STD15NF10 N-channel 100V - 0.060Ω - 23A - DPAK Low gate charge STripFET™ II Power MOSFET General features Type VDSSS RDS(on) ID STD15NF10 100V <0.065Ω 23A 3 1 ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization DPAK Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD15NF10T4 D15NF10 DPAK Tape & reel August 2006 Rev 3 1/13 www.st.com 13 Contents STD15NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STD15NF10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 100 V Drain-gate voltage (RGS = 20KΩ) 100 V Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 23 A ID Drain current (continuous) at TC=100°C 16 A Drain current (pulsed) 92 A Total dissipation at TC = 25°C 70 W Derating factor 0.46 W/°C Single pulse avalanche energy 180 mJ 9 V/ns -55 to 175 °C Value Unit IDM (1) PTOT EAS (2) dv/dt (3) Peak diode recovery voltage slope Tstg TJ Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. Starting TJ = 25 oC, ID = 10A, VDD = 30V 3. ISD ≤13A, di/dt ≤300 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max 2.14 °C/W RthJA Thermal resistance junction-ambient Max 100 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/13 Electrical characteristics 2 STD15NF10 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 3. Symbol V(BR)DSS 1. On(1) /off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS = 0 Min. Typ. 100 IDSS IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 12A 1 10 µA µA ±100 nA 3 4 V 0.06 0.065 Ω Typ. Max. Unit VDS = Max rating, TC = 125°C 2 Unit V VDS = Max rating Zero gate voltage drain current (VGS = 0) Max. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Test conditions Min. Forward transconductance VDS = 15V, ID = 7.5A 12 S Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 870 125 50 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 24A VGS = 10V 30 6 10 21 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 30V, ID = 12A, RG = 4.7Ω, VGS = 10V Figure 12 on page 8 Min. 60 45 49 17 ns ns ns ns STD15NF10 Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 23 A ISDM (1) Source-drain current (pulsed) 92 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD = 20A, VGS = 0 ISD = 24A, di/dt = 100A/µs, VDD = 30V, TJ = 150°C Figure 14 on page 8 100 375 7.5 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STD15NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STD15NF10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STD15NF10 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 STD15NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STD15NF10 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 10/13 STD15NF10 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 MIN. MAX. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 0.065 0.073 1.574 16.3 0.618 0.641 11/13 Revision history 6 STD15NF10 Revision history Table 7. 12/13 Revision history Date Revision Changes 09-Sep-2004 4 Complete document 08-Aug-2006 5 New template, updated SOA STD15NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13