STMICROELECTRONICS STTH102A

STTH102
High efficiency ultrafast diode
Main product characteristics
IF(AV)
1A
VRRM
200 V
Tj (max)
175° C
VF(max)
0.78 V
trr (max)
20 ns
A
A
K
K
Features and benefits
SMA
(JEDEC DO-214AC)
STTH102A
■
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
Description
Marking
STTH102A
U12
STTH102
STTH102
STTH102RL
STTH102
Parameter
VRRM
Repetitive peak reverse voltage
IF(AV)
Average forward current
IFSM
Surge non repetitive forward
current
Tstg
Storage temperature range
dV/dt
Part Number
Absolute ratings (limiting values)
Symbol
Tj
STTH102
Order codes
The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
Table 1.
DO-41
SMA
TL = 148° C δ = 0.5
DO-41
TL = 130° C δ = 0.5
SMA
Unit
200
V
1
A
40
tp = 10 ms Sinusoidal
DO-41
A
50
Maximum operating junction temperature
Critical rate of rise of reverse voltage
November 2006
Value
Rev 5
-65 to + 175
°C
175
°C
10000
V/µs
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Characteristics
STTH102
1
Characteristics
Table 2.
Thermal resistance
Symbol
Rth(j-l)
Parameter
30
DO-41
50
°C/W
Lead length = 10 mm
Static Electrical Characteristics
Symbol
VF(2)
SMA
Unit
Junction to lead
Table 3.
IR (1)
Value
Parameter
Tests conditions
Tj = 25° C
Reverse leakage current
Typ
Max.
Unit
1
Tj = 125° C
Tj = 25° C
Forward voltage drop
Min.
Tj = 125° C
VR = VRRM
µA
1
25
IF = 700 mA
(SMA)
0.90
IF = 1 A
0.97
IF = 1 A
0.68
V
0.78
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.130 IF2(RMS)
Table 4.
Dynamic electrical characteristics
Symbol
Parameter
Tests conditions
Typ
Max
Unit
20
ns
trr
Reverse recovery time
Tj = 25° C
IF = 0.5 A Irr = 0.25 A
IR = 1 A
12
tfr
Forward recovery time
Tj = 25° C
IF = 1 A dIF/dt = 50 A/ms
VFR = 1.1 x VFmax
50
ns
Forward recovery voltage
Tj = 25° C
IF = 1 A dIF/dt = 50 A/ms
1.8
V
VFP
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(SMA)
PF(AV)(W)
Average forward power dissipation
versus average forward current
(DO-41)
PF(AV)(W)
1.0
1.0
δ = 0.05
0.9
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
0.9
δ = 0.1
δ = 0.2
δ = 0.5
0.8
0.8
δ=1
0.7
δ=1
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
T
T
0.2
0.1
IF(AV)(A)
δ=tp/T
0.0
0.0
2/7
Min
0.2
0.4
0.6
0.8
1.0
0.2
0.1
IF(AV)(A)
tp
0.0
1.2
0.00
0.25
0.50
0.75
δ=tp/T
1.00
tp
1.25
STTH102
Characteristics
Figure 3.
Average forward current versus
Figure 4.
ambient temperature (δ = 0.5) (SMA)
IF(AV)(A)
Average forward current versus
ambient temperature (δ = 0.5)
(DO-41)
IF(AV)(A)
1.2
1.2
Rth(j-a)=Rth(j-I)
Rth(j-a)=Rth(j-I)
1.0
1.0
0.8
0.8
Rth(j-a)=120°C/W
0.6
Rth(j-a)=110°C/W
0.6
0.4
0.4
T
T
0.2
0.2
δ=tp/T
0.0
0
50
75
100
125
150
0
175
1.0
0.9
0.9
0.8
0.8
75
100
125
150
175
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
0.7
0.7
0.6
δ = 0.5
0.5
δ = 0.5
0.5
0.4
0.2
50
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
0.3
Tamb(°C)
tp
25
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (epoxy
printed circuit board, e(Cu) = 35 µm,
recommended pad layout) (SMA)
1.0
0.6
δ=tp/T
0.0
25
Figure 5.
