STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) Max ID PW STP50NF25 250 V <0.069 Ω 45 A 160 W STB50NF25 250 V <0.069 Ω 45 A 160 W ■ 100% avalanche tested ■ Gate charge minimized ■ Low intrinsic capacitances 3 3 1 1 D²PAK 2 TO-220 Application Switching applications Figure 1. Description Internal schematic diagram This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize onresistance and gate charge. It is therefore suitable as primary side switch allowing high efficiencies. Table 1. Device summary Order codes Marking Package Packaging STP50NF25 50NF25 TO-220 Tube STB50NF25 50NF25 D²PAK Tape & reel November 2007 Rev 4 1/14 www.st.com 14 Contents STB50NF25 - STP50NF25 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STB50NF25 - STP50NF25 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 250 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 45 A Drain current (continuous) at TC = 100 °C 28 A Drain current (pulsed) 180 A Total dissipation at TC = 25 °C 160 W Derating factor 1.28 W/°C 10 V/ns -55 to 150 °C Value Unit ID (1) ID (1) (2) IDM PTOT dv/dt (3) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Value limited by wire bonding 2. Pulse width limited by safe operating area 3. ISD ≤ 45 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.78 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit Avalanche current, repetitive or not-repetitive 32 A Single pulse avalanche energy 160 mJ Tl Table 4. Avalanche data Symbol IAR (1) EAS (2) Parameter 1. Pulse width limited by Tjmax 2. Starting TJ= 25 °C, ID = IAR, VDD = 50 V 3/14 Electrical characteristics 2 STB50NF25 - STP50NF25 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 22 A V(BR)DSS Table 6. Symbol Typ. Max. 250 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.055 0.069 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS =10 V, ID = 22 A 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 2670 465 70.5 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=200 V, ID = 45 A VGS =10 V (see Figure 14) 68.2 12.2 33.4 nC nC nC RG Gate input resistance f=1 MHz Gate Bias, Bias=0 Test signal level=20 mV open drain 1.1 Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/14 Min. STB50NF25 - STP50NF25 Table 7. Symbol Electrical characteristics Switching times Parameter Test conditions Min Typ Max Unit td(on) tr Turn-on delay time Rise time VDD = 125 V, ID = 22 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) 45 26 ns ns td(off) tf Off-voltage rise time Fall time VDD = 125 V, ID = 22 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) 63 20 ns ns Table 8. Symbol Source drain diode Parameter Test conditions Min Typ Max Unit 45 180 A A 1.5 V ISD ISDM Source-drain current Source-drain current (pulsed) VSD Forward on voltage ISD = 45 A, VGS = 0 trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 45 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18) 198 1.5 15 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18) 256 2.2 17 ns µC A IRRM trr Qrr IRRM 5/14 Electrical characteristics STB50NF25 - STP50NF25 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/14 STB50NF25 - STP50NF25 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit 3 STB50NF25 - STP50NF25 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Figure 18. Switching time waveform STB50NF25 - STP50NF25 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB50NF25 - STP50NF25 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/14 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB50NF25 - STP50NF25 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 11/14 Packaging mechanical data 5 STB50NF25 - STP50NF25 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB50NF25 - STP50NF25 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 07-Mar-2007 1 First release 10-Mar-2007 2 Typo mistake on page 1 (marking) 13-Apr-2007 3 Corrected value on Table 6. 14-Nov-2007 4 Added new section: Electrical characteristics (curves) 13/14 STB50NF25 - STP50NF25 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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