STP14NK50Z - STP14NK50ZFP STB14NK50Z-STB14NK50Z-1-STW14NK50Z N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS(on) ID Pw STP14NK50Z 500V <0.38Ω 14A 150W 3 1 STP14NK50ZFP 500V <0.38Ω 14A 35W STB14NK50Z 500V <0.38Ω 14A 150W STB14NK50Z-1 500V <0.38Ω 14A 150W STW14NK50Z 500V <0.38Ω 14A 150W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility 3 2 1 TO-220 2 TO-220FP TO-247 3 3 12 1 D2PAK I2PAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number Marking Package Packaging STP14NK50Z P14NK50Z TO-220 Tube STP14NK50ZFP P14NK50ZFP TO-220FP Tube STB14NK50ZT4 2 D PAK B14NK50Z 2 Tape & reel STB14NK50Z-1 B14NK50Z I PAK Tube STW14NK50Z W14NK50Z TO-247 Tube July 2006 Rev 3 1/19 www.st.com 19 Contents STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP I2PAK/D2PAK VDS VDGR VGS TO-247 Drain-source voltage (VGS = 0) 500 V Drain-gate voltage (RGS = 20KΩ) 500 V Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 14 14(1) 14 A ID Drain current (continuous) at TC=100°C 7.6 7.6(1) 7.6 A IDM(2) Drain current (pulsed) 48 48(1) 48 A PTOT Total dissipation at TC = 25°C 150 35 150 W Derating factor 1.20 0.28 1.20 W/°C Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) dv/dt (3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (DC) 4000 KV 4.5 V/ns -- 2500 Operating junction temperature Storage temperature V -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤13A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Value Symbol Parameter TO-220 I2PAK Rthj-case Rthj-pcb Rthj-a Tl Thermal resistance junction-case Max Thermal resistance junction-pcb Max (1) Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose D2PAK Unit TO-220FP TO-247 0.83 3.6 0.83 °C/ W °C/ W 60 62.5 50 300 °C/ W °C 1. When mounted on minimum footprint 3/19 Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Table 3. Avalanche characteristics Symbol Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 12 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 400 mJ Table 4. Symbol BVGSO 1.1 Parameter Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=±1mA (Open Drain) Min. Typ. 30 Max. Unit V Protection features og gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/19 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac- 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, TC =125°C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ±10 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 6A 0.34 0.38 Ω Max. Unit V(BR)DSS Table 6. Symbol gfs (1) Ciss Coss Crss Qgs Qgd 3 V Dynamic Parameter Test conditions Forward transconductance VDS =8V, ID = 6A Input capacitance Output capacitance Reverse transfer capacitance Coss eq(2). Equivalent output capacitance Qg 500 Total gate charge Gate-source charge Gate-drain charge Min. Typ. 12 S VDS =25V, f=1 MHz, VGS=0 2000 238 55 pF pF pF VGS=0, VDS =0V to 400V 150 pF 69 12 31 VDD=400V, ID = 12A VGS =10V 92 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Table 7. Symbol td(on) tr Switching times Parameter Turn-on delay time Rise time Test conditions VDD=250 V, ID=6A, RG=4.7Ω, VGS=10V (see Figure 19) Min. Typ. 24 16 Max. Unit ns ns 5/19 Electrical characteristics Table 7. td(off) tf tr(Voff) tf tc Table 8. Symbol STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - Switching times Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time RG=4.7Ω, VGS=10V (see Figure 19) VDD=400 V, ID=12A, RG=4.7Ω, VGS=10V (see Figure 21) 54 12 ns ns 9.5 9 20 ns ns ns Source drain diode Max Unit Source-drain current 12 A ISDM(1) Source-drain current (pulsed) 48 A VSD(2) Forward on voltage 1.6 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/19 VDD=250V, ID=6A, Test conditions Min Typ. ISD=12A, VGS=0 ISD=12A, di/dt = 100A/µs, VDD=35V, Tj=150°C (see Figure 21) 470 3.1 13.2 ns µC A STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac- 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 7/19 Electrical characteristics STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 8/19 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical characFigure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature Figure 17. Normalized BVgso vs temperature Figure 18. Maximum avalanche energy vs temperature 9/19 Test circuit 3 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Test circuit Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform 10/19 Figure 24. Switching time waveform STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Package mechani- 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/19 Package mechanical data STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 12/19 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Package mechani- TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/19 Package mechanical data STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 14/19 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Package mechani- TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 15/19 Package mechanical data STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 16/19 TYP 5.50 0.216 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z 5 Packaging me- Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19 Revision history 6 STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Revision history Table 9. 18/19 Revision history Date Revision Changes 21-Jun-2004 2 Complete version with curves 26-Jul-2006 3 New template, no content change STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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