STS17NH3LL N-channel 30V - 0.004Ω - 17A - SO-8 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STS17NH3LL 30V <0.0057Ω 17A(1) 1. This value is rated according to Rthj-pcb ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Improved junction-case thermal resistance ■ Low threshold device SO-8 Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS17NH3LL 17H3LL- SO-8 Tape & reel January 2007 Rev 2 1/12 www.st.com 12 Contents STS17NH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS17NH3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 16 V Drain current (continuous) at TC = 25°C 17 A Drain current (continuous) at TC = 100°C 10.6 A VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ID (1) ID IDM (2) Drain current (pulsed) 68 A Ptot (1) Total dissipation at TC = 25°C 2.7 W -55 to 150 °C Value Unit 47 °C/W Tstg Tj Storage temperature Operating junction temperature 1. This value is rated according to Rthj-pcb 2. Pulse width limited by safe operating area Table 2. Symbol Rthj-pcb(1) Thermal resistance Parameter Thermal resistance junction-ambient max 1. When mounted on 1inch² FR-4 board, 2oz of Cu and t< 10sec 3/12 Electrical characteristics 2 STS17NH3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 8.5A V(BR)DSS Table 4. Symbol Min Typ. Max 30 Unit V 1 10 µA µA ±100 nA 1 V 0.004 0.005 0.0057 0.0075 Ω Ω Typ. Max Unit Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS=25V, f=1MHz, VGS = 0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID=17A VGS=4.5V (see Figure 13) Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain RG 4/12 On/off states Min 1810 565 41 0.5 pF pF pF 18 4.8 5.3 24 nC nC nC 1.5 3 Ω STS17NH3LL Electrical characteristics Table 5. Symbol Switching times Parameter Test conditions Min Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 15V, ID = 8.5A RG = 4.7Ω , VGS = 10V (see Figure 15) 8 65 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 8.5A RG = 4.7Ω , VGS = 10V (see Figure 15) 38 20 ns ns Table 6. Symbol ISD ISDM VSD (1) trr Qrr IRRM Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 17A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17A, di/dt = 100A/µs VDD = 15V, Tj = 25°C (see Figure 14) 22 32 1.9 Max Unit 17 68 A A 1.3 V ns nC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STS17NH3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STS17NH3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STS17NH3LL Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STS17NH3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS17NH3LL SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS17NH3LL 5 Revision history Revision history Table 7. Revision history Date Revision Changes 01-Aug-2006 1 First release 09-Jan-2007 2 Complete version 11/12 STS17NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. 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