STMICROELECTRONICS STGW38IH120D

STGW38IH120D
30 A - 1200 V - very fast IGBT
Preliminary Data
Features
■
Low saturation voltage
■
High current capability
■
Low switching loss
■
Very soft ultra fast recovery antiparallel diode
Applications
2
3
1
■
Induction cooking, microwave oven
■
Soft switching application
TO-247 long leads
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. This device is well suited for the
resonant or soft switching application.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGW38IH120D
GW38IH120D
TO-247 long leads
Tube
May 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14
Contents
STGW38IH120D
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STGW38IH120D
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Parameter
Value
Unit
1200
V
VCES
Collector-emitter voltage (VGE = 0)
IC (1)
Collector current (continuous) at 25 °C
60
A
IC (1)
Collector current (continuous) at 100 °C
30
A
ICL (2)
Turn-off latching current
45
A
ICP (3)
Pulsed collector current
45
A
VGE
Gate-emitter voltage
±25
V
PTOT
Total dissipation at TC = 25 °C
235
W
Diode RMS forward current at TC = 25 °C
30
A
Surge non repetitive forward current tp = 10 ms
sinusoidal
100
A
–55 to 150
°C
Value
Unit
IF
IFSM
Tj
1.
Absolute maximum ratings
Operating junction temperature
Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
3. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Thermal resistance
Parameter
Rthj-case
Thermal resistance junction-case IGBT max.
0.53
°C/W
Rthj-case
Thermal resistance junction-case diode max.
1.36
°C/W
Rthj-amb
Thermal resistance junction-ambient max.
40
°C/W
3/14
Electrical characteristics
2
STGW38IH120D
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
Test conditions
Min.
IC = 1 mA
Typ. Max. Unit
1200
VCE(sat)
Collector-emitter saturation VGE= 15 V, IC= 20 A
voltage
VGE= 15 V, IC= 20 A, Tc =125 °C
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 1 mA
ICES
Collector-cut-off current
(VGE = 0)
VCE =1200 V
IGES
gfs (1)
V
2.2
2.0
2.8
V
V
5.75
V
VCE =1200 V, Tc=125 °C
500
10
µA
mA
Gate-emitter leakage
current (VCE = 0)
VGE =± 20 V
±
100
nA
Forward transconductance
VCE = 25 V, IC= 20 A
3.75
20
S
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Table 5.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/14
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE=0
VCE = 960 V,
IC= 20 A,VGE=15 V
Min.
Typ.
Max.
Unit
2900
162
30
pF
pF
pF
127
18
50
nC
nC
nC
STGW38IH120D
Electrical characteristics
Table 6.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 7.
Symbol
Eon (1)
Eoff
(2)
Ets
Eon (1)
Eoff
(2)
Ets
1.
Switching on/off (inductive load)
Parameter
Test conditions
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 960 V, IC = 20 A
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 960 V, IC = 20 A
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 960 V, IC = 20 A
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 960 V, IC = 20 A
Min.
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
RG= 10 Ω, VGE= 15 V,
Tc= 125 °C (see Figure 17)
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
RG= 10 Ω, VGE= 15 V,
Tc= 125 °C (see Figure 17)
Typ.
Max.
Unit
46
10
1660
ns
ns
A/µs
45
12
1500
ns
ns
A/µs
102
284
180
ns
ns
ns
200
424
316
ns
ns
ns
Switching energy (inductive load)
Parameter
Test conditions
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 20 A
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
RG= 10 Ω, VGE= 15 V,
Tc= 125 °C (see Figure 17)
Min.
Typ.
Max.
Unit
1.5
3.4
4.9
mJ
mJ
mJ
2.3
6.4
8.7
mJ
mJ
mJ
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
Table 8.
Symbol
Collector-emitter diode
Parameter
VF
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Qrr
Irrm
trr
Qrr
Irrm
6/14
STGW38IH120D
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
IF = 20 A
IF = 20 A, TC = 125 °C
IF = 20 A, VR = 45 V,
di/dt = 100 A/µs
(see Figure 20)
IF = 20 A, VR = 45 V,
Tc = 125 °C,
di/dt = 100 A/µs
(see Figure 20)
Min.
