STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT General features Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGP10NB60SD 600V < 1.7V 10A ■ HIGH CURRENT CAPABILITY ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 1 2 TO-220 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz). Internal schematic diagram Applications ■ LIGHT DIMMER ■ STATIC RELAYS ■ MOTOR CONTROL Order codes Sales Type Marking Package Packaging STGP10NB60SD GP10NB60SD TO-220 TUBE November 2005 Rev 1 1/12 www.st.com 12 STGP10NB60SD 1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Unit Collector-Emitter Voltage (VGS = 0) 600 V IC Note 5 Collector Current (continuous) at TC = 25°C 20 A IC Note 5 Collector Current (continuous) at TC = 100°C 10 A Collector Current (pulsed) 80 W VGE Gate-Emitter Voltage ±20 A PTOT Total Dissipation at TC = 25°C 31.5 W – 65 to 150 °C VCES ICM Note 1 Tstg Tj Table 2. Parameter Storage Temperature Operating Junction Temperature Thermal resistance Rthj-case Thermal Resistance Junction-case Max 4.7 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal resistance Case-sink Typ 0.5 2/12 STGP10NB60SD 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC= 250µA, VGE= 0 600 V VBR(CES) Collector-Emitter Breakdown Voltage IC= 1mA, VGE= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage VGE= 15V, IC= 10A VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA ICES Collector cut-off Current (VGE = 0) IGES gfs Table 4. Symbol C ies VGE= 15V, IC= 5A 1.7 V V V 5 V VCE=Max Rating,TC= 125°C 10 100 µA µA Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA Forward Transconductance VCE = 25V, IC= 10A VGE=15V, IC= 10A, Tc= 125°C 2.5 VCE= Max Rating,TC= 25°C 5 S Dynamic Parameter Test Conditions Cres Input Capacitance VCE = 25V, f = 1MHz, V GE = 0 Output Capacitance Reverse Transfer Capacitance Qg Total Gate Charge ICL Latching Current C oes 1.15 1.35 1.25 Min. VCE = 400V, IC = 5A, VGE = 15V, (see Figure 17) Vclamp=480V, RG=1kΩ Tj=125°C 20 Typ. Max. Unit 610 65 12 pF pF pF 33 nC A 3/12 STGP10NB60SD 2 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on tc tr(Voff) tf tc tr(Voff) tf Table 6. Switching On/Off (inductive load) Parameter RG= 1kΩ, VGE= 15V, Tj= 25°C (see Figure 18) Cross-over Time Off Voltage Rise Time Current Fall Time RG= 1kΩ, VGE= 15V,Tj= 25°C (see Figure 18) Cross-over Time Off Voltage Rise Time Current Fall Time Eon Note 3 Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Table 7. Symbol IF VCC = 480V, IC = 10A VCC = 480V, IC = 10A RG= 1kΩ, VGE= 15V, Tj=125°C (see Figure 18) Test Conditions Max. Unit 0.7 0.46 8 ns ns A/µs 2.2 1.2 1.2 µs µs µs 3.8 1.2 1.9 µs µs µs Typ. Max. 0.6 5.0 5.6 RG= 1kΩ, VGE= 15V, Tj= 25°C (see Figure 18) Unit mJ mJ mJ Collector-emitter diode Parameter Test Conditions Forward Current Forward Current pulsed Vf Forward On-Voltage trr If = 7A ,VR = 35V, Reverse Recovery Time Reverse Recovery Charge Tj =125°C, di/dt = 100A/µs Reverse Recovery Current (see Figure 19) Irrm Min. VCC = 480V, IC = 10A IFM Qrr Typ. Switching energy (inductive load) Parameter Ets Min. VCC = 480V, IC = 10A Turn-on Delay Time Current Rise Time Turn-on Current Slope Symbol Eoff Note 4 Test Conditions If = 3.5A If = 3.5A, Tj = 125°C Min. Typ. 1.4 1.15 50 70 2.7 Max. Unit 7 56 A A 1.9 V V ns nC A (1)Pulse width limited by max. junction temperature (2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (3)Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (4) Turn-off losses include also the tail of the collector current (5) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CE SAT ( MAX ) C C 4/12 STGP10NB60SD 2.1 2 Electrical characteristics Electrical characteristics (curves) Figure 1. Safe Operating Area Figure 2. Thermal Impedance Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Collector-Emitter on Voltage vs Temperature 5/12 STGP10NB60SD 2 Electrical characteristics Figure 7. Collector-Emitter on Voltage vs Collector Current Figure 8. Figure 9. Capacitance Variations Figure 10. Gate Charge vs Gate-Emitter Voltage Figure 11. Switching Losses vs Gate Resistance 6/12 Gate Threshold Voltage vs Temperature Figure 12. Switching Losses vs Collector Current STGP10NB60SD Figure 13. Switching Losses vs Temperature 2 Electrical characteristics Figure 14. Normalized Breakdown Voltage vs Temperature Figure 15. Emitter-Collector Diode Characteristics 7/12 3 Test Circuits 3 STGP10NB60SD Test Circuits Figure 16. Test Circuit for Inductive Load Switching Figure 17. Gate Charge Test Circuit Figure 18. Switching Waveform Figure 19. Diode Recovery Time Waveform 8/12 STGP10NB60SD 4 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 STGP10NB60SD 4 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/12 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP10NB60SD 5 5 Revision History Revision History Date Revision 18-Nov-2005 1 Changes Initial release. 11/12 STGP10NB60SD 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12