STGP10NC60H N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH™ IGBT TARGET SPECIFICATION General features Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGP10NC60H 600V < 2.5V 10A ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description 3 1 2 TO-220 Internal schematic diagram Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. Applications ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ MOTOR DRIVERS Order codes Sales Type Marking Package Packaging STGP10NC60H P10NC60H TO-220 TUBE November 2005 This is a preliminary information on a new product now in development. Details are subject to change without notice Rev 1 1/9 www.st.com 9 STP10NC60H 1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Unit Collector-Emitter Voltage (VGS = 0) 600 V IC Note 5 Collector Current (continuous) at TC = 25°C 20 A IC Note 5 Collector Current (continuous) at TC = 100°C 10 A Collector Current (pulsed) 40 W VGE Gate-Emitter Voltage ±20 A PTOT Total Dissipation at TC = 25°C 60 W – 55 to 150 °C 300 °C VCES ICM Note 1 Tstg Parameter Storage Temperature Tj Operating Junction Temperature Tl Maximum Lead Temperature For Soldering Purpose (for 10sec. 1.6 mm from case) Table 2. Thermal resistance Rthj-case Thermal Resistance Junction-case Max 2.08 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W 2/9 STP10NC60H 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/Off Symbol VBR(CES) ICES Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Test Conditions IC= 1mA, VGE= 0 VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tc= 125°C gfs Forward Transconductance VCE = 15V, IC= 5A Symbol C ies C oes Cres Qg Qge Qgc Max. 600 Unit V 10 VCE=Max Rating,TC= 125°C VGE= ±20V , VCE= 0 Table 4. Typ. VCE= Max Rating,TC= 25°C Gate-Emitter Leakage Current (VCE = 0) IGES Min. 1 5 1.9 1.7 µA mA ±100 nA 7 V 2.5 V V TBD S Dynamic Parameter Test Conditions Input Capacitance VCE = 25V, f = 1MHz,VGE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 2) Min. Typ. Max. Unit TBD TBD TBD pF pF pF TBD TBD TBD nC nC nC 3/9 STP10NC60H 2 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Switching On/Off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Parameter Eon Note 3 Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Ets Eon Note 3 Eoff Note 4 Ets Min. VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 3) VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 3) Vcc = 390V, IC = 5A, RGE = 10Ω , VGE = 15V,TJ=25°C (see Figure 3) Vcc = 390V, IC = 5A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) Typ. Max. Unit TBD TBD TBD ns ns A/µs TBD TBD TBD ns ns A/µs TBD TBD TBD ns ns ns TBD TBD TBD ns ns ns Switching energy (inductive load) Symbol Eoff Note 4 Test Conditions Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions VCC = 390V, IC = 75A RG= 10Ω, V GE= 15V, Tj= 25°C (see Figure 3) VCC = 390V, IC = 5A RG= 10Ω, V GE= 15V, Tj= 125°C (see Figure 3) Min. Typ. Max. Unit TBD TBD TBD µJ µJ µJ TBD TBD TBD µJ µJ µJ (1)Pulse width limited by max. junction temperature (2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (3) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (4) Turn-off losses include also the tail of the collector current (5) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( MAX ) C C 4/9 STP10NC60H 3 3 Test Circuits Test Circuits Figure 1. Test Circuit for Inductive Load Switching Figure 3. Switching Waveform Figure 2. Gate Charge Test Circuit 5/9 4 Package mechanical data 4 STP10NC60H Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STP10NC60H 4 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 7/9 STP10NC60H 5 Revision History 5 8/9 Revision History Date Revision 18-Nov-2005 1 Changes Initial release. STP10NC60H 5 Revision History Information furnished is believed to be accurate and reliable. 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