STC5DNF30V Dual N-channel 30V - 0.032Ω - 4.5A - TSSOP8 2.7V-Driver STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STC5DNF30V 30V < 0.035Ω (@4.5V) < 0.040Ω (@2.7V) 4.5A ■ Standard outline for easy automated surface mount assembly ■ Ultra low threshold gate drive (2.7V) TSSOP8 Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. No electrical connections are shared between mosfets. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STC5DNF30V C5DNF30V TSSOP8 Tape & reel April 2006 Rev 1 1/12 www.st.com 12 Contents STC5DNF30V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STC5DNF30V 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate- source voltage ±8 V Drain current (continuous) at TC = 25°C 4.5 A ID (1) Drain current (continuous) at TC = 100°C 2.8 A IDM(2) Drain current (pulsed) 18 A Total dissipation at tc = 25°C 1.3 W Value Unit 120 97.5 °C/W °C/W -55 to 150 -55 to 150 °C °C ID (1) PTOT 1. Parameter (1) When mounted on FR-4 board with 1inch² pad, 2 Oz of Cu and t<10sec. 2. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter Rthj-pcb(1) Thermal resistance junction-pcb max Rthj-pcb(2) Thermal resistance junction-pcb max Tj Tstg Operating junction temperature Storage temperature 1. When mounted on minimum recommended footprint. 2. When mounted on FR-4 board with 1inch² pad, 2 Oz of Cu and t<10sec. 3/12 Electrical characteristics 2 STC5DNF30V Electrical characteristics (TJ =25°C unless otherwise specified) Table 3. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250µA, V GS = 0 IDSS Zero gate voltage drain current (V GS = 0) VDS = Max rating VDS = Max rating,TC=125°C IGSS Gate-body leakage current (V DS = 0) VGS = ± 8V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on VGS = 4.5V, ID = 2.3A resistance VGS = 2.7V, ID = 2.3A V(BR)DSS Table 4. Symbol Min. Typ. 1 10 µA µA ±100 nA 0.6 V 0.032 0.036 0.035 0.040 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. 9.5 Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 460 200 50 Qg Q gs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 16V, ID = 4.5A, VGS = 4.5V (see Figure 14) Symbol Unit V VDS =25V ; ID = 2.3A Table 5. Max. 30 Forward transconductance gfs 4/12 On/off 8.5 S pF pF pF 11.5 ns 1.8 ns 2.4 ns Switching times Parameter Test conditions td(on) tr td(off) tr Turn-on delay time Rise time Turn-off delay time Fall time VDD = 10V, ID = 2.3A, RG= 4.7Ω V GS = 4.5V (see Figure 13) tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 16V, ID = 2.3A, RG = 4.7Ω, V GS = 4.5V (see Figure 17) Min. Typ. Max. Unit 7 33 27 10 ns ns ns ns 26 ns 11 ns 21 ns STC5DNF30V Electrical characteristics Table 6. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 4.5A, VGS = 0 ISD = 4.5A, di/dt =100A/µs, Reverse recovery time Reverse recovery charge VDD = 10V, T j = 150°C Reverse recovery current (see Figure 15) 26 13 1 Max. Unit 4.5 18 A A 1.2 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 5/12 Electrical characteristics 2.1 6/12 STC5DNF30V Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance STC5DNF30V Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate thereshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Thermal resistance and max power 7/12 Test circuits 3 STC5DNF30V Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 STC5DNF30V 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STC5DNF30V TSSOP8 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 1.05 1.20 0.041 0.047 A1 0.05 0.15 0.002 0.006 A2 0.80 1.05 0.032 0.041 b 0.19 0.30 0.008 c 0.127 0.012 0.005 D 2.90 3.10 0.114 E 4.30 4.50 0.170 0.177 E1 6.20 6.60 0.240 0.260 E2 5.14 5.24 0.202 e 0.65 0.122 0.206 0.025 L 0.45 0.75 0.018 0.030 L1 0.90 1.10 0.0355 0.0433 R 0.09 0.004 R1 0.09 0.004 θ1 0° θ2 10/12 TYP 8° 0° 12° 8° STC5DNF30V 5 Revision history Revision history Table 7. Date Revision 11-Apr-2006 1 Changes First release 11/12 STC5DNF30V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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