.6 A VGS(th) Gate threshold voltage VBS =VGS IB =250 µA VCS =25 V f =1 MHz Ciss QGS(tot) ts tf ts tf Input capacitance Gate-source charge 0.3 0.65 810 pF 45 nC tp =4 µs 690 ns IB =0.8 A 10 ns tp =4 µs 340 ns IB =0.4 A 10 ns 2.8 V VGS=VCB=0 VCS=25 V VGS=10 V VCB=0 IC =4 A RG =4.7 Ω VGS =10 V Inductive load Storage time Fall time Vclamp =1200V Inductive load Storage time Fall time Vclamp =1200 V 2 IC =4 A RG =4.7 Ω VGS =10 V IC =4 A VCC =Vclamp =600 V VCS(dyn) Collector-source dynamic voltage (500 ns) VGS =10 V IB = 0.4 A t(peak) =500 ns 4/11 IC =2 A RG =4.7 Ω IB(peak) =4 A STC08IE150HV Table 4. Symbol VCS(dyn) VCSW Electrical characteristics Electrical characteristics (continued) Parameter Collector-source dynamic voltage (1 µs) Test conditions Min. VCC =Vclamp =600 V IC =2 A VGS =10 V RG =4.7 Ω IB = 0.4 A IB(peak) =4 A t(peak) =500 ns Maximum collectorsource voltage switched RG =4.7 Ω without snubber hFE = 5 IC = 8 A 1500 Typ. 1.7 Max. Unit V V 5/11 Electrical characteristics 2.1 6/11 STC08IE150HV Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Gate threshold voltage vs temperature Figure 4. Reverse biased safe operating area Figure 5. DC current gain Figure 6. Collector-source voltage @hFE= 5 Figure 7. Collector-source voltage @hFE= 10 STC08IE150HV Figure 8. Electrical characteristics Base-source voltage @hFE= 5 Figure 9. Base-source voltage @hFE= 10 Figure 10. Inductive load switching time Figure 11. Inductive load switching time @hFE= 5 @hFE= 10 Figure 12. Dynamic collector-source voltage 7/11 Package mechanical data 3 STC08IE150HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STC08IE150HV Package mechanical data TO247-4L HV MECHANICAL DATA DIM. mm. MIN. A 4.85 A1 2.20 A2 b 0.95 2.50 c 0.40 D 23.85 D1 e 2.54 5.08 L 10.20 L1 2.20 L2 2.60 1.10 1.30 2.90 0.80 24 24.15 15.60 15.75 10.80 2.50 2.80 18.50 L3 S 5.15 2.50 21.50 15.45 e1 P MAX. 1.27 b2 E TYP 3 3.55 3.65 5.50 7734874 9/11 Revision history 4 STC08IE150HV Revision history 26 Table 5. 10/11 Document revision history Date Revision Changes 30-Jan-2006 1 First release 01-Dec-2006 2 The document has been reformatted, no content change 22-Nov-2007 3 Document status promoted from preliminary data to datasheet. Added Section 2.1: Electrical characteristics (curves) STC08IE150HV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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