Typ.
Max.
Unit
1.9
1.7
V
V
85
235
5.6
ns
nC
A
152
722
9
ns
nC
A
STGW38IH120D
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
HV42580
IC(A)
VGE=15 V
Transfer characteristics
HV42585
IC(A)
14 V
VCE=15V
13 V
300
250
12 V
250
200
11 V
200
10 V
150
150
9V
100
100
8V
50
50
7V
0
0
5
Figure 4.
15
10
VCE(V)
Transconductance
0
Figure 5.
HV42590
Gfs(S)
TC=-50°C
26
5
10
15
VGE(V)
Collector-emitter on voltage vs
temperature
HV42600
VCE(sat)
(V)
24
2.5
25°C
22
IC=40A
2.375
20
125°C
18
2.25
16
2.125
14
12
2.0
10
1.875
8
IC=20A
1.75
6
IC=10A
1.625
4
1.5
-75 -50
2
0
Figure 6.
5
20
15
10
IC(A)
Gate charge vs gate-source voltage Figure 7.
HV42630
VGE(V)
16
0
25
50
75
100 125 150 TJ(°C)
Capacitance variations
HV42620
C(pF)
4500
VCE=960V
IC=20A
14
-25
f=1MHz
4000
3500
12
Cies
3000
10
2500
Coes
8
2000
6
1500
4
1000
Cres
2
500
0
0
50
100
150
Qg(nC)
0
10
20
30
40
VCE(V)
7/14
Electrical characteristics
Figure 8.
STGW38IH120D
Normalized gate threshold voltage
vs temperature
HV42610
VGE(th)
(norm)
IC=250µA
Figure 9.
Collector-emitter on voltage vs
collector current
HV42650
VCE(sat)
(V)
TC=125°C
2.45
1.1
2.25
TC=-50°C
1.05
2.05
1.0
1.85
0.95
1.65
0.9
1.45
0.85
TC=25°C
0.8
1.25
0.75
1.05
0.7
-75
0.85
-50
-25
0
25
50
75
100 125 150 TJ(°C)
Figure 10. Normalized breakdown voltage vs
temperature
0
10
20
30
40
IC(A)
Figure 11. Switching losses vs temperature
HV42640
BVCES
(norm)
IC=1mA
1.1
1.075
1.05
1.025
1
0.975
0.95
0.925
0.9
-75
-50
-25
0
25
50
75
100 125 150 TJ(°C)
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
8/14
STGW38IH120D
Electrical characteristics
Figure 14. Thermal impedance
Figure 15. Turn-off SOA
HV42690
IC(A)
10
1
0.1
1
10
100
1000
VCE(V)
Figure 16. Emitter-collector diode
characteristics
IFM(A)
100
90
Tj=150°C
(typical values)
80
70
60
50
Tj=25°C
(maximum values)
40
Tj=150°C
(maximum values)
30
20
10
VFM(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
9/14
Test circuit
3
STGW38IH120D
Test circuit
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveform
Figure 20. Diode recovery time waveform
10/14
STGW38IH120D
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
Package mechanical data
STGW38IH120D
TO-247 long leads mechanical data
mm
Dim.
Min.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
DIAM
Typ.
Max.
4.85
2.2
0.4
1
5.16
2.6
0.8
1.4
3
2
1.9
3
2.4
3.4
10.9
15.45
19.85
3.7
18.3
14.2
34.05
5.35
2
16.03
21.09
4.3
19.13
20.3
41.38
6.3
3
5°
60°
3.55
3.65
V
5
H
L1
L4
L2
L
DIA
L5
A
F2
F1
L3
F3
D
F4
V2
F(X3)
M
E
G
=
12/14
=
7395426_Rev_D
STGW38IH120D
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
14-May-2008
1
Changes
Initial release
13/14
STGW38IH120D
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14