STMICROELECTRONICS STP12IE90F4

STP12IE90F4
Emitter Switched Bipolar Transistor
ESBT® 900 V - 12 A - 0.083 Ω
General features
VCS(ON)
IC
1V
12A
RCS(ON)
0.083
■
High voltage / high current Cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch up to 150 kHz
■
Squared RBSOA up to 900V
■
Very low Ciss driven by RG = 47Ω
■
Very low turn-off cross over time
W
TO220FP-4L
Internal schematic diagrams
Applications
■
Flyback SMPS for adapter
■
Flyback / forward SMPS for desktop
Description
The STP12IE90F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00
0
00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000
000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00
00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000
00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00
0 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00
00 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
000 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00
00 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000 000
Order codes
Part Number
Marking
Package
Packing
STP12IE90F4
P12IE90F4
TO220FP-4L
Tube
January 2007
Rev 2
1/11
www.st.com
11
STP12IE90F4
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STP12IE90F4
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum rating
Symbol
Parameter
Value
Unit
VCS(SS)
Collector-source voltage (V BS = VGS = 0 V)
900
V
VBS(OS)
Base-source voltage (IC = 0, V GS = 0 V)
30
V
VSB(OS)
Source-base voltage (IC = 0, V GS = 0 V)
17
V
± 17
V
Collector current
12
A
Collector peak current (tP < 5ms)
36
A
Base current
6
A
IBM
Base peak current (tP < 5ms)
10
A
Ptot
Total dissipation at T c = 25°C
21
W
Tstg
Storage temperature
-40 to 150
°C
150
°C
Value
Unit
6
°C/W
VGS
IC
ICM
IB
TJ
Table 2.
Symbol
Rthj-case
Gate-source voltage
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
__max
3/11
Electrical characteristics
2
STP12IE90F4
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Parameter
ICS(SS)
Collector-source current
(VBS = V GS = 0)
VCE = 900V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 30V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 17V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 17V
100
nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A
IB = 0.6A
1
0.6
VGS = 10V_ IC = 12A VCS = 1V
5
15
hFE
DC current gain
VBS(ON)
Base Source ON voltage
VGS(th)
Gate threshold voltage
Ciss
QGS(tot)
ts
tf
ts
tf
VCSW
4/11
Electrical characteristics
Input capacitance
Gate-source Charge
Test Conditions
Min.
VGS = 10V_ IC = 6A_ VCS = 1V
VGS = 10V_ IC = 12A IB = 2.4A
VCS =25V
2
f =1MHz
VGS=0V
VCS=25V
VGS=10V
VCB=0V
IC =4A
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =6A
IB =0.6A
Maximum collectorsource voltage switched
without snubber
RG =47Ω
IC = 12A
hFE =5
IC =6A
V
V
1.5
1.2
VGS = 10V_ IC = 6A_ IB = 0.6A
VBS = VGS ______IB = 250µA
Typ. Max. Unit
IB =1.2A
900
3
V
V
4
V
520
pF
21.3
nC
610
ns
10
ns
360
ns
10
ns
V
STP12IE90F4
Electrical characteristics
Table 3.
Symbol
VCS(dyn)
VCS(dyn)
2.1
Electrical characteristics
Parameter
Collector-source
dynamic voltage
(500ns)
Collector-source
dynamic voltage
(1µs)
Test Conditions
Min.
VCC =VClamp =400V
IC = 6A
VGS =10V
IB = 1.2A
tpeak =500ns
RG =47Ω
IBpeak = 6A (IC )
VCC =VClamp =400V
IC = 6A
VGS =10V
IB = 1.2A
tpeak =500ns
RG =47Ω
IBpeak = 6A (IC )
Typ. Max. Unit
3.37
V
1.75
V
Electrical characteristics (curves)
Figure 1.
DC current gain
Figure 2.
Collector-source On voltage
Figure 3.
Collector-source On voltage
Figure 4.
Base-source On voltage
5/11
Electrical characteristics
6/11
STP12IE90F4
Figure 5.
Reverse biased SOA
Figure 6.
Figure 7.
Inductive load switching time Figure 8.
Dynamic collector-emitter
voltage
Inductive load switching time
STP12IE90F4
2.2
Electrical characteristics
Test circuits
Figure 9.
Static VCS(ON) test circuits
Figure 10. Inductive load switching and RBSOA test circuit
7/11
Package mechanical data
3
STP12IE90F4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STP12IE90F4
Package mechanical data
TO220FP-4L MECHANICAL DATA
DIM.
mm.
MIN.
A
4.30
A1
2.60
A2
1.30
b
0.50
b1
1.05
TYP
4.70
3
1.50
1.30
1.25
b4
1.50
c
0.45
D
15.50
E
9.80
e
2.29
e1
H1
1.70
0.70
b2
b3
MAX.
0.50
0.60
15.90
10.20
2.54
2.79
7.62
6.30
L
6.70
13.60
L1
3.30
L2
15.40
15.80
Dia P
3
3.40
Q
3.30
3.50
9/11
Revision history
STP12IE90F4
4
Revision history
Table 4.
Revision history
Date
Revision
28-Jul-2006
1
Initial release.
16-Jan-2007
2
New graphics
10/11
Changes
STP12IE90F4
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11/11