STS7PF30L P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STS7PF30L 30V <0.021Ω 7A ■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ■ LOW THRESHOLD DRIVE SO-8 Description This Power MOSFET is the latest development of STMicroelectronics’ unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing densisty for low on-resistance, rugged avalanche characteristics and less critical alignment steps, therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT. ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT Order Codes Sales Type Marking Package Packaging STS7PF30L S7PF30L SO-8 TAPE & REEL November 2005 Rev 5 1/11 www.st.com 11 STS7PF30L 1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Value Unit Drain-Source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20kΩ) 30 V ± 20 V Gate-Source Voltage ID Drain Current (continuous) at TC = 25°C 7 A ID Drain Current (continuous) at TC = 100°C 4.4 A Drain Current (pulsed) 28 A Total Dissipation at TC = 25°C 2.5 W 50 °C/W 150 -55 to 150 °C °C IDM Note 1 PTOT Table 2. Rthj-amb Note 2 Tj Tstg 2/11 Parameter Thermal data Thermal Resistance Junction-ambient Operating Junction Temperature Storage Temperature Range STS7PF30L 2 2 Electrical characteristics Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 3. On/off states Symbol Parameter Test Conditions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current (VDS = 0) VDS = ± 16V VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA RDS(on) Static Drain-Source On Resistance VGS= 10 V, ID= 3.5A Table 4. Symbol gfs Note 3 Ciss Coss Crss Qg Qgs Qgd Table 5. Symbol td(on) tr td(off) tf ID = 250µA, V GS= 0 Min. Typ. 30 Unit V VDS = Max Rating, VDS = Max Rating, Tc=125°C VGS= 4.5 V, ID = 3.5A Max. 1 10 µA µA ±100 nA 1 1.6 2.5 V 0.011 0.016 0.016 0.022 0.021 0.028 Ω Ω Min. Typ. Max. Unit Dynamic Parameter Forward Transconductance Test Conditions VDS = 20V, ID= 3.5A 16 S Input Capacitance VDS = 25V, f = 1MHz, V GS =0 Output Capacitance Reverse Transfer Capacitance 2600 523 174 pF pF pF Total Gate Charge Gate-Source Charge Gate-Drain Charge 28 8.75 12.35 7 nC nC nC Typ. Max. Unit VDD= 15V, ID= 7A, VGS= 4.5V Switching times Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VDD = 15V, ID = 3.5A RG= 4.7Ω, VGS= 4.5V, (see Figure 13) VDD = 15V, ID = 3.5A RG= 4.7Ω, VGS= 4.5V, (see Figure 13) Min. 68 54 ns ns 65 23 ns ns 3/11 STS7PF30L 2 Electrical characteristics Table 6. Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. ISD Source-Drain Current ISDM Note 1 Source-Drain Current (pulsed) VSD trr Qrr IRRM Forward On Voltage ISD = 7A, V GS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7A, di/dt = 100A/µs VDD = 15V, Tj = 150°C (see Figure 15) Max. Unit 7 28 A A 1.2 V 40 46 2.3 (1) Pulse with limited by safe operating area (2) When mounted on 1inch² FR-4 board (t ≤ 10µs) (3) Pulsed: pulse duration = 300µs, duty cycle 1.5% Note: 4/11 For the P-CHANNEL MOSFET the polarity of voltages and current have to be reversed ns nC A STS7PF30L 2.1 2 Electrical characteristics Electrical characteristics (curves) Figure 1. Safe Operating Area Figure 2. Thermal Impedance Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Static Drain-Source on Resistance 5/11 STS7PF30L 2 Electrical characteristics Figure 7. Gate Charge vs Gate-Source Voltage Figure 8. Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs vs Temperature Temperature Figure 11. Source-Drain Diode Forward Characteristics 6/11 Capacitance Variations Figure 12. Normalized Breakdown Voltage vs Temperature STS7PF30L 3 3 Test Circuits Test Circuits Figure 13. Switching Times Test Circuit For Resistive Load Figure 14. Gate Charge Test Circuit Figure 15. Test Circuit For Inductive Load Switching and Diode Recovery Times 7/11 4 Package Mechanical Data 4 STS7PF30L Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STS7PF30L 4 Package Mechanical Data SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.244 0.050 0.6 0.157 0.050 0.023 8 (max.) 9/11 STS7PF30L 5 Revision History 5 10/11 Revision History Date Revision Changes 13-Dec-2003 1 First Issue 25-Jun-2004 2 Preliminary Data 18-Jan-2005 3 Modified value on table 5 29-Sep-2005 4 Complete version 09-Nov-2005 5 New template STS7PF30L 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11