STTH602C Ultrafast recovery diode Main product characteristics IF(AV) 2x3A VRRM 200 V Tj (max) 175° C VF (typ) 0.80 V trr (typ) 14 ns A1 A2 K Features and benefits ■ Suited for SMPS ■ Low losses ■ Low forward and reverse recovery time ■ High surge current capability ■ High junction temperature ■ insulated package: TO-220FPAB A2 A2 A1 A1 TO-220AB STTH602CT Description K K TO-220FPAB STTH602CFP Dual center tap diode suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-22FPAB, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection. April 2006 Order codes Part Number Marking STTH602CT STTH602C STTH602CFP STTH602C Rev 1 1/9 www.st.com Characteristics STTH602C 1 Characteristics Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 22 A TO-220AB IF(AV) Average forward current, δ = 0.5 TO-220FPAB IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Table 2. Per diode Tc = 160° C 3 Per device Tc = 155° C 6 Per diode Tc = 150° C 3 Per device Tc = 140° C 6 A A tp = 10 ms Sinusoidal Maximum operating junction temperature 60 A -65 to + 175 °C 175 °C Value Unit Thermal parameters Symbol Parameter Per diode 5 Per device 3.0 Per diode 7.5 Per device 5.25 TO-220AB Per diode 1 TO-220FPAB Per diode 3 TO-220AB Rth(j-c) Junction to case ° C/W TO-220FPAB Rth(c) Coupling When the two diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VF(2) Forward voltage drop Tj = 150° C Tj = 25° C Tj = 150° C Max. Unit 3 VR = VRRM IF = 3 A µA 3 30 0.98 1.1 0.8 0.95 1.1 1.25 0.9 1.05 V IF = 6 A 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.85 x IF(AV) + 0.033 IF2(RMS) 2/9 Typ STTH602C Characteristics Table 4. Dynamic characteristics Symbol Parameter trr Test conditions Typ Max. Unit IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C 14 20 ns IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C 21 30 Reverse recovery current IF = 3 A, dIF/dt = 200 A/µs, VR = 160 V, Tj = 125 °C 4 5.5 Forward recovery time IF = 3 A, dIF/dt = 200 A/µs VFR = 1.1 x VFmax, Tj = 25 °C 24 ns Forward recovery voltage IF = 3 A, dIF/dt = 200 A/µs, Tj = 25 °C 3.7 V Reverse recovery time IRM tfr VFP Figure 1. Peak current versus duty cycle (per diode) Figure 2. Min. A Forward voltage drop versus forward current (typical values per diode) IM(A) IFM(A) 100 100 T IM δd=tp/T 80 tp 80 60 60 P = 10 W 40 40 Tj=150°C P=5W P=3W Tj=25°C 20 20 VFM(V) δ 0 0 0.0 0.0 Figure 3. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.0 Forward voltage drop versus forward current (maximum values per diode) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (T0-220AB) Zth(j-c)/Rth(j-c) IFM(A) 100 1.0 Single pulse TO-220AB 90 80 70 60 50 Tj=150°C 40 30 Tj=25°C 20 10 VFM(V) tp(s) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1.E-03 1.E-02 1.E-01 1.E+00 3/9 Characteristics Figure 5. STTH602C Relative variation of thermal Figure 6. impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) Junction capacitance versus reverse applied voltage (typical values per diode) C(pF) 1.0 100 Single pulse TO-220FPAB F=1MHz Vosc=30mVRMS Tj=25°C 0.1 10 VR(V) tp(s) 1 0.0 1.E-03 1.E-02 Figure 7. 1.E-01 1.E+00 1 1.E+01 Reverse recovery charges versus dIF/dt (typical values) 10 1000 Reverse recovery time versus dIF/dt (typical values) Figure 8. QRR(nC) 100 tRR(ns) 100 80 IF=3A VR=160V IF=3A VR=160V 70 80 60 Tj=125°C 50 60 40 Tj=125°C 40 30 Tj=25°C 20 20 Tj=25°C 10 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 50 Figure 9. 100 150 200 250 0 300 350 400 450 500 Peak reverse recovery current versus dIF/dt (typical values) 10 100 1000 Figure 10. Dynamic parameters versus junction temperature IRM(A) QRR; IRM [T j] / Q RR; IRM [T j=125°C] 1.4 10 IF=3A VR=160V IF=3A VR=160V 1.2 8 1.0 Tj=125°C 6 IRM 0.8 0.6 4 QRR 0.4 Tj=25°C 2 0.2 Tj(°C) dIF/dt(A/µs) 0.0 0 0 4/9 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125 150 STTH602C 2 Ordering information scheme Ordering information scheme STTH 6 02 Cxx Ultrafast switching diode Average forward current 6=6A Repetitive peak reverse voltage 02 = 200 V Package CT = TO-220AB CFP = TO-220FPAB 5/9 Package information 3 STTH602C Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm Maximum torque value: 1.0 Nm Table 5. TO-220AB Dimensions DIMENSIONS REF. Millimeters Min. A 15.20 a1 C B ØI Typ Max. Inches Min. Typ 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L F A I4 l3 c2 a1 l2 a2 M b1 e c1 M 6/9 2.60 0.102 STTH602C Package information Table 6. TO-220FPAB Dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 A B H Dia L6 L2 L7 L3 L5 F1 L4 D F2 L2 F G1 G 16 Typ. 0.63 Typ. E L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information 4 5 8/9 STTH602C Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH602CT STTH602C TO-220AB 2.23 g 50 Tube STTH602CFP STTH602C TO-220FPAB 2g 50 Tube Revision history Date Revision 05-Apr-2006 1 Description of Changes First issue STTH602C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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