STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET™ II Power MOSFET Features ■ Type VDSS RDS(on) ID STN4NF03L 30 V <0.05 Ω 6.5 A 2 Low threshold drive 1 Application ■ 2 3 SOT-223 Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STN4NF03L 4NF03L SOT-223 Tape & reel December 2007 Rev 6 1/12 www.st.com 12 Contents STN4NF03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STN4NF03L 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 16 V ID Drain current (continuous) at TC = 25 °C 6.5 A ID Drain current (continuous) at TC=100 °C 4.5 A Drain current (pulsed) 26 A Total dissipation at TC = 25 °C 3.3 W 0.026 W/°C IDM (1) PTOT Derating factor EAS (2) Single pulse avalanche energy 100 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Value Unit 1. Pulse width limited by safe operating area 2. Starting TJ = 25 °C, ID = 6 A Table 3. Symbol Thermal data Parameter Rthj-pcb Thermal resistance junction-PCB(1) max 38 °C/W Rthj-pcb junction-PCB(2) max 100 °C/W 260 °C Tl Thermal resistance Maximum lead temperature for soldering purpose (for 10 sec. 1.6 mm from case) typ 1. When mounted on 1 inch2 FR-4 board, 2 oz. Cu., t < 10 s 2. Minimum recommended footprint 3/12 Electrical characteristics 2 STN4NF03L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Typ. Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±16 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2 A Max. 30 Unit V VDS = max rating, IDSS Table 5. Min. VDS = max rating @125 °C 1 10 µA µA ± 100 nA 1 V 0.039 0.046 0.05 0.06 Ω Ω Min. Typ. Max. Unit 3 6 S pF pF pF VGS = 5 V, ID= 2 A Dynamic Symbol Parameter Test conditions gfs (1) Forward transconductance VDS = 10 V, ID = 1 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 330 90 40 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 24 V, ID = 4 A VGS =10 V (see Figure 14) 6.5 3.2 2 9 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 6. Symbol 4/12 Switching times Parameter td(on) tr Turn-on delay time rise time td(off) tf Turn-off-delay time fall time Test conditions VDD = 15 V, ID= 2 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 15) VDD = 15 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 15) Min. 11 100 ns ns 35 22 ns ns STN4NF03L Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Source drain diode Parameter Test conditions Max Unit Source-drain current 6.5 A Source-drain current (pulsed) 26 A 1.5 V Forward on voltage ISD = 6.5 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100 A/µs, VDD = 15 V, Tj=150 °C ISD = 6.5 A, (see Figure 15) Min. Typ. 34 25 1.4 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STN4NF03L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance junction-PCB Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 STN4NF03L Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics 7/12 Test circuit 3 STN4NF03L Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STN4NF03L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STN4NF03L SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 10/12 STN4NF03L 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 21-Jun-2004 3 – Initial electronic version. – Document status promoted from preliminary data to datasheet 09-Oct-2006 4 Document reformatted no content change 27-Nov-2007 5 Updated marking on Table 1: Device summary 11-Dec-2007 6 Updated EAS value on Table 2: Absolute maximum ratings 11/12 STN4NF03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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