STMICROELECTRONICS STGP30NC60W

STGP30NC60W
STGW30NC60W
N-channel 30A - 600V - TO-247 - TO-220
Ultra fast switching PowerMESH™ IGBT
General features
Type
VCES
VCE(sat)Max
@25°C
IC
@100°C
STGW30NC60W
STGP30NC60W
600V
600V
< 2.5V
< 2.5V
30A
30A
3
■
High frequency operation
■
Lower CRES / CIES ratio (no cross-conduction
susceptibility)
1
■
Very soft ultra fast recovery antiparallel diode
■
Short circuit withstand time 10µs
TO-247
2
TO-220
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “W” identifies a family
optimized for very
high frequency application.
Internal schematic diagram
Applications
■
High frequency motor controls, inverters, ups
■
HF, SMPS and PFC in both hard switch and
resonant topologies
Order codes
Part number
Marking
Package
Packaging
STGW30NC60W
GW30NC60W
TO-247
Tube
STGP30NC60W
GP30NC60W
TO-220
Tube
December 2006
Rev 3
1/14
www.st.com
14
Contents
STGW30NC60W - STGP30NC60W
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 5
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/14
................................................ 8
STGW30NC60W - STGP30NC60W
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGS = 0)
600
V
IC
Collector current (continuous) at 25°C
60
A
IC
Collector current (continuous) at 100°C
30
A
Collector current (pulsed)
200
A
VGE
Gate-emitter voltage
± 20
V
PTOT
Total dissipation at TC = 25°C
200
W
Tstg
Storage temperature
– 55 to 150
°C
300
°C
VCES
ICM(1)
Parameter
Tj
Operating junction temperature
TL
Maximum lead temperature for soldering purpose (1.6mm
from case, for 10 sec.)
1. Pulse width limited by max junction temperature
Table 2.
Thermal resistance
Min.
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Typ.
Max.
Unit
0.625 °C/W
TO-220
TO-247
62.5
50
°C/W
°C/W
3/14
Electrical characteristics
2
STGW30NC60W - STGP30NC60W
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
VBR(CES)
Collector-emitter
breakdown voltage
VCE(SAT)
Collector-emitter saturation VGE=15V, IC= 20A, Tj= 25°C
voltage
VGE=15V, IC= 20A,Tj= 125°C
Test conditions
IC = 1mA, VGE = 0
Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector-emitter leakage
current (VCE = 0)
VCE = Max rating,Tc=25°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20V , VCE = 0
Forward transconductance
VCE = 15V, IC= 20A
VGE(th)
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Min.
Typ.
Max.
600
Unit
V
2.1
1.8
3.75
VCE = Max rating, Tc=125°C
2.5
V
V
5.75
V
10
1
µA
mA
± 100
nA
15
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
ICL
Turn-Off SOA minimum
current
Qge
4/14
Static
Test conditions
Min.
VCE = 390V, IC = 20A,
102
17.5
47
VGE = 15V,
(see Figure 16)
RG = 10Ω, VGE= 15V
Max.
2080
175
52
VCE = 25V, f = 1MHz, VGE=0
Vclamp = 480V , Tj = 150°C
Typ.
200
Unit
pF
pF
pF
140
nC
nC
nC
A
STGW30NC60W - STGP30NC60W
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Electrical characteristics
Switching on/off (inductive load)
Parameter
Test Conditions
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 20A
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390V, IC = 20A
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 20A,
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390V, IC = 20A,
Min.
RG= 10Ω, VGE= 15V,
TJ= 25°C (see Figure 15)
RG= 10Ω, VGE= 15V,
TJ= 125°C (see Figure 15)
RGE = 10Ω , VGE = 15V
TJ=25°C (see Figure 17)
RGE=10Ω , VGE =15V,
TJ=125°C (see Figure 17)
Typ.
Max.
Unit
29.5
12
1640
ns
ns
A/µs
29
13.5
1600
ns
ns
A/µs
19.5
118
27
ns
ns
ns
46
151
38
ns
ns
ns
Switching energy (inductive load)
Parameter
Test conditions
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 20A
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 17)
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
Min.
Typ.
Max.
Unit
116
181
297
µJ
µJ
µJ
239
355
594
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
STGW30NC60W - STGP30NC60W
2.1
Electrical characteristics (curves)
Figure 1.
Output characterisics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
6/14
Capacitance variations
STGW30NC60W - STGP30NC60W
Electrical characteristics
Figure 7.
Normalized gate threshold voltage
vs temperature
Figure 8.
Collector-emitter on voltage vs
collector current
Figure 9.
Normalized breakdown voltage vs
temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/14
Electrical characteristics
Figure 13. Thermal impedance
8/14
STGW30NC60W - STGP30NC60W
Figure 14. Turn-off SOA
STGW30NC60W - STGP30NC60W
3
Test circuit
Test circuit
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
Figure 17. Switching waveform
Figure 18. Diode recovery time waveform
9/14
Package mechanical data
4
STGW30NC60W - STGP30NC60W
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
STGW30NC60W - STGP30NC60W
Package mechanical data
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
11/14
Package mechanical data
STGW30NC60W - STGP30NC60W
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
12/14
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STGW30NC60W - STGP30NC60W
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
15-Sep-2005
1
Initial release.
04-Jan-2006
2
Inserted TO-220. Complete version
18-Dec-2006
3
The document has been reformatted
13/14
STGW30NC60W - STGP30NC60W
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