STGE50NC60VD N-channel 50A - 600V - ISOTOP Very fast PowerMESH™ IGBT Features Type VCES STGE50NC60VD 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A ■ High current capability ■ High frequency operation ■ Low CRES/CIES ratio (no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. Figure 1. Internal schematic diagram Applications ■ High frequency inverters ■ SMPS and PFC in both hard switching and resonant topologies ■ UPS ■ Motor drivers Table 1. Device summary Order code Marking Package Packaging STGE50NC60VD GE50NC60VD ISOTOP Tube July 2007 Rev 2 1/14 www.st.com 14 Contents STGE50NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision History 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 STGE50NC60VD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC (1) Collector current (continuous) at TC = 25°C 80 A IC (1) Collector current (continuous) at TC = 100°C 50 A ICL (2) Collector current (pulsed) 200 A Gate-emitter voltage ± 20 V Diode RMS forward current at Tc=25°C 30 A PTOT Total dissipation at TC = 25°C 260 W Tstg Storage temperature -55 to 150 °C VGE IF Tj Operating junction temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by Tjmax Table 3. Symbol Thermal resistance Parameter Min Typ Max Unit Rthj-case Thermal resistance junction-case (IGBT) -- -- 0.48 °C/W Rthj-case Thermal resistance junction-case (diode) -- -- 1.5 °C/W Rthj-amb Thermal resistance junction-amb -- -- 50 °C/W 3/14 Electrical characteristics 2 STGE50NC60VD Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES gfs Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Static Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 1.9 1.7 2.5 V V 5.75 V VCE= Max rating,TC= 125°C 150 1 µA mA Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Forward transconductance VCE = 15V, IC= 20A 3.75 20 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 17 Min. Typ. Max. Unit 4550 350 105 pF pF pF 214 30 96 nC nC nC STGE50NC60VD Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Table 7. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min. VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Tj = 125°C Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Figure 16 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Tj = 125°C Figure 16 Typ. Max. Unit 43 17 2060 ns ns A/µs 42 19 1900 ns ns A/µs 25 140 45 ns ns ns 60 170 77 ns ns ns Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Figure 18 VCC = 390V, IC = 40A RG= 3.3Ω, VGE= 15V, Tj = 125°C Figure 18 Min. Typ. Max. Unit 330 720 1050 450 970 1420 µJ µJ µJ 640 1400 2040 µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/14 STGE50NC60VD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 20A If = 20A, Tj = 125°C If = 20A,VR = 40V, Tj = 25°C, di/dt = 100 A/µs Figure 19 If = 20A,VR = 40V, Tj =125°C, di/dt = 100A/µs Figure 19 Min. Typ. Max. Unit 1.5 1 2.2 V V 44 66 3 ns nC A 88 237 5.4 ns nC A STGE50NC60VD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 7/14 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature STGE50NC60VD Figure 9. Gate charge vs gate-emitter voltage Figure 10. Capacitance variations Figure 11. Total switching losses vs temperature Figure 12. Total switching losses vs gate charge resistance Figure 13. Total switching losses vs collector current 8/14 STGE50NC60VD Figure 14. Turn-off SOA Electrical characteristics Figure 15. Emitter-collector diode characteristics 9/14 Test circuit 3 STGE50NC60VD Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14 STGE50NC60VD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGE50NC60VD ISOTOP MECHANICAL DATA mm DIM. MIN. A TYP. 11.8 inch MAX. MIN. 12.2 0.466 TYP. MAX. 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.157 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 8.2 0.307 N 4 O 7.8 0.157 0.322 A G B O H J K L M 12/14 C F E D N STGE50NC60VD Revision History 5 Revision History Table 9. Revision history Date Revision Changes 11-Oct-2006 1 First release 24-Jul-2007 2 Internal schematic diagram has been updated Figure 1 13/14 STGE50NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. 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