STMICROELECTRONICS STTH212U

STTH212
High voltage ultrafast diode
Main product characteristics
A
IF(AV)
2A
VRRM
1200 V
Tj
175°C
VF (typ)
1.0 V
trr (max)
75 ns
K
DO-201AD
STTH212
Features and benefits
■
Low forward voltage drop
■
High reliability
■
High surge current capability
■
Soft switching for reduced EMI disturbances
■
Planar technology
Description
SMB
STTH212U
SMC
STTH212S
Order codes
The STTH212, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling,
clamping,
snubbering,
demagnetization in power supplies and other
power switching applications.
Part Number
Marking
STTH212
STTH212
STTH212RL
STTH212
STTH212U
U22
Housed in axial, SMB, and SMC packages, this
diode will reduce the losses in high switching
freqency operations.
STTH212S
S12
June 2005
Rev 1
1/9
www.st.com
9
STTH212
1 Electrical characteristics
1
Electrical characteristics
Table 1.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
V(RMS)
RMS voltage
850
V
2
A
IF(AV)
IF(RMS)
Average forward current
δ = 0.5
DO-201AD
Tl = 105°C
SMB
Tl = 90°C
SMC
Tl = 105°C
RMS forward current
DO-201AD, SMB, SMC
10
A
IFSM
Forward surge current tp = 8.3ms
DO-201AD, SMB, SMC
40
A
Tstg
Storage temperature range
-50 to + 175
°C
175
°C
Value
Unit
Tj
Table 2.
Maximum operating junction temperature
Thermal parameters
Symbol
Parameter
L = 10 mm
Rth(j-l)
Rth(j-a)
Table 3.
Symbol
IR
Junction to lead
Junction to ambient
L = 10 mm
DO-201AD
20
SMB
25
SMC
20
DO-201AD
75
°C/W
Static Electrical Characteristics
Parameter
Reverse leakage current
Test conditions
Tj = 25°C
Tj = 125°C
Min.
Typ
Forward voltage drop
Tj = 125°C
Tj = 150°C
Max.
Unit
10
VR = VRRM
µA
100
Tj = 25°C
VF
°C/W
1.75
IF = 2A
1.07
1.50
1.0
-
V
To evaluate the conduction losses use the following equation: P = 1.26 x IF(AV) + 0.12 IF2(RMS)
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STTH212
Table 4.
1 Electrical characteristics
Dynamic Electrical Characteristics
Symbol
Parameter
trr
Test conditions
Reverse recovery
time
tfr
Forward recovery
time
VFP
Forward recovery
voltage
Figure 1.
Min.
Tj = 25°C
IF = 1A dIF/dt = -100 A/µs VR =30V
Tj = 25°C
IF = 2A
dIF/dt = 50 A/µs
VFR = 1.1 x VFmax
Conduction losses versus average
forward current
Figure 2.
Typ
Max.
Unit
75
ns
500
ns
30
V
Forward voltage drop versus
forward current
IFM(A)
P(W)
50
4.0
δ = 0.05
3.5
δ = 0.1 δ = 0.2
δ = 0.5
45
Tj=125°C
(maximum values)
40
3.0
35
δ=1
2.5
Tj=125°C
(typical values)
30
2.0
25
1.5
20
1.0
Tj=25°C
(maximum values)
15
T
10
0.5
IF(AV)(A)
0.0
0.00
0.25
Figure 3.
1.0
0.50
0.75
1.00
1.25
1.50
δ=tp/T
1.75
2.00
5
tp
2.25
2.50
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
LLeads = 10mm)
Zth(j-a)/Rth(j-a)
0.9
VFM(V)
0
0.0
Figure 4.
1.0
0.9
DO-201AD
Lleads=10mm
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
SCU = 1cm2)
Zth(j-a)/Rth(j-a)
SMB
SCu=1cm²
0.2
0.2
0.1
0.0
1.E-01
0.5
0.1
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
0.0
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
3/9
STTH212
1 Electrical characteristics
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
SCU = 1cm2)
Figure 6.
IRM(A)
Zth(j-a)/Rth(j-a)
1.0
Reverse recovery current versus
dIF/dt (typical values)
11
0.9
SMC
SCu=1cm²
V R =600V
Tj=125°C
10
0.8
9
0.7
8
0.6
7
0.5
6
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV )
5
0.4
4
0.3
3
0.2
2
0.1
tp(s)
0.0
1.E-01
dlF/dt(A/µs)
1
0
1.E+00
1.E+01
1.E+02
1.E+03
0
20
Reverse recovery time versus dIF/dt Figure 8.
