STS5DNF20V N-channel 20V - 0.030Ω - 5A SO-8 2.7V - drive STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STS5DNF20V 20V <0.040Ω (@) 4.5) <0.045Ω (@) 2.7) 5A ■ Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface mount assembly S0-8 Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS5DNF20V S5DNF20V SO-8 Tape & reel November 2006 Rev 5 1/12 www.st.com 12 Contents STS5DNF20V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS5DNF20V 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 20 V VGS Gate- source voltage ±12 V ID Drain current (continuos) at TC = 25°C 5 A ID Drain current (continuos) at TC = 100°C 3 A Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25°C dual operation 1.6 W PTOT Total dissipation at TC = 25°C single operation 2 W Rthj-a Thermal resistance junction-ambient single operation Thermal resistance junction-ambient dual operation 62.5 78 °C/W °C/W TJ Max. operating junction temperature -55 to 150 °C Storage temperature -55 to 150 °C IDM (1) 1. Pulse width limited by safe operating area Table 2. Tstg Thermal data 3/12 Electrical characteristics 2 STS5DNF20V Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating VDS=Max rating, TC=125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 12V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 4.5V, ID = 2.5A VGS = 2.7V, ID = 2.5A Table 4. Symbol gfs (1) Test conditions Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA 0.6 V 0.030 0.037 0.040 0.045 Typ. Max. Ω Ω Dynamic Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS = 15V, ID=2.5 A VDS = 25V, f = 1 MHz, VGS = 0 10 S 460 pF 200 pF 50 pF 8.5 VDD = 16V, ID = 5A, VGS = 4.5V (see Figure 13) Unit 11.5 nC 1.8 nC 2.4 nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 . Table 5. Symbol 4/12 Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=10 V, ID=2.5A, RG=4.7Ω, VGS= 4.5V (see Figure 12) 7 33 ns ns td(off) tf Turn-off Delay Time Fall Time VDD = 10 V, ID = 2.5A RG=4.7Ω, VGS = 4.5V (see Figure 12) 27 10 ns ns STS5DNF20V Electrical characteristics Table 6. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 5 A ISDM (1) Source-drain current (pulsed) 20 A VSD (2) Forward on voltage ISD = 5A, VGS = 0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5A, VDD = 10V di/dt = 100A/µs, Tj = 150°C (see Figure 14) trr Qrr IRRM 26 13 1 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/12 Electrical characteristics STS5DNF20V 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS5DNF20V Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STS5DNF20V Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STS5DNF20V 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STS5DNF20V SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS5DNF20V 5 Revision history Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 4 Complete document 13-Nov-2006 5 The document has been reformatted 11/12 STS5DNF20V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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