STMICROELECTRONICS STTH6110TV1

STTH6110TV
Ultrafast recovery - high voltage diode
Main product characteristics
IF(AV)
2 x 30 A
VRRM
1000 V
Tj
150° C
VF (typ)
1.3 V
trr (typ)
42 ns
A1
K1
A1
K2
A2
K2
K1
A2
A1
Features and benefits
■
Ultrafast, soft recovery
■
Very low conduction and switching losses
■
High frequency and/or high pulsed current
operation
■
High reverse voltage capability
■
High junction temperature
■
Insulated package
– Electrical insulation = 2500 VRMS
Capacitance = 45 pF
A1
K2
K1
A2
K1
K2
ISOTOP
STTH6110TV1
A2
ISOTOP
STTH6110TV2
Order codes
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
Part Number
Marking
STTH6110TV1
STTH6110TV1
STTH6110TV2
STTH6110TV2
These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment
March 2006
Rev 1
1/8
www.st.com
8
Characteristics
STTH6110TV
1
Characteristics
Table 1.
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
IF(AV)
Average forward current, δ = 0.5
Per diode
IFRM
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
Tstg
Storage temperature range
Tj
Table 2.
Value
Unit
1000
V
60
A
30
A
350
A
240
A
-65 to + 150
°C
150
°C
Tc = 60° C
Maximum operating junction temperature
Thermal parameters
Symbol
Parameter
Value
Rth(j-c)
Junction to case
Rth(c)
Coupling thermal resistance
Per diode
1.4
Total
0.75
Unit
° C/W
0.1
When the diodes are used simultaneously:
∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 3.
Symbol
IR(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
Tj = 25° C
Tj = 125° C
Min.
Typ
Forward voltage drop
Tj = 100° C
µA
10
100
2.0
IF = 30 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.013 IF2(RMS)
2/8
Unit
15
VR = VRRM
Tj = 25° C
VF(2)
Max.
1.4
1.8
1.3
1.7
V
STTH6110TV
Characteristics
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
Unit
100
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
53
70
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25° C
42
55
Reverse recovery current
IF = 30 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
24
32
A
S
Softness factor
IF = 30 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
1
tfr
Forward recovery time
dIF/dt = 100 A/µs
IF = 30 A
VFR = 1.5 x VFmax, Tj = 25° C
450
ns
Forward recovery voltage
IF = 30 A, dIF/dt = 100 A/µs,
Tj = 25° C
Reverse recovery time
trr
IRM
VFP
Figure 1.
Conduction losses versus
average current
Figure 2.
P(W)
200
70
=0.05
=0.1
=1
=0.5
=0.2
5
IFM(A)
Tj=150°C
(Maximum values)
160
50
140
40
120
Tj=150°C
(Typical values)
100
30
80
Tj=25°C
(Maximum values)
60
20
T
40
10
20
IF(AV)(A)
0
0
5
Figure 3.
10
15
20
25
30
35
40
Relative variation of thermal
impedance junction to case
versus pulse duration
VFM(V)
0
0.0
0.5
Figure 4.
1.0
1.5
2.0
2.5
3.0
3.5
Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
Zth(j-c)/Rth(j-c)
60
1.0
0.9
V
Forward voltage drop versus
forward current
180
60
ns
VR=600V
Tj=125°C
Single pulse
50
0.8
IF= 2 x IF(AV)
IF= IF(AV)
0.7
40
0.6
IF=0.5 x IF(AV)
30
0.5
0.4
20
0.3
0.2
10
0.1
0.0
1.E-03
dIF/dt(A/µs)
tp(s)
1.E-02
1.E-01
0
1.E+00
1.E+01
0
50
100
150
200
250
300
350
400
450
500
3/8
Characteristics
Figure 5.
STTH6110TV
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
trr(ns)
Reverse recovery charges versus
dIF/dt (typical values)
Qrr(µC)
8
700
VR=600V
Tj=125°C
600
VR=600V
Tj=125°C
7
IF= 2 x IF(AV)
IF= 2 x IF(AV)
6
500
5
IF= IF(AV)
400
IF= IF(AV )
4
300
3
200
IF=0.5 x IF(AV)
2
100
1
IF=0.5 x IF(AV)
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
Figure 7.
100
150
200
250
300
350
400
450
500
Softness factor versus
dIF/dt (typical values)
0
50
Figure 8.
100
150
200
250
300
350
400
450
500
Relative variations of dynamic
parameters versus junction
temperature
S factor
1.50
2.0
IF = 2 x IF(AV)
VR=600V
Tj=125°C
1.8
IF = IF(AV)
VR=600V
Reference: Tj=125°C
Sfactor
1.6
1.25
1.4
1.2
1.0
1.00
0.8
IRM
0.6
0.75
0.4
0.2
dIF/dt(A/µs)
0.50
0
4/8
50
100
150
200
250
300
350
400
450
500
0.0
25
tRR
QRR
50
Tj(°C)
75
100
125
STTH6110TV
Figure 9.
Characteristics
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus
dIF/dt (typical values)
VFP(V)
1100
25
IF = IF(AV)
Tj=125°C
tfr(ns)
IF = IF(AV)
VFR = 1.5 x V F max.
Tj=125°C
1000
20
900
800
15
700
600
10
500
400
5
300
dIF/dt(A/µs)
dIF/dt(A/µs)
200
0
0
100
200
300
400
500
0
100
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
Vosc=30mVRMS
Tj=25°C
100
VR(V)
10
1
10
100
1000
5/8
Package information
2
STTH6110TV
Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Table 5.
ISOTOP dimensions
DIMENSIONS
REF.
Millimeters
Inches
E
Min.
Max
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
E2
C
0.75
0.85
0.030
0.033
F
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
G2
A
C
A1
C2
F1
P1
D
G
S
D1
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
G1
F1
4.60
5.00
0.181
0.197
E1
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
B
ØP
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
6/8
STTH6110TV
3
4
Ordering information
Ordering information
Part Number
Marking
Package
Weight
Base qty
Delivery mode
STTH6110TV1
STTH6110TV1
ISOTOP
27 g
10
Tube
STTH6110TV2
STTH6110TV2
ISOTOP
27 g
10
Tube
Revision history
Date
Revision
22-Feb-2006
1
Description of Changes
First issue.
7/8
STTH6110TV
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