(typical values)
Figure 7.
trr(ns)
40
60
80
100
120
140
160
180
200
Reverse recovery charges versus
dIF/dt (typical values)
Qrr(nC)
900
1400
VR=600V
Tj=125°C
800
V R =600V
Tj=125°C
1200
IF=2 x IF(AV)
700
1000
600
800
500
IF=2 x F(AV)
I
400
IF=IF(AV)
600
IF=IF(AV)
300
IF=0.5 x IF(AV)
400
200
200
IF=0.5 xF(AV)
I
100
dlF/dt(A/µs)
dlF/dt(A/µs)
0
0
50
Figure 9.
100
150
200
250
300
0
350
400
450
0
500
Softness factor versus dIF/dt
(typical values)
50
100
150
200
250
300
350
400
450
500
Figure 10. Relative variations of dynamic
parameters versus junction
temperature
SFACTOR
6.0
1.0
IF=IF(AV)
V R =600V
Tj=125°C
5.5
5.0
0.9
4.0
0.7
3.5
0.6
3.0
0.5
2.5
IR M
Q RR
0.4
2.0
0.3
1.5
0.2
1.0
0.5
0
25
50
75
100
125
150
Tj(°C)
0.1
dlF/dt(A/µs)
0.0
4/9
S FAC TO R
0.8
4.5
IF=IF(AV)
V R =600V
R eference:Tj=125°C
0.0
175
200
225
250
25
50
75
100
125
STTH212
1 Electrical characteristics
Figure 11. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 12. Forward recovery time versus dIF/dt
(typical values)
VFP(V)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
tFR(ns)
420
IF=IF(AV)
Tj=125°C
400
IF=IF(AV)
V FR =1.1 x V F m ax.
Tj=125°C
380
360
340
320
300
280
260
240
220
dlF/dt(A/µs)
dlF/dt(A/µs)
200
0
10
20
30
40
50
60
70
80
90
100
Figure 13. Junction capacitance versus
reverse voltage applied (typical
values)
0
20
40
60
80
100
Figure 14. Thermal resistance versus lead
length
Rth(j-a)(°C/W)
C(pF)
100
100
F=1MHz
Vosc=30mVRMS
Tj=25°C
DO201-AD
90
Rth(j-a)
80
70
60
50
10
Rth(j-l)
40
30
20
10
VR(V)
1
1
LLeads(mm)
0
10
100
5
1000
10
15
20
25
Figure 16. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, ecu = 35 µm)
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, eCU = 35µm)
Rth(j-a)(°C/W)
Rth(j-a)(°C/W)
110
80
100
DO-201AD
70
90
60
80
50
70
SMB
60
40
SMC
50
30
40
20
30
20
10
10
SCu(cm2)
0
0
1
2
3
4
5
SCu(cm2)
0
6
7
8
9
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5/9
STTH212
2 Package mechanical data
2
Package mechanical data
Table 5.
SMB dimensions
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
Figure 17. SMB references to dimensions
table
Figure 18. SMB footprint dimensions
(in millimetres)
E1
2.23
1.64
2.23
D
2.30
E
A1
6.10
C
6/9
A2
L
b
STTH212
2 Package mechanical data
Table 6.
SMC dimensions
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
2.90
3.2
0.114
0.126
c
0.15
0.41
0.006
0.016
E
7.75
8.15
0.305
0.321
E1
6.60
7.15
0.260
0.281
E2
4.40
4.70
0.173
0.185
D
5.55
6.25
0.218
0.246
L
0.75
1.60
0.030
0.063
Figure 19. SMC references to dimensions
table
Figure 20. SMC footprint dimensions
(in millimetres)
E1
2.20
4.25
2.20
D
3.30
E
A1
8.65
A2
C
E2
Table 7.
L
b
DO-201AD dimensions
DIMENSIONS
B
B
A
E
Note 1
E
REF.
Millimeters
Inches
Note 1
ØD
Note 2
ØC
Min.
Max.
Min.
Max.
A
-
9.5
-
0.37
B
25.4
-
1.00
-
C
-
5.3
-
0.21
D
-
1.3
-
0.051
E
-
1.25
-
0.048
Note: 1 The lead diameter D is not controlled over zone E.
2 The minimum length which must stay straight between the right angles after bending is 15 mm
(0.59 inch).
7/9
STTH212
3 Ordering information
3
4
8/9
Ordering information
Part Number
Marking
STTH212
STTH212
Package
Weight
DO-201AD
1.12 g
Base qty
Delivery mode
600
Ammopack
1900
Tape & reel
STTH212RL
STTH212
STTH212U
U22
SMB
0.11 g
2500
Tape & reel
STTH212S
S12
SMC
0.243 g
2500
Tape & reel
Revision history
Date
Revision
28-Jun-2005
1
Description of Changes
First issue.
STTH212
4 Revision history
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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