STGF3NC120HD N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESH™ IGBT with Integral Damper Diode Table 1: General Features Figure 1: Package TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGF3NC120HD 1200 V < 2.8 V 3A ■ ■ ■ ■ LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH SPEED 3 DESCRIPTION This PowerMESH™ IGBT is designed using the latest high voltage technology based on a patented strip layout. A new lifetime control allows good switching performance and low voltage drop. This IGBT featuring a co-packaged diode is optimized for horizontal deflection applications in small and medium sets. 1 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS ■ HORIZONTAL DEFLECTION ■ HOME APPLIANCE ■ LIGHTING Table 2: Order Code PART NUMBER MARKING PACKAGE PACKAGING STGF3NC120HD GF3NC120HD TO-220FP TUBE Rev. 2 January 2005 1/11 STGF3NC120HD Table 3: Absolute Maximum ratings Symbol Parameter Value Unit 1200 V VCES Collector-Emitter Voltage (VGS = 0) VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 6 A IC Collector Current (continuous) at TC = 100°C 3 A Collector Current (pulsed) 10 A ICM () PTOT Total Dissipation at TC = 25°C 25 W Derating Factor 0.20 W/°C VISO Insulation withstand voltage AC (t=1sec, Tc=25°C) 2500 V Tstg Storage Temperature –55 to 150 °C Tj Operating Junction Temperature range () Pulse width limited by safe operating area Table 4: Thermal Data Min. Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) Typ. Max. 5.0 °C/W 62.5 °C/W 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol Parameter VBR(CES) Collector-Emitter Breakdown Voltage IC = 1 mA, VGE = 0 ICES Collector cut-off Current (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tc= 125°C 2/11 Test Conditions Min. Typ. Max. 1200 Unit V 2 2.3 2.2 50 1 µA mA ±100 nA 5 V 2.8 V V STGF3NC120HD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Parameter Test Conditions Forward Transconductance VCE = 25 V , IC = 3 A Cies Input Capacitance VCE = 25 V, f= 1 MHz, VGE = 0 Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 960 V, IC = 3 A, VGE = 15 V (see Figure 22) ICL Turn-off SOA minimum current Vclamp = 960 V , Tj = 150°C RG = 10 Ω, VGE = 15 V Min. Typ. Max. Unit 4 S 470 pF 45 pF 6 pF 24 3 10 32 10 nC nC nC A (1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5% Table 7: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 20) 15 3.5 880 ns ns A/µs td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 480 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 20) 14.5 4 770 ns ns A/µs Table 8: Switching Off Symbol Parameter tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf tr(Voff) td(off) tf Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Min. Vcc = 800 V, IC = 3 A, RG = 10 Ω , VGE = 15 V TJ = 25 °C (see Figure 20) Vcc = 800 V, IC = 3 A, RG = 10 Ω , VGE = 15 V Tj = 125 °C (see Figure 20) Typ. Max. Unit 72 ns 118 ns 250 ns 132 ns 210 ns 470 ns Table 9: Switching Energy Symbol Parameterr Test Conditions Min. Typ. Max Unit Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 21) 236 290 526 µJ µJ µJ Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 21) 360 620 980 µJ µJ µJ (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) (3) Turn-off losses include also the tail of the collector current. 3/11 STGF3NC120HD Table 10: Collector-Emitter Diode Symbol 4/11 Parameterr Test Conditions Min. Typ. Max Unit 3 12 A A 2.0 V V If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 1.5 A If = 1.5A, Tj = 125°C 1.6 1.3 trr Qrr Irm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A, VR = 40 V Tj = 25°C, di/dt = 100 A/µs (see Figure 23) 51 85 3.3 ns nC A trr Qrr Irm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A, VR = 40 V Tj = 125°C, di/dt = 100 A/µs (see Figure 23) 64 133 4.2 ns nC A STGF3NC120HD Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 5/11 STGF3NC120HD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Switching Losses vs Temperature Figure 11: Switching Losses vs Gate Resistance Figure 14: Switching Losses vs Collector Current 6/11 STGF3NC120HD Figure 15: Thermal Impedance Figure 18: Power Losses Figure 16: Collector-Emitter Diode Characteristics Figure 19: Power Losses Figure 17: Turn-Off SOA 7/11 STGF3NC120HD Figure 20: Test Circuit for Inductive Load Switching Figure 22: Gate Charge Test Circuit Figure 21: Switching Waveforms Figure 23: Diode Recovery Time Waveforms 8/11 STGF3NC120HD TO-220FP MECHANICAL DATA mm. DIM. MIN. inch MAX. MIN. A 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 1.126 1.204 L2 16 0.630 L3 28.6 30.6 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/11 STGF3NC120HD Table 11: Revision History Date Revision 13-Dec-2004 21-Jan-2005 1 2 10/11 Description of Changes First release Modified Curve 17 STGF3NC120HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11