STP40NF03L N-channel 30V - 0.018Ω - 40A - TO-220 STripFET™ Power MOSFET General features ■ Type VDSS RDS(on) ID STP40NF03L 30V <0.022Ω 40A Low threshold device Description 3 1 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 TO-220 Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP40NF03L P40NF03L TO-220 Tube February 2007 Rev 4 1/12 www.st.com 12 Contents STP40NF03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STP40NF03L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage Value Unit 30 V ± 16 V ID Drain current (continuous) at TC = 25°C 40 A ID Drain current (continuous) at TC = 100°C 28 A Drain current (pulsed) 160 A Total dissipation at TC = 25°C 70 W Derating Factor 0.46 W/°C Single pulse avalanche energy 250 mJ -55 to 175 °C IDM (1) Ptot EAS (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, ID = 20A, VDD = 15V Table 2. Thermal data Rthj-case Thermal resistance junction-case max 2.1 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose 300 °C 3/12 Electrical characteristics 2 STP40NF03L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max ratings VDS = max ratings, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ±16V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A Table 4. Symbol Test conditions Typ. Max. 30 1 Unit V 1 10 µA µA ±100 nA 1.7 2.5 V 0.018 0.028 0.022 0.035 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 10V, ID = 20A 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 770 255 60 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15V, ID = 20A RG = 4.7Ω VGS = 4.5V (see Figure 13) 14 80 25 16 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15V, ID = 40A, VGS = 4.5V (see Figure 14) 10.5 4 4.5 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/12 Min. 15 nC nC nC STP40NF03L Electrical characteristics Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 40A, VGS = 0 ISD = 40A, Reverse recovery time di/dt = 100A/µs, Reverse recovery charge VDD = 15V, Tj = 150°C Reverse recovery current (see Figure 15) 34.5 30 2 Max. Unit 40 160 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STP40NF03L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STP40NF03L Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized BVDSS vs. temperature 7/12 Test circuit 3 STP40NF03L Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STP40NF03L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP40NF03L TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/12 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP40NF03L 5 Revision history Revision history Table 6. Revision history Date Revision Changes 09-Sep-2004 1 Preliminary version 21-Jun-2005 2 Complete version with curves 16-Aug-2006 3 New template, no content change 21-Feb-2007 4 Typo mistake on page 1 11/12 STP40NF03L Please Read Carefully: Information in this document is provided solely in connection with ST products. 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