STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH™ IGBT Preliminary Data Features Type VCES VCE(sat) @25°C IC @100°C STGW30N90D 900V < 2.75V 30A ■ Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application TO-247 Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. Figure 1. Internal schematic diagram Application ■ Induction heating Table 1. Device summary Order code Marking Package Packaging STGW30N90D GW30N90D TO-247 Tube July 2007 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 www.st.com 10 Contents STGW30N90D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 ................................................ 6 STGW30N90D 1 Electrical ratings Electrical ratings Table 2. Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 900 V IC (1) Collector current (continuous) at 25°C 60 A IC (1) Collector current (continuous) at 100°C 30 A ICL (2) Collector current (pulsed) 135 A VGE Gate-emitter voltage ±25 V PTOT Total dissipation at TC = 25°C 220 W If Diode RMS forward current at TC = 25°C 30 A Tj Operating junction temperature –55 to 150 °C Value Unit Tstg 1. Absolute maximum ratings Storage temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=900V, Tj=125°C, RG=10Ω, VGE=15V Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case 0.57 °C/W Rthj-amb Thermal resistance junction-ambient (diode) 1.6 °C/W Rthj-amb Thermal resistance junction-ambient (IGBT) 50 °C/W 3/10 Electrical characteristics 2 STGW30N90D Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(SAT) Collector-emitter saturation VGE= 15V, IC= 20A, Tj= 25°C voltage VGE= 15V, IC= 20A, Tj=125°C Test conditions IC = 1mA, VGE = 0 Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector-emitter leakage current (VCE = 0) VGE =Max rating,Tc=25°C IGES Gate-emitter leakage current (VCE = 0) VGE =± 20V, VCE = 0 Forward transconductance VCE = 25V, IC= 20A VGE(th) gfs Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/10 Static electrical characteristics Min. Typ. Max. 900 Unit V 2.2 2.0 3.75 VGE =Max rating, Tc=125°C 2.75 V V 5.75 V 500 10 µA mA ± 100 nA 14 S Dynamic electrical characteristics Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1 MHz, VGE=0 VCE = 900V, IC= 20A,VGE=15V Min. Typ. Max. 2510 175 30 110 16 49 Unit pF pF pF 120 nC nC nC STGW30N90D Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets 1. Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC = 900V, IC = 20A Turn-on delay time Current rise time Turn-on current slope VCC = 900V, IC = 20A Off voltage rise time Turn-off delay time Current fall time VCC = 900V, IC = 20A Off voltage rise time Turn-off delay time Current fall time VCC = 900V, IC = 20A Min. RG= 10Ω, VGE= 15V, Tj=25°C (see Figure 2) RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 2) RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 2) RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 2) Typ. Max. Unit 29 11 1820 ns ns A/µs 27 14 1580 ns ns A/µs 90 275 312 ns ns ns 150 336 592 ns ns ns Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 900V, IC = 20A Turn-on switching losses Turn-off switching losses Total switching losses VCC = 900V, IC = 20A Min. RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 2) RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 2) Typ. Max. Unit 1660 4438 6096 µJ µJ µJ 3015 6900 9915 µJ µJ µJ Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit 2.5 V V Vf Forward on-voltage If = 20A, Tj = 25°C If = 20A, Tj = 125°C 1.9 1.7 trr Reverse recovery time Reverse recovery charge Reverse recovery current If = 20A, VR = 27V, Tj = 125°C, di/dt = 100A/µs 152 722 9 Qrr Irrm (see Figure 5) ns nC A 5/10 Test circuit STGW30N90D 3 Test circuit Figure 2. Test circuit for inductive load switching Figure 3. Gate charge test circuit Figure 4. Switching waveform Figure 5. Diode recovery time waveform 6/10 STGW30N90D 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STGW30N90D TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 8/10 TYP 5.50 0.216 STGW30N90D 5 Revision history Revision history Table 9. Revision history Date Revision 19-Jul-2006 1 Changes First issue. 9/10 STGW30N90D Please Read Carefully: Information in this document is provided solely in connection with ST products. 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