STN83003 High voltage fast-switching NPN power transistor General features ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ SOT-223 plastic package for surface mounting circuits ■ Tape and reel packing 2 1 2 3 SOT-223 Applications ■ Electronics ballasts for fluorescent lighting ■ Switch mode power supplies Internal schematic diagrams Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor. Order codes Part Number Marking Package Packing STN83003 N83003 SOT-223 Tape & reel January 2007 Rev 2 1/11 www.st.com 11 STN83003 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STN83003 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Unit VCES Collector-emitter voltage (V BE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs, T j < 150°C) V(BR)EBO V 1.5 A 3 A Base current 0.75 A IBM Base peak current (tP < 5ms) 1.5 A Ptot Total dissipation at T c = 25°C 1.6 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 78 °C/W IC ICM IB TJ Table 2. Collector current Collector peak current (tP < 5ms) Max. operating junction temperature Thermal data Symbol Rthj-amb 1. Value Parameter Thermal resistance junction-ambient (1) Device mounted on PCB area of 1 _max cm 2. 3/11 Electrical characteristics 2 STN83003 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol V(BR)EBO (1) Emitter-base breakdown voltage (IC = 0) Collector-emitter sustaining voltage (IB = 0) Typ. Max. Unit T j = 125°C IE = 10mA 12 IC = 10mA 1 5 mA mA 18 V 400 L = 25mH V IB = 50mA 1 V IC = 0.5A IB = 0.1A 0.5 V Base-emitter saturation IC = 0.5A voltage IB = 0.1A 1 V Collector-emitter saturation voltage VBE(sat) (1) DC current gain Resistive load tr Rise time ts Storage time tf Fall time IC = 10mA VCE = 5V 10 IC = 0.35A VCE = 5V 16 IC = 1A VCE = 5V 4 IC = 0.35A VCC = 125V IB1 = -IB2 = 70mA TP ≥ 25µs (see figure 10) 25 32 100 1.5 2.2 ns 2.9 µs 0.2 µs Inductive load IC = 0.5A IB1 = 0.1A ts Storage time VBE(off) = -5V L = 10mH 450 ns tf Fall time VClamp = 300V (see figure 9) 90 ns 1. Pulsed duration = 300 µs, duty cycle ≤1.5% 4/11 Min. IC = 0.35A VCE(sat) (1) hFE Test Conditions Collector cut-off current VCE = 700V (VBE = -1.5V) VCE = 700V ICEV VCE(sus) Parameter STN83003 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. DC Current Gain Figure 3. DC Current Gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Resistive load storage time 5/11 Electrical characteristics 6/11 Figure 7. Resistive load storage time Figure 9. Inductive load fall time STN83003 Figure 8. Inductive load storage time STN83003 2.2 Test circuits Figure 10. Inductive load switching test circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast recovery rectifier Figure 11. Resistive load switching test circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 7/11 Package mechanical data 3 STN83003 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STN83003 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 9/11 Revision history 4 STN83003 Revision history Table 4. 10/11 Revision history Date Revision Changes 09-May-2006 1 Initial release. 17-Jan-2007 2 The device’s safe operating area curve has been added on page 5. STN83003 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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