Tamb(°C)
tp
0.4
δ = 0.2
0.3
T
δ = 0.1
0.2
0.1
δ=tp/T
tp(s)
Single pulse
0.1
tp
0.0
T
δ = 0.2
δ = 0.1
δ=tp/T
tp(s)
Single pulse
tp
0.0
1.E-01
1.E+00
Figure 7.
1.E+01
1.E+02
1.E+03
Forward voltage drop versus
forward current
1.E-01
Figure 8.
IFM(A)
1.E+00
1.E+01
1.E+02
1.E+03
Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100.0
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=125°C
(maximum values)
10.0
Tj=125°C
(typical values)
10
Tj=25°C
(maximum values)
1.0
VR(V)
VFM(V)
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
1
10
100
1000
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Characteristics
Figure 9.
STTH102
Reverse recovery time versus dIF/dt Figure 10. Peak recovery current versus dIF/dt
(90% confidence)
(90% confidence)
trr(ns)
IRM(A)
3.5
70
IF=1A
VR=100V
Tj=125°C
60
IF=1A
VR=100V
Tj=125°C
3.0
2.5
50
2.0
40
Tj=125°C
Tj=125°C
1.5
30
Tj=25°C
1.0
20
Tj=25°C
0.5
10
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0.0
1
10
100
1000
Figure 11. Reverse recovery charges versus
dIF/dt (90% confidence)
1
10
100
1000
Figure 12. Relative variations of dynamic
parameters versus junction
temperature
Qrr(nC)
IRM; trr; Qrr [Tj] / IRM; trr; Qrr [Tj =25°C]
35.0
3.5
32.5
IF=IF(AV)
dIF/dt=200A/µs
VR=100V
IF=1A
VR=100V
30.0
3.0
27.5
25.0
QRR
22.5
20.0
2.5
Tj=125°C
17.5
15.0
2.0
12.5
trr
10.0
Tj=25°C
7.5
1.5
IRM
5.0
2.5
Tj(°C)
dIF/dt(A/µs)
0.0
1
10
1.0
100
1000
25
50
75
100
125
150
175
Figure 14. Thermal resistance versus
lead length (DO-41)
Figure 13. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMA)
Rth(°C/W)
Rth(j-a)(°C/W)
120
120
110
110
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
Rth(j-a)
20
20
10
10
S(cm²)
0
Lleads(mm)
0
0.0
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Rth(j-I)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5
10
15
20
25
STTH102
2
Package information
Package information
●
Epoxy meets UL94 V0
Table 5.
SMA Dimensions
Dimensions
Ref.
E1
D
E
A1
A2
C
L
b
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.094
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.40
0.006
0.016
D
2.25
2.90
0.089
0.114
E
4.80
5.35
0.189
0.211
E1
3.95
4.60
0.156
0.181
L
0.75
1.50
0.030
0.059
Figure 15. Footprint (dimensions in mm)
2.63
1.4
1.4
1.64
5.43
Table 6.
DO-41 (Plastic) Package dimensions
Dimensions
Ref.
ØD ØB
A
C
A
C
Millimeters
Inches
Min.
Max.
Min.
Max.
4.1
5.20
0.160
0.205
2.71
0.080
0.107
B
2
C
25.4
D
0.712
1
0.863
0.028
0.034
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
4
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STTH102
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH102A
U12
SMA
0.068 g
5000
Tape and reel
STTH102
STTH102
DO-41
0.34 g
2000
Ammopack
STTH102RL
STTH102
DO-41
0.34 g
5000
Tape and reel
Revision history
Date
Revision
Description of Changes
Jul-2003
2A
Aug-2004
3
SMA package dimensions update. Reference A1 max. changed
from 2.70mm (0.106inc.) to 2.03mm (0.080). SMA and DO-41
datasheets merged
27-Jun-2005
4
Corrected error in title.
21-Nov-2006
5
Reformatted to current standards. Added Table 4. Dynamic
electrical characteristics. Updated dimensions table for DO-41
Plastic package. Added cathode bands to package illustrations.
Last update.
STTH102
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