STTH1212 Ultrafast recovery - 1200 V diode Main product characteristics A IF(AV) 12 A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns A K TO-220AC STTH1212D Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature K A NC D2PAK STTH1212G Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. K Order codes Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. Part Number Marking STTH1212D STTH1212D STTH1212G STTH1212G STTH1212G-TR STTH1212G The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/9 www.st.com 9 Characteristics STTH1212 1 Characteristics Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 1200 V 30 A 12 A IF(AV) Average forward current, δ = 0.5 IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 160 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A Tstg Storage temperature range -65 to + 175 °C 175 °C Tj Table 2. Maximum operating junction temperature Thermal parameter Symbol Parameter Junction to case Rth(j-c) Table 3. Symbol IR(1) Tc = 130° C Value Unit 1.6 °C/W Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ Forward voltage drop Tj = 125° C µA 7 70 2.2 IF = 12 A Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.5 x IF(AV) + 0.033 IF2(RMS) 2/9 Unit 10 VR = VRRM Tj = 25° C VF(2) Max. 1.30 2.0 1.25 1.9 V STTH1212 Characteristics Table 4. Dynamic characteristics Symbol Parameter trr Test conditions Min. Typ IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Reverse recovery time Max. Unit 100 ns IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 50 70 Reverse recovery current IF = 12 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 16 24 A S Softness factor IF = 12 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 2 tfr Forward recovery time dIF/dt = 50 A/µs IF = 12 A VFR = 1.5 x VFmax, Tj = 25° C 400 ns Forward recovery voltage IF = 12 A, dIF/dt = 50 A/µs, Tj = 25° C IRM VFP Figure 1. Conduction losses versus average current Figure 2. P(W) 6 V Forward voltage drop versus forward current IFM(A) 30 100 δ = 0.1 δ = 0.2 δ = 0.5 90 δ = 0.05 25 Tj=150°C (typical values) 80 δ=1 70 20 60 15 50 Tj=25°C (maximum values) 40 10 Tj=150°C (maximum values) 30 T 20 5 IF(AV)(A) δ=tp/T 10 tp VFM(V) 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3/9 Characteristics Figure 3. STTH1212 Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Zth(j-c)/Rth(j-c) 1.0 40 0.9 35 VR=600V Tj=125°C IF=2 x IF(AV) 0.8 30 0.7 IF=IF(AV) 25 0.6 IF=0.5 x IF(AV) 0.5 20 0.4 15 0.3 Single pulse 10 0.2 5 0.1 tp(s) dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 Figure 5. 1.E-01 1.E+00 Reverse recovery time versus dIF/dt (typical values) 0 50 Figure 6. trr(ns) 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) 600 5.0 VR=600V Tj=125°C 550 500 VR=600V Tj=125°C 4.5 4.0 IF=2 x IF(AV) 450 IF=2 x IF(AV) 3.5 400 3.0 IF=IF(AV) 350 2.5 IF=0.5 x IF(AV) 300 2.0 250 1.5 200 1.0 150 IF=IF(AV) IF=0.5 x IF(AV) 0.5 dIF/dt(A/µs) 100 dIF/dt(A/µs) 0.0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) 0 50 Figure 8. S factor 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature 2.25 4.0 IF ≤ 2xIF(AV) VR=600V Tj=125°C 3.5 IF=IF(AV) VR=600V Reference: Tj=125°C 2.00 1.75 3.0 1.50 2.5 1.25 S factor 1.00 trr 2.0 0.75 1.5 0.50 1.0 0.25 QRR Tj(°C) dIF/dt(A/µs) 0.00 0.5 25 0 4/9 IRM 50 100 150 200 250 300 350 400 450 500 50 75 100 125 STTH1212 Figure 9. Characteristics Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 750 45 IF=IF(AV) Tj=125°C 40 IF=IF(AV) VFR=1.5 x VF max. Tj=125°C 700 650 35 600 30 550 25 500 20 450 400 15 350 10 300 5 250 dIF/dt(A/µs) 0 dIF/dt(A/µs) 200 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) 0 100 200 300 400 500 Figure 12. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, ecu = 35 µm) Rth(j-a)(°C/W) C(pF) 80 1000 F=1MHz VOSC=30mVRMS Tj=25°C 70 60 100 50 40 30 10 20 10 SCU(cm²) VR(V) 0 1 1 10 100 1000 0 5 10 15 20 25 30 35 40 5/9 Package mechanical data 2 STTH1212 Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC) Maximum torque value: 0.7 Nm (TO-220AC) Table 5. T0-220AC dimensions DIMENSIONS REF. A H2 ØI C Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L5 L7 L6 L2 F1 D L9 L2 L4 F M E G 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 6/9 16.40 typ. 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 STTH1212 Package mechanical data D2PAK dimensions Table 6. DIMENSIONS REF. A E C2 L2 D L L3 Millimeters Inches Min. Max Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R 0.40 typ. V2 0° 0.016 typ. 8° 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 3.70 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information 3 4 8/9 STTH1212 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH1212D STTH1212D TO-220AC 1.86 g 50 Tube 2 STTH1212G STTH1212G D PAK 1.48 g 50 Tube STTH1212G-TR STTH1212G D2PAK 1.48 g 1000 Tape & reel Revision history Date Revision 02-Mar-2006 1 Description of Changes First issue. STTH1212 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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