STMICROELECTRONICS STD50NH02LT4

STD50NH02L
STD50NH02L-1
N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK
STripFET™ III Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STD50NH02L-1
24V
<0.0105Ω
50A
STD50NH02L
24V
<0.0105Ω
50A
■
Logic level device
■
RDS(ON) * Qg Industry’s benchmark
■
Conduction losses reduced
■
Switching losses reduced
■
Low threshold drive
3
3
2
1
iPAK
1
DPAK
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STD50NH02L-1
D50NH02L
IPAK
Tube
STD50NH02LT4
D50NH02L
DPAK
Tape & reel
July 2006
Rev 7
1/16
www.st.com
16
Contents
STD50NH02L - STD50NH02L-1
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
................................................ 8
STD50NH02L - STD50NH02L-1
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Vspike (1)
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage rating
30
V
Drain-source voltage (VGS = 0)
24
V
Drain-gate voltage (RGS = 20 kΩ)
24
V
± 20
V
Gate- source voltage
ID
Drain current (continuous) at TC = 25°C
50
A
ID
Drain current (continuous) at TC = 100°C
36
A
Drain current (pulsed)
200
A
Total dissipation at TC = 25°C
60
W
Derating Factor
0.4
W/°C
Single pulse avalanche energy
280
mJ
-55 to 175
°C
IDM
(2)
Ptot
EAS
(3)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Garanted when external Rg=4.7 Ω and tf < tfmax.
2. Pulse width limited by safe operating area.
3. Starting Tj = 25 °C, ID = 19A, VDD = 18V
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
2.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
°C/W
Maximum lead temperature for soldering purpose
275
°C
TJ
3/16
Electrical characteristics
2
STD50NH02L - STD50NH02L-1
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 25mA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 20V
VDS = 20V, TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 25A
VGS = 5V, ID = 12.5A
Table 4.
Symbol
Test conditions
Parameter
Test conditions
Forward
transconductance
VDS = 15V, ID = 25A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
Gate Input Resistance
f = 1 MHz Gate
DC Bias = 0 Test Signal
Level = 20 mV Open
Drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Qoss(2)
Max.
24
1
Unit
V
1
10
µA
µA
±100
nA
1.8
V
0.0085
0.012
0.0105
0.020
Ω
Ω
Min.
Typ.
Max.
Unit
27
S
1400
400
55
pF
pF
pF
1
Ω
VDD = 10V, ID = 25A
RG = 4.7Ω VGS = 10V
(see Figure 13)
10
130
27
16
ns
ns
ns
ns
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 10V, ID = 50A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
24
5
3.5
nC
nC
nC
Output charge
VDS= 16 V, VGS= 0 V
9.5
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A
4/16
Typ.
Dynamic
gfs (1)
RG
Min.
STD50NH02L - STD50NH02L-1
Table 5.
Symbol
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Min.
Typ.
ISD = 25A, VGS = 0
Reverse recovery time
ISD = 50A, di/dt = 100A/µs,
Reverse recovery charge VDD = 20V, Tj = 150°C
Reverse recovery current (see Figure 15)
36
36
2
Max.
Unit
50
200
A
A
1.3
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/16
Electrical characteristics
STD50NH02L - STD50NH02L-1
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/16
STD50NH02L - STD50NH02L-1
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized breakdown voltage vs
temperature
7/16
Test circuit
3
STD50NH02L - STD50NH02L-1
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/16
Figure 18. Switching time waveform
STD50NH02L - STD50NH02L-1
4
Appendix A
Appendix A
Figure 19. Buck converter: power losses estimation
The power losses associated with the FETs in a synchronous buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
●
The low side (SW2) device requires:
●
Very low RDS(on) to reduce conduction losses
●
Small Qgls to reduce the gate charge losses
●
Small Coss to reduce losses due to output capacitance
●
Small Qrr to reduce losses on SW1 during its turn-on
●
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
●
voltage to avoid the cross conduction phenomenon;
●
The high side (SW1) device requires:
●
Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on
the gate
●
Small Qg to have a faster commutation and to reduce gate charge losses
●
Low RDS(on) to reduce the conduction losses.
9/16
Appendix A
STD50NH02L - STD50NH02L-1
Table 6.
Power losses calculation
High side switching (SW1)
Low side switch (SW2)
R DS(on)SW1 * I 2L * δ
R DS(on)SW2 * I 2L * (1 − δ )
Pconduction
Vin * (Q gsth(SW1) + Q gd(SW1) ) * f *
Pswitching
Recovery
IL
Ig
Zero Voltage Switching
(1)
Not applicable
Vin * Q rr(SW2) * f
Conductio
n
Not applicable
Vf(SW2) * I L * t deadtime * f
Pgate(QG)
Q g(SW1) * Vgg * f
Q gls(SW2) * Vgg * f
PQoss
Vin * Q oss(SW1) * f
Vin * Q oss(SW2) * f
2
2
Pdiode
1. Dissipated by SW1 during turn-on
Table 7.
Paramiters meaning
Parameter
d
Duty-cycle
Qgsth
Post threshold gate charge
Qgls
Third quadrant gate charge
Pconduction
Pswitching
10/16
Meaning
On state losses
On-off transition losses
Pdiode
Conduction and reverse recovery diode losses
Pgate
Gate drive losses
PQoss
Output capacitance losses
STD50NH02L - STD50NH02L-1
5
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/16
Package mechanical data
STD50NH02L - STD50NH02L-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
C
0.45
C2
0.48
D
6
E
6.4
6.6
0.037
0.6
0.017
0.023
0.6
0.019
0.023
6.2
0.236
0.244
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
12/16
STD50NH02L - STD50NH02L-1
Package mechanical data
DPAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
A
A1
A2
B
b4
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
TYP
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
MAX.
MIN.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
6.6
0.252
5.1
6.4
0.260
0.173
0.368
0.039
2.8
0.8
0.181
0.397
0.110
0.031
1
0.023
0.2
0°
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.185
0.090
4.6
10.1
0.6
MAX.
0.200
4.7
2.28
4.4
9.35
1
TYP.
0.039
0.008
8°
0°
8°
0068772-F
13/16
Packing mechanical data
6
STD50NH02L - STD50NH02L-1
Packing mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
14/16
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD50NH02L - STD50NH02L-1
7
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
21-Jun-2004
6
Preliminary version
11-Jul-2006
7
New template, no content change
15/16
STD50NH02L - STD50NH02L-1
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16/16