STN5PF02V P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STN5PF02V 20V <0.080Ω 4.2A ■ Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly 2 1 2 3 SOT-223 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely extremely low on-resistance when driven at 2.5V. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STN5PF02V N5PF02V SOT-223 Tape & reel August 2006 Rev 3 1/12 www.st.com 12 Contents STN5PF02V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STN5PF02V 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit VDS Drain-source voltage (VGS = 0) 20 V VGS Gate- source voltage ±8 V ID Drain current (continuous) at TC = 25°C 4.2 A ID Drain current (continuous) at TC = 100°C 2.6 A Drain current (pulsed) 17 A PTOT Total dissipation at TC = 25°C 2.5 W Tj Tstg Max. operating junction temperature Storage temperature –55 to 150 °C IDM 1. Parameter (1) Pulse width limited by safe operating area Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed Table 2. Thermal resistance Symbol Parameter Rthj-pcb (1) Thermal resistance junction-pc board Rthj-amb Thermal resistance junction-ambient Max value Unit 50 °C/W 90 °C/W 1. When mounted on FR-4 board of 1inch² pad, 2oz Cu and tc< 10sec 3/12 Electrical characteristics 2 STN5PF02V Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating,@125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 8V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 4.5V, ID = 2.1A VGS = 2.5V, ID = 2.1A Table 4. Symbol Test conditions Typ. Max 20 Unit V 1 10 µA µA ±100 nA 0.45 V 0.065 0.085 0.080 0.10 Ω Ω Typ. Max Unit Dynamic Parameter Test conditions Min gfs (1) Forward transconductance VDS = 15V , ID = 2.5A 6.6 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15V, f = 1 MHz, VGS = 0 412 179 42.5 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 10V, ID = 4.2A, VGS = 2.5V (see Figure 13) 4.5 0.73 1.75 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 4/12 Min 6 nC nC nC STN5PF02V Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min Typ. Max Unit 11 47 38 20 VDD = 10V, ID = 2.1A RG = 4.7Ω , VGS = 2.5V (see Figure 12) ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 4.2A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.2A, di/dt=100A/µs, VDD = 16V, Tj = 150°C (see Figure 14) 32 12.8 0.8 Max Unit 4.2 17 A A 1.2 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/12 Electrical characteristics STN5PF02V 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal inpedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STN5PF02V Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STN5PF02V Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for diode recovery behaviour 8/12 Figure 13. Gate charge test circuit STN5PF02V 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STN5PF02V SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V A1 10 o 10o 0.02 P008B 10/12 STN5PF02V 5 Revision history Revision history Table 7. Revision history Date Revision Changes 20-Jun-2005 1 First release 13-Dec-2005 2 Final version 04-Aug-2006 3 New template 11/12 STN5PF02V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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