STGF8NC60KD N-channel 600V - 4A - TO-220FP Short circuit rated PowerMESH™ IGBT Features Type VCES VCE(sat)Typ @25°C IC @100°C STGF8NC60KD 600V 2.2V 4A ■ Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short circuit withstand time 10µs 3 1 2 TO-220FP Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Figure 1. Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Table 1. Device summary Order code Marking Package Packaging STGF8NC60KD GF8NC60KD TO-220FP Tube September 2007 Rev 1 1/14 www.st.com 14 Contents STGF8NC60KD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGF8NC60KD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 600 V VCES Collector-emitter voltage (VGS = 0) IC(1) Collector current (continuous) at TC = 25°C 7 A IC(1) Collector current (continuous) at TC = 100°C 4 A ICP(2) Pulsed collector current 30 A VGE Gate-emitter voltage ±20 V Diode RMS forward current at Tc=25°C 7 A IFSM Surge not repetitive forward current tp = 10ms sinusoidal 20 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) 2500 V PTOT Total dissipation at TC = 25°C 24 W – 55 to 150 °C 10 µs Value Unit IF Tj Tscw Operating junction temperature Short circuit withstand time 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max IGBT 5.1 °C/W Rthj-case Thermal resistance junction-case max diode 7 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W 3/14 Electrical characteristics 2 STGF8NC60KD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC=3A voltage VGE= 15V, IC= 3A, Tc= 125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES gfs Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/14 Static Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 2.2 1.8 2.75 V V 6.5 V VCE=Max rating,TC= 125°C 150 1 µA mA Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Forward transconductance VCE = 15V, IC= 3A 4.5 15 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 3A, VGE = 15V, (see Figure 18) Min. Typ. Max. Unit 380 46 8.5 pF pF pF 19 5 9 nC nC nC STGF8NC60KD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min. VCC = 390V, IC = 3A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 19) VCC = 390V, IC =3A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 19) Vcc = 390V, IC = 3A, RGE = 10Ω, VGE =15V, TJ=25°C (see Figure 19) Vcc = 390V, IC = 3A, RGE=10Ω, VGE =15V, Tj=125°C (see Figure 19) Typ. Max. Unit 17 6 655 ns ns A/µs 16.5 6.5 575 ns ns A/µs 33 72 82 ns ns ns 60 106 136 ns ns ns Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 3A RG= 10Ω, VGE=15V, Tj=25°C (see Figure 19) VCC = 390V, IC = 3A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 19) Min. Typ. Max. Unit 55 85 140 µJ µJ µJ 87 162 249 µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter Test conditions If = 3A Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Tj = 25°C, di/dt = 100 A/µs (see Figure 20) Reverse recovery time Reverse recovery charge Reverse recovery current Tj =125°C, di/dt = 100A/µs (see Figure 20) Qrr Irrm trr Qrr Irrm 6/14 STGF8NC60KD If = 3A, Tj = 125°C If = 3A,VR = 30V, If = 3A,VR = 30V, Min. Typ. Max. Unit 1.6 1.3 2.1 V V 23.5 16.5 1.4 ns nC A 39 39 2 ns nC A STGF8NC60KD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations 7/14 Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature Figure 10. Normalized breakdown voltage vs temperature STGF8NC60KD Figure 9. Collector-emitter on voltage vs collector current Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGF8NC60KD Figure 14. Thermal impedance Electrical characteristics Figure 15. Turn-off SOA Figure 16. Forward voltage drop versus forward current 9/14 Test circuit 3 STGF8NC60KD Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveform Figure 20. Diode recovery time waveform 10/14 STGF8NC60KD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGF8NC60KD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/14 L5 1 2 3 L4 STGF8NC60KD 5 Revision history Revision history Table 9. Document revision history Date Revision 20-Sep-2007 1 Changes First release 13/14 STGF8NC60